AUIRFN8458 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AUIRFN8458
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 34 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 43 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3.9 V
   Qgⓘ - Carga de la puerta: 22 nC
   trⓘ - Tiempo de subida: 71 nS
   Cossⓘ - Capacitancia de salida: 170 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm
   Paquete / Cubierta: PQFN

Búsqueda de reemplazo de MOSFET AUIRFN8458

AUIRFN8458 Datasheet (PDF)

..1. Size:735K international rectifier
auirfn8458.pdf

AUTOMOTIVE GRADE AUIRFN8458 Features VDSS 40V Advanced Process Technology Dual N-Channel MOSFETRDS(on) typ. 8.0m Ultra Low On-Resistance max10m 175C Operating Temperature Fast SwitchingID Repetitive Avalanche Allowed up to Tjmax 43A (@TC (Bottom) = 25C Lead-Free, RoHS Compliant Automotive Qualified * Description Spe

..2. Size:735K infineon
auirfn8458.pdf

5.1. Size:741K international rectifier
auirfn8459.pdf

AUTOMOTIVE GRADE AUIRFN8459 Features VDSS 40V Advanced Process Technology RDS(on) typ. 4.8m Dual N-Channel MOSFET Ultra Low On-Resistance 5.9mmax 175C Operating Temperature ID (Silicon Limited) 70A Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 50A Lead-Free, RoHS Compliant Automot

5.2. Size:534K infineon
auirfn8459.pdf

AUTOMOTIVE GRADE AUIRFN8459 Features VDSS 40V Advanced Process Technology RDS(on) typ. 4.8m Dual N-Channel MOSFET Ultra Low On-Resistance 5.9m max 175C Operating Temperature ID (Silicon Limited) 70A Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 50A Lead-Free, RoHS Compliant Automotive

6.1. Size:561K 1
auirfn8405tr.pdf

AUTOMOTIVE GRADE AUIRFN8405 Features HEXFET POWER MOSFET Advanced Process Technology Ultra Low On-Resistance VDSS 40V 175C Operating Temperature RDS(on) typ. 1.6m Fast Switching Repetitive Avalanche Allowed up to Tjmax max 2.0m Lead-Free, RoHS Compliant ID (Silicon Limited) 187A Automotive Qualified *

6.2. Size:609K international rectifier
auirfn8401.pdf

AUTOMOTIVE GRADE AUIRFN8401 Features HEXFET POWER MOSFET Advanced Process Technology Ultra Low On-Resistance VDSS 40V 175C Operating Temperature RDS(on) typ. 3.6m Fast Switching Repetitive Avalanche Allowed up to Tjmax max 4.6m Lead-Free, RoHS Compliant ID (Silicon Limited) 84A Automotive Qualified * De

6.3. Size:576K international rectifier
auirfn8405.pdf

6.4. Size:606K international rectifier
auirfn8403.pdf

AUTOMOTIVE GRADE AUIRFN8403 Features HEXFET POWER MOSFET Advanced Process Technology Ultra Low On-Resistance VDSS 40V 175C Operating Temperature RDS(on) typ. 2.5m Fast Switching Repetitive Avalanche Allowed up to Tjmax max 3.3m Lead-Free, RoHS Compliant ID (Silicon Limited) 123A Automotive Qualified *

6.5. Size:611K infineon
auirfn8401.pdf