AMCC922NE MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AMCC922NE
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 1.5 W
Voltaje máximo drenador - fuente |Vds|: 20 V
Voltaje máximo fuente - puerta |Vgs|: 8 V
Corriente continua de drenaje |Id|: 8.2 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 0.4 V
Carga de la puerta (Qg): 11 nC
Tiempo de subida (tr): 87 nS
Conductancia de drenaje-sustrato (Cd): 88 pF
Resistencia entre drenaje y fuente RDS(on): 0.021 Ohm
Paquete / Cubierta: DFN3X3-8L
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AMCC922NE Datasheet (PDF)
amcc922ne.pdf
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amcc924ne.pdf
Analog Power AMCC924NEDual N-Channel Logical Level MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) (OHM) ID (A)dissipation. Typical applications are DC-DC 0.012 @ VGS = 4.5 V 9.2converters and power management in portable and 20battery-powere
amcc921pe.pdf
Analog Power AMCC921PEDual P-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)28 @ VGS = -4.5V -6.0 Low thermal impedance -20 45 @ VGS = -2.5V -4.8 Fast switching speed 78 @ VGS = -1.8V -5.5Typical Applications: DFN3x3-8L White LED boost converters Automotive Systems Industrial DC/
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
