AMCC921PE MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AMCC921PE

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 163 nS

Cossⓘ - Capacitancia de salida: 90 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.028 Ohm

Encapsulados: DFN3X3-8L

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AMCC921PE datasheet

 ..1. Size:301K  analog power
 amcc921pe.pdf pdf_icon

AMCC921PE

Analog Power AMCC921PE Dual P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 28 @ VGS = -4.5V -6.0 Low thermal impedance -20 45 @ VGS = -2.5V -4.8 Fast switching speed 78 @ VGS = -1.8V -5.5 Typical Applications DFN3x3-8L White LED boost converters Automotive Systems Industrial DC/

 8.1. Size:299K  analog power
 amcc920ne.pdf pdf_icon

AMCC921PE

Analog Power AMCC920NE N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 20 @ VGS = 4.5V 7.1 Low thermal impedance 20 24 @ VGS = 2.5V 6.5 Fast switching speed 39 @ VGS = 1.8V 5.1 Typical Applications DFN3x3-8L White LED boost converters Automotive Systems Industrial DC/DC Conv

 8.2. Size:218K  analog power
 amcc922ne.pdf pdf_icon

AMCC921PE

Analog Power AMCC922NE N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 21 @ VGS = 4.5V 8.2 Low thermal impedance 20 24 @ VGS = 2.5V 7.5 Fast switching speed Typical Applications DFN3x3-8L White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLU

 8.3. Size:89K  analog power
 amcc924ne.pdf pdf_icon

AMCC921PE

Analog Power AMCC924NE Dual N-Channel Logical Level MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) (OHM) ID (A) dissipation. Typical applications are DC-DC 0.012 @ VGS = 4.5 V 9.2 converters and power management in portable and 20 battery-powere

MOSTRAR MÁS

Otros transistores... AMA922N, AMA930N, AMA931PE, AMA960N, AMB430N, AMCC431P, AMCC530C, AMCC920NE, IRFP260N, AMCC922NE, AMCC924NE, AMD510C, AMD530C, AMD531C, AMD532C, AMD533CE, AMD534C