AMCC921PE MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AMCC921PE
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 163 nS
   Cossⓘ - Capacitancia de salida: 90 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.028 Ohm
   Paquete / Cubierta: DFN3X3-8L

Búsqueda de reemplazo de MOSFET AMCC921PE

AMCC921PE Datasheet (PDF)

..1. Size:301K analog power
amcc921pe.pdf

Analog Power AMCC921PEDual P-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)28 @ VGS = -4.5V -6.0 Low thermal impedance -20 45 @ VGS = -2.5V -4.8 Fast switching speed 78 @ VGS = -1.8V -5.5Typical Applications: DFN3x3-8L White LED boost converters Automotive Systems Industrial DC/

8.1. Size:299K analog power
amcc920ne.pdf

Analog Power AMCC920NEN-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)20 @ VGS = 4.5V7.1 Low thermal impedance 20 24 @ VGS = 2.5V6.5 Fast switching speed 39 @ VGS = 1.8V5.1Typical Applications: DFN3x3-8L White LED boost converters Automotive Systems Industrial DC/DC Conv

8.2. Size:218K analog power
amcc922ne.pdf

Analog Power AMCC922NEN-Channel 20-V (D-S) MOSFETPRODUCT SUMMARY Key Features:rDS(on) (m) VDS (V) ID(A) Low r trench technologyDS(on)21 @ VGS = 4.5V8.2 Low thermal impedance2024 @ VGS = 2.5V7.5 Fast switching speedTypical Applications:DFN3x3-8L White LED boost converters Automotive Systems Industrial DC/DC Conversion CircuitsABSOLU

8.3. Size:89K analog power
amcc924ne.pdf

Analog Power AMCC924NEDual N-Channel Logical Level MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) (OHM) ID (A)dissipation. Typical applications are DC-DC 0.012 @ VGS = 4.5 V 9.2converters and power management in portable and 20battery-powere

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