AUIRFB8405 Todos los transistores

 

AUIRFB8405 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AUIRFB8405
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 163 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 120 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 128 nS
   Cossⓘ - Capacitancia de salida: 754 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0025 Ohm
   Paquete / Cubierta: TO-220AB
 

 Búsqueda de reemplazo de AUIRFB8405 MOSFET

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Principales características: AUIRFB8405

 ..1. Size:222K  international rectifier
 auirfb8405.pdf pdf_icon

AUIRFB8405

AUTOMOTIVE GRADE AUIRFB8405 Features HEXFET Power MOSFET Advanced Process Technology D New Ultra Low On-Resistance VDSS 40V 175 C Operating Temperature RDS(on) typ.2.1m Fast Switching Repetitive Avalanche Allowed up to Tjmax max. 2.5m Lead-Free, RoHS Compliant G ID (Silicon Limited) 185A Automotive Qualified * ID (Package Limited) 120A S

 5.1. Size:398K  international rectifier
 auirfb8409 auirfs8409 auirfsl8409.pdf pdf_icon

AUIRFB8405

AUIRFB8409 AUTOMOTIVE GRADE AUIRFS8409 AUIRFSL8409 Features HEXFET Power MOSFET l Advanced Process Technology D l New Ultra Low On-Resistance VDSS 40V l 175 C Operating Temperature RDS(on) (SMD) typ. 0.97m l Fast Switching max. 1.2m l Repetitive Avalanche Allowed up to Tjmax G l Lead-Free, RoHS Compliant ID (Silicon Limited) 409A l Automotive Qualified * ID (Package Li

 5.2. Size:340K  international rectifier
 auirfb8407 auirfs8407 auirfsl8407.pdf pdf_icon

AUIRFB8405

AUIRFB8407 AUTOMOTIVE GRADE AUIRFS8407 AUIRFSL8407 Features HEXFET Power MOSFET l Advanced Process Technology l New Ultra Low On-Resistance VDSS 40V D l 175 C Operating Temperature RDS(on) typ. 1.4m l Fast Switching l Repetitive Avalanche Allowed up to Tjmax (SMD version) max. 1.8m l Lead-Free, RoHS Compliant G 250A ID (Silicon Limited) Automotive Qualified * S

 8.1. Size:278K  international rectifier
 auirfb4410.pdf pdf_icon

AUIRFB8405

PD - 97598 AUTOMOTIVE GRADE AUIRFB4410 HEXFET Power MOSFET Features Advanced Process Technology D VDSS 100V Ultra Low On-Resistance Dynamic dV/dT Rating RDS(on) typ. 8.0m 175 C Operating Temperature max. 10m Fast Switching G Repetitive Avalanche Allowed up to ID (Silicon Limited) 88A Tjmax Lead-Free, RoHS Compliant ID (Package Limited)

MOSTRAR MÁS

Otros transistores... AUIRF7737L2TR1 , AUIRF7738L2TR , AUIRF7739L2TR , AUIRF7759L2 , AUIRF7769L2 , AUIRF7799L2 , AUIRF8736M2 , AUIRF8739L2 , IRLB3034 , AUIRFB8407 , AUIRFB8409 , AUIRFBA1405 , AUIRFI4905 , AUIRFN7107 , AUIRFN8401 , AUIRFN8403 , AUIRFN8405 .

 

 
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