AUIRFR2607ZTR MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AUIRFR2607ZTR

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 110 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 75 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 42 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 59 nS

Cossⓘ - Capacitancia de salida: 190 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.022 Ohm

Encapsulados: TO-252

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AUIRFR2607ZTR datasheet

 ..1. Size:282K  international rectifier
 auirfr2607ztr.pdf pdf_icon

AUIRFR2607ZTR

PD - 96323 AUTOMOTIVE MOSFET AUIRFR2607Z HEXFET Power MOSFET Features V(BR)DSS 75V D l Advanced Process Technology RDS(on) typ. l Ultra Low On-Resistance 17.6m l 175 C Operating Temperature max. 22m l Fast Switching G l Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 45A S l Lead-Free, RoHS Compliant ID (Package Limited) 42A l Automotive Qualified *

 3.1. Size:671K  infineon
 auirfr2607z.pdf pdf_icon

AUIRFR2607ZTR

AUTOMOTIVE GRADE AUIRFR2607Z Features VDSS 75V Advanced Process Technology RDS(on) typ. 17.6m Ultra Low On-Resistance 175 C Operating Temperature max. 22m Fast Switching ID (Silicon Limited) 45A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 42A Lead-Free, RoHS Compliant Automotive Qualified * D S Descr

 7.1. Size:285K  international rectifier
 auirfr2905ztr.pdf pdf_icon

AUIRFR2607ZTR

PD - 96320 AUTOMOTIVE GRADE AUIRFR2905Z HEXFET Power MOSFET V(BR)DSS 55V Features D l Advanced Process Technology RDS(on) typ. 11.1m l Ultra Low On-Resistance l 175 C Operating Temperature max. 14.5m G l Fast Switching ID (Silicon Limited) 59A l Repetitive Avalanche Allowed up to Tjmax S l Lead-Free, RoHS Compliant ID (Package Limited) 42A l Automotive Qualified *

 7.2. Size:204K  international rectifier
 auirfr2405.pdf pdf_icon

AUIRFR2607ZTR

PD - 97688A AUTOMOTIVE GRADE AUIRFR2405 Features HEXFET Power MOSFET l Advanced Planar Technology D V(BR)DSS 55V Dynamic dV/dT Rating RDS(on) typ. l Low On-Resistance 11.8m l 175 C Operating Temperature max 16m G l Fast Switching ID (Silicon Limited) 56A l Fully Avalanche Rated S l Repetitive Avalanche Allowed ID (Package Limited) 30A up to Tjmax l Lead-Free, R

MOSTRAR MÁS

Otros transistores... AUIRFN8405, AUIRFN8458, AUIRFN8459, AUIRFP2602, AUIRFP4409, AUIRFP4568-E, AUIRFR120ZTRL, AUIRFR2307ZTR, IRF740, AUIRFR2905ZTR, AUIRFR3504ZTR, AUIRFR3710ZTRL, AUIRFR4104TR, AUIRFR4105TR, AUIRFR4105ZTR, AUIRFR4292, AUIRFR48ZTR