AUIRF7647S2TR1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AUIRF7647S2TR1
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 5.9 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   Qgⓘ - Carga de la puerta: 14 nC
   trⓘ - Tiempo de subida: 8.4 nS
   Cossⓘ - Capacitancia de salida: 190 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.031 Ohm
   Paquete / Cubierta: DIRECTFET

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AUIRF7647S2TR1 Datasheet (PDF)

..1. Size:218K international rectifier
auirf7647s2tr1.pdf

PD - 97537AAUIRF7647S2TRAUTOMOTIVE GRADEAUIRF7647S2TR1DirectFET Power MOSFET Advanced Process TechnologyV(BR)DSS100V Optimized for Class D Audio Amplifier Applications Low Rds(on) for Improved EfficiencyRDS(on) typ.26m Low Qg for Better THD and Improved Efficiencymax. 31m Low Qrr for Better THD and Lower EMIRG (typical)1.6 Low Par

1.1. Size:429K infineon
auirf7647s2tr.pdf

AUTOMOTIVE GRADE AUIRF7647S2TR Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 100V Optimized for Class D Audio Amplifier Applications Low Rds(on) for Improved Efficiency RDS(on) typ. 26m Low Qg for Better THD and Improved Efficiency max. 31m Low Qrr for Better THD and Lower EMI RG (typical) 1.6 Low Parasiti

6.1. Size:288K international rectifier
auirf7648m2tr1.pdf

PD - 96317BAUIRF7648M2TRAUTOMOTIVE GRADEAUIRF7648M2TR1 Automotive DirectFET Power MOSFET V(BR)DSS60V Advanced Process Technology Optimized for Automotive Motor Drive, DC-DC andRDS(on) typ.5.5mother Heavy Load Applicationsmax. 7.0m Exceptionally Small Footprint and Low Profile High Power DensityID (Silicon Limited)68A Low Parasitic Para

6.2. Size:303K international rectifier
auirf7640s2tr.pdf

PD -97551AUIRF7640S2TRAUTOMOTIVE GRADEAUIRF7640S2TR1DirectFET Power MOSFET Advanced Process Technology Optimized for Class D Audio Amplifier and High SpeedV(BR)DSS60VSwitching ApplicationsRDS(on) typ.27m Low Rds(on) for Improved Efficiencymax. 36m Low Qg for Better THD and Improved Efficiency Low Qrr for Better THD and Lower EMI RG (typical)

6.3. Size:432K infineon
auirf7648m2tr.pdf

AUTOMOTIVE GRADE AUIRF7648M2TR Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 60V Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications RDS(on) typ. 5.5m Exceptionally Small Footprint and Low Profile max. 7.0m High Power Density ID (Silicon Limited) 68A Low Parasitic Parameters Qg (typic

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