AUIRF7647S2TR1 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AUIRF7647S2TR1
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.5 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 5.9 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 8.4 nS
Cossⓘ - Capacitancia de salida: 190 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.031 Ohm
Encapsulados: DIRECTFET
Búsqueda de reemplazo de AUIRF7647S2TR1 MOSFET
- Selecciónⓘ de transistores por parámetros
AUIRF7647S2TR1 datasheet
auirf7647s2tr1.pdf
PD - 97537A AUIRF7647S2TR AUTOMOTIVE GRADE AUIRF7647S2TR1 DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 100V Optimized for Class D Audio Amplifier Applications Low Rds(on) for Improved Efficiency RDS(on) typ. 26m Low Qg for Better THD and Improved Efficiency max. 31m Low Qrr for Better THD and Lower EMI RG (typical) 1.6 Low Par
auirf7647s2tr.pdf
AUTOMOTIVE GRADE AUIRF7647S2TR Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 100V Optimized for Class D Audio Amplifier Applications Low Rds(on) for Improved Efficiency RDS(on) typ. 26m Low Qg for Better THD and Improved Efficiency max. 31m Low Qrr for Better THD and Lower EMI RG (typical) 1.6 Low Parasiti
auirf7648m2tr1.pdf
PD - 96317B AUIRF7648M2TR AUTOMOTIVE GRADE AUIRF7648M2TR1 Automotive DirectFET Power MOSFET V(BR)DSS 60V Advanced Process Technology Optimized for Automotive Motor Drive, DC-DC and RDS(on) typ. 5.5m other Heavy Load Applications max. 7.0m Exceptionally Small Footprint and Low Profile High Power Density ID (Silicon Limited) 68A Low Parasitic Para
auirf7640s2tr.pdf
PD -97551 AUIRF7640S2TR AUTOMOTIVE GRADE AUIRF7640S2TR1 DirectFET Power MOSFET Advanced Process Technology Optimized for Class D Audio Amplifier and High Speed V(BR)DSS 60V Switching Applications RDS(on) typ. 27m Low Rds(on) for Improved Efficiency max. 36m Low Qg for Better THD and Improved Efficiency Low Qrr for Better THD and Lower EMI RG (typical)
Otros transistores... AUIRF4104STRL, AUIRF540ZSTRL, AUIRF6215S, AUIRF6218L, AUIRF6218S, AUIRF7313Q, AUIRF7484Q, AUIRF7640S2TR, IRF520, AUIRF7648M2TR1, AUIRF7665S2TR, AUIRF7669L2TR1, AUIRF7675M2TR, AUIRF7732S2TR, AUIRF7734M2, AUIRF7736M2TR1, AUIRF7737L2TR1
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