MSAFX76N07A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MSAFX76N07A

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 300 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 70 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 76 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 70 nS

Cossⓘ - Capacitancia de salida: 2000 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm

Encapsulados: COOLPACK2

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MSAFX76N07A datasheet

 ..1. Size:33K  microsemi
 msafx76n07a.pdf pdf_icon

MSAFX76N07A

2830 S. Fairview St. Santa Ana, CA 92704 PH (714) 979-8220 FAX (714) 966-5256 MSAFX76N07A Features 70 Volts Ultrafast body diode 76 Amps Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability 12 m Hermetically sealed, surface mount power package Low package inductance Very low thermal resistance N-CHANNEL

 8.1. Size:34K  microsemi
 msafx75n10a.pdf pdf_icon

MSAFX76N07A

2830 S. Fairview St. Santa Ana, CA 92704 PH (714) 979-8220 FAX (714) 966-5256 MSAFX75N10A Features 100 Volts Ultrafast body diode 75 Amps Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability 20 m Hermetically sealed, surface mount power package Low package inductance Very low thermal resistance N-CHANNEL

 9.1. Size:37K  microsemi
 10n90a msafx10n90a.pdf pdf_icon

MSAFX76N07A

2830 S. Fairview St. Santa Ana, CA 92704 PH (714) 979-8220 FAX (714) 966-5256 MSAFX10N90A Features 900 Volts Ultrafast body diode 10 Amps Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability 1.1 Hermetically sealed, surface mount power package Low package inductance Very low thermal resistance N-CHANNEL Rev

 9.2. Size:34K  microsemi
 20n60a msafx20n60a.pdf pdf_icon

MSAFX76N07A

2830 S. Fairview St. Santa Ana, CA 92704 PH (714) 979-8220 FAX (714) 966-5256 MSAFX20N60A Features 600 Volts Ultrafast body diode 20 Amps Rugged polysilicon gate cell structure 350 m Increased Unclamped Inductive Switching (UIS) capability Hermetically sealed, surface mount power package Low package inductance N-CHANNEL Very low thermal resistance

MOSTRAR MÁS

Otros transistores... 6N80A, 6N80AF, 6N90A, 6N90AF, 75N08, 75N10A, 75N10B, MSAFA75N10C, AO3400A, 7N60AF, 7N60H, 7N90A, 7N90AF, 8N60H, 8N80A, 8N80AF, 8N80B