AMR490N MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AMR490N

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 150 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 4.8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 7 nS

Cossⓘ - Capacitancia de salida: 98 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.15 Ohm

Encapsulados: DFN5X6-8L

 Búsqueda de reemplazo de AMR490N MOSFET

- Selecciónⓘ de transistores por parámetros

 

AMR490N datasheet

 ..1. Size:315K  analog power
amr490n.pdf pdf_icon

AMR490N

Analog Power AMR490N N-Channel 150-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 150 @ VGS = 10V 4.8 Low thermal impedance 150 170 @ VGS = 4.5V 4.5 Fast switching speed Typical Applications DFN5X6-8L PoE PSE and PD Circuits LED Inverter Circuits 48V-Input DC/DC Conversion Circuits AB

 9.1. Size:317K  analog power
amr494n.pdf pdf_icon

AMR490N

Analog Power AMR494N N-Channel 150-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 160 @ VGS = 10V 4.6 Low thermal impedance 150 180 @ VGS = 5.5V 4.4 Fast switching speed Typical Applications DFN5X6-8L PoE PSE and PD Circuits LED Inverter Circuits 48V-Input DC/DC Conversion Circuits AB

 9.2. Size:315K  analog power
amr492n.pdf pdf_icon

AMR490N

Analog Power AMR492N N-Channel 150-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 140 @ VGS = 10V 4.9 Low thermal impedance 150 160 @ VGS = 4.5V 4.6 Fast switching speed Typical Applications DFN5X6-8L PoE PSE and PD Circuits LED Inverter Circuits 48V-Input DC/DC Conversion Circuits AB

 9.3. Size:315K  analog power
amr496n.pdf pdf_icon

AMR490N

Analog Power AMR496N N-Channel 150-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 65 @ VGS = 10V 7.2 Low thermal impedance 150 75 @ VGS = 5.5V 6.7 Fast switching speed Typical Applications DFN5X6-8L PoE PSE and PD Circuits LED Inverter Circuits 48V-Input DC/DC Conversion Circuits ABSOLU

Otros transistores... AMD540CE, AMF920NE, AMF922NE, AMF924NE, AMR430N, AMR432N, AMR434N, AMR460N, IRF9540N, AMR492N, AMR494N, AMR496N, AMR860N, AMR930N, AMS930N, APF7619WS, APL1001J