AUIRFB8409 Todos los transistores

 

AUIRFB8409 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AUIRFB8409
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 375 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 195 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 105 nS
   Cossⓘ - Capacitancia de salida: 2130 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0013 Ohm
   Paquete / Cubierta: TO-220AB
     - Selección de transistores por parámetros

 

AUIRFB8409 Datasheet (PDF)

 ..1. Size:398K  international rectifier
auirfb8409 auirfs8409 auirfsl8409.pdf pdf_icon

AUIRFB8409

AUIRFB8409AUTOMOTIVE GRADE AUIRFS8409AUIRFSL8409FeaturesHEXFET Power MOSFETl Advanced Process TechnologyDl New Ultra Low On-Resistance VDSS 40Vl 175C Operating TemperatureRDS(on) (SMD) typ. 0.97ml Fast Switching max. 1.2ml Repetitive Avalanche Allowed up to TjmaxGl Lead-Free, RoHS Compliant ID (Silicon Limited) 409Al Automotive Qualified *ID (Package Li

 5.1. Size:222K  international rectifier
auirfb8405.pdf pdf_icon

AUIRFB8409

AUTOMOTIVE GRADEAUIRFB8405FeaturesHEXFET Power MOSFET Advanced Process TechnologyD New Ultra Low On-ResistanceVDSS 40V 175C Operating TemperatureRDS(on) typ.2.1m Fast Switching Repetitive Avalanche Allowed up to Tjmax max. 2.5m Lead-Free, RoHS Compliant GID (Silicon Limited) 185A Automotive Qualified *ID (Package Limited) 120A S

 5.2. Size:340K  international rectifier
auirfb8407 auirfs8407 auirfsl8407.pdf pdf_icon

AUIRFB8409

AUIRFB8407AUTOMOTIVE GRADEAUIRFS8407AUIRFSL8407FeaturesHEXFET Power MOSFETl Advanced Process Technologyl New Ultra Low On-ResistanceVDSS 40VDl 175C Operating TemperatureRDS(on) typ. 1.4ml Fast Switching l Repetitive Avalanche Allowed up to Tjmax(SMD version) max. 1.8m l Lead-Free, RoHS CompliantG250AID (Silicon Limited) Automotive Qualified *S

 8.1. Size:278K  international rectifier
auirfb4410.pdf pdf_icon

AUIRFB8409

PD - 97598AUTOMOTIVE GRADEAUIRFB4410HEXFET Power MOSFETFeatures Advanced Process TechnologyDVDSS100V Ultra Low On-Resistance Dynamic dV/dT RatingRDS(on) typ.8.0m 175C Operating Temperature max. 10m Fast SwitchingG Repetitive Avalanche Allowed up toID (Silicon Limited)88ATjmax Lead-Free, RoHS CompliantID (Package Limited)

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: CS15N70F | IRFZ24L | NTD3055-094-1G | 2SK1601

 

 
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