AUIRFB8409 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AUIRFB8409

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 375 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 195 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 105 nS

Cossⓘ - Capacitancia de salida: 2130 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0013 Ohm

Encapsulados: TO-220AB

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AUIRFB8409 datasheet

 ..1. Size:398K  international rectifier
 auirfb8409 auirfs8409 auirfsl8409.pdf pdf_icon

AUIRFB8409

AUIRFB8409 AUTOMOTIVE GRADE AUIRFS8409 AUIRFSL8409 Features HEXFET Power MOSFET l Advanced Process Technology D l New Ultra Low On-Resistance VDSS 40V l 175 C Operating Temperature RDS(on) (SMD) typ. 0.97m l Fast Switching max. 1.2m l Repetitive Avalanche Allowed up to Tjmax G l Lead-Free, RoHS Compliant ID (Silicon Limited) 409A l Automotive Qualified * ID (Package Li

 5.1. Size:222K  international rectifier
 auirfb8405.pdf pdf_icon

AUIRFB8409

AUTOMOTIVE GRADE AUIRFB8405 Features HEXFET Power MOSFET Advanced Process Technology D New Ultra Low On-Resistance VDSS 40V 175 C Operating Temperature RDS(on) typ.2.1m Fast Switching Repetitive Avalanche Allowed up to Tjmax max. 2.5m Lead-Free, RoHS Compliant G ID (Silicon Limited) 185A Automotive Qualified * ID (Package Limited) 120A S

 5.2. Size:340K  international rectifier
 auirfb8407 auirfs8407 auirfsl8407.pdf pdf_icon

AUIRFB8409

AUIRFB8407 AUTOMOTIVE GRADE AUIRFS8407 AUIRFSL8407 Features HEXFET Power MOSFET l Advanced Process Technology l New Ultra Low On-Resistance VDSS 40V D l 175 C Operating Temperature RDS(on) typ. 1.4m l Fast Switching l Repetitive Avalanche Allowed up to Tjmax (SMD version) max. 1.8m l Lead-Free, RoHS Compliant G 250A ID (Silicon Limited) Automotive Qualified * S

 8.1. Size:278K  international rectifier
 auirfb4410.pdf pdf_icon

AUIRFB8409

PD - 97598 AUTOMOTIVE GRADE AUIRFB4410 HEXFET Power MOSFET Features Advanced Process Technology D VDSS 100V Ultra Low On-Resistance Dynamic dV/dT Rating RDS(on) typ. 8.0m 175 C Operating Temperature max. 10m Fast Switching G Repetitive Avalanche Allowed up to ID (Silicon Limited) 88A Tjmax Lead-Free, RoHS Compliant ID (Package Limited)

MOSTRAR MÁS

Otros transistores... AUIRF7739L2TR, AUIRF7759L2, AUIRF7769L2, AUIRF7799L2, AUIRF8736M2, AUIRF8739L2, AUIRFB8405, AUIRFB8407, IRFB7545, AUIRFBA1405, AUIRFI4905, AUIRFN7107, AUIRFN8401, AUIRFN8403, AUIRFN8405, AUIRFN8458, AUIRFN8459