AUIRF3315S MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AUIRF3315S

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 94 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 150 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 21 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 32 nS

Cossⓘ - Capacitancia de salida: 300 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.082 Ohm

Encapsulados: D2PAK

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AUIRF3315S datasheet

 ..1. Size:314K  international rectifier
 auirf3315s.pdf pdf_icon

AUIRF3315S

PD - 97733 AUTOMOTIVE GRADE AUIRF3315S Features HEXFET Power MOSFET l Advanced Planar Technology D l Low On-Resistance VDSS 150V l Dynamic dV/dT Rating l 175 C Operating Temperature RDS(on) max. 82m G l Fast Switching ID 21A l Fully Avalanche Rated S l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified * D Description S

 7.1. Size:1364K  infineon
 auirf3305.pdf pdf_icon

AUIRF3315S

AUTOMOTIVE GRADE AUIRF3305 Features HEXFET Power MOSFET Advanced Planar Technology Low On-Resistance V(BR)DSS 55V 175 C Operating Temperature Fast Switching RDS(on) max. 8.0m Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax ID 140A Lead-Free, RoHS Compliant Automotive Qualified * Description Specifically de

 8.1. Size:236K  international rectifier
 auirf3415.pdf pdf_icon

AUIRF3315S

PD - 97625 AUTOMOTIVE GRADE AUIRF3415 Features HEXFET Power MOSFET l Advanced Planar Technology l Low On-Resistance D V(BR)DSS 150V l Dynamic dv/dt Rating l 175 C Operating Temperature RDS(on) max. 0.042 l Fast Switching G l Fully Avalanche Rated ID 43A S l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant D l Automotive Qualified* S Descriptio

 8.2. Size:330K  international rectifier
 auirf3205zstrl.pdf pdf_icon

AUIRF3315S

PD - 97542 AUTOMOTIVE GRADE AUIRF3205Z AUIRF3205ZS Features Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance 175 C Operating Temperature D V(BR)DSS 55V Fast Switching RDS(on) max. 6.5m Repetitive Avalanche Allowed up to Tjmax G ID (Silicon Limited) 110A Lead-Free, RoHS Compliant S Automotive Qualified * ID (Package Li

MOSTRAR MÁS

Otros transistores... AUIRF1324STRL, AUIRF1404ZSTRL, AUIRF1405ZS-7P, AUIRF1405ZSTRL, AUIRF2804STRR, AUIRF2804WL, AUIRF2907ZS7PTL, AUIRF3205ZSTRL, 4N60, AUIRF3710ZSTRL, AUIRF3805STRL, AUIRF4104STRL, AUIRF540ZSTRL, AUIRF6215S, AUIRF6218L, AUIRF6218S, AUIRF7313Q