AMD534C MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AMD534C

Tipo de FET: MOSFET

Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 50 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 36 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 4 nS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.029 Ohm

Encapsulados: TO-252

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AMD534C datasheet

 ..1. Size:79K  analog power
 amd534c.pdf pdf_icon

AMD534C

Analog Power AMD534C P & N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m ) ID (A) ( rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 39 @ V = 4.5V 30 GS 30 converters and power management in portable and 29 @ V = 10V 36 G

 0.1. Size:183K  analog power
 amd534ce.pdf pdf_icon

AMD534C

Analog Power AMD534CE P & N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( )ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 45 @ V = 4.5V 29 GS 30 converters and power management in portable and 35 @ V = 10V 36 GS

 9.1. Size:140K  analog power
 amd532c.pdf pdf_icon

AMD534C

Analog Power AMD532C P & N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( )ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 95 @ V = 2.5V 20 GS 30 converters and power management in portable and 59 @ V = 4.5V 24 GS

 9.2. Size:234K  analog power
 amd533ce.pdf pdf_icon

AMD534C

Analog Power AMD533CE P & N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( )ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 45 @ V = 4.5V 29 GS 30 converters and power management in portable and 35 @ V = 10V 36 GS

MOSTRAR MÁS

Otros transistores... AMCC921PE, AMCC922NE, AMCC924NE, AMD510C, AMD530C, AMD531C, AMD532C, AMD533CE, P55NF06, AMD534CE, AMD540CE, AMF920NE, AMF922NE, AMF924NE, AMR430N, AMR432N, AMR434N