AUIRF540ZSTRL MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AUIRF540ZSTRL

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 92 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 36 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 51 nS

Cossⓘ - Capacitancia de salida: 180 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0265 Ohm

Encapsulados: D2PAK

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AUIRF540ZSTRL datasheet

 ..1. Size:326K  international rectifier
 auirf540zstrl.pdf pdf_icon

AUIRF540ZSTRL

PD - 96326 AUTOMOTIVE GRADE AUIRF540Z AUIRF540ZS Features HEXFET Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance V(BR)DSS 100V l 175 C Operating Temperature RDS(on) typ. 21m l Fast Switching l Repetitive Avalanche Allowed up to Tjmax G max. 26.5m l Lead-Free, RoHS Compliant ID 36A l Automotive Qualified * S Description Specifically designe

 4.1. Size:702K  infineon
 auirf540z auirf540zs.pdf pdf_icon

AUIRF540ZSTRL

AUIRF540Z AUTOMOTIVE GRADE AUIRF540ZS Features HEXFET Power MOSFET Advanced Process Technology VDSS 100V Ultra Low On-Resistance RDS(on) typ. 175 C Operating Temperature 21m Fast Switching max. 26.5m Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant ID 36A Automotive Qualified * Description D

 8.1. Size:236K  international rectifier
 auirf5210s.pdf pdf_icon

AUIRF540ZSTRL

AUTOMOTIVE GRADE AUIRF5210S Features HEXFET Power MOSFET l Advanced Planar Technology l P-Channel MOSFET D V(BR)DSS -100V l Low On-Resistance l Dynamic dV/dT Rating RDS(on) max. 60m G l 175 C Operating Temperature S ID -38A l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax D l Lead-Free, RoHS Compliant l Automotive Qualified * Desc

 8.2. Size:295K  infineon
 auirf5210s.pdf pdf_icon

AUIRF540ZSTRL

AUTOMOTIVE GRADE AUIRF5210S Features Advanced Process Technology VDSS -100V P-Channel MOSFET Ultra Low On-Resistance RDS(on) max. 60m Dynamic dv/dt Rating Fast Switching ID -38A Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax D Lead-Free, RoHS Compliant Automotive Qualified * S G Description Specifical

MOSTRAR MÁS

Otros transistores... AUIRF2804STRR, AUIRF2804WL, AUIRF2907ZS7PTL, AUIRF3205ZSTRL, AUIRF3315S, AUIRF3710ZSTRL, AUIRF3805STRL, AUIRF4104STRL, 10N65, AUIRF6215S, AUIRF6218L, AUIRF6218S, AUIRF7313Q, AUIRF7484Q, AUIRF7640S2TR, AUIRF7647S2TR1, AUIRF7648M2TR1