AUIRFR2905ZTR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AUIRFR2905ZTR
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 110 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 42 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 VQgⓘ - Carga de la puerta: 29 nC
trⓘ - Tiempo de subida: 66 nS
Cossⓘ - Capacitancia de salida: 240 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0145 Ohm
Paquete / Cubierta: TO-252
Búsqueda de reemplazo de MOSFET AUIRFR2905ZTR
AUIRFR2905ZTR Datasheet (PDF)
auirfr2905ztr.pdf
PD - 96320AUTOMOTIVE GRADEAUIRFR2905ZHEXFET Power MOSFETV(BR)DSS55VFeaturesDl Advanced Process TechnologyRDS(on) typ.11.1ml Ultra Low On-Resistancel 175C Operating Temperature max. 14.5mGl Fast SwitchingID (Silicon Limited) 59A l Repetitive Avalanche Allowed up to TjmaxSl Lead-Free, RoHS CompliantID (Package Limited) 42A l Automotive Qualified *
auirfr2905z.pdf
AUTOMOTIVE GRADE AUIRFR2905Z Features VDSS 55V Advanced Process Technology RDS(on) typ. 11.1m Ultra Low On-Resistance 175C Operating Temperature max. 14.5m Fast Switching ID (Silicon Limited) 59A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 42A Lead-Free, RoHS Compliant Automotive Qualified * D S Des
auirfr2405.pdf
PD - 97688AAUTOMOTIVE GRADEAUIRFR2405Features HEXFET Power MOSFETl Advanced Planar TechnologyDV(BR)DSS55V Dynamic dV/dT RatingRDS(on) typ.l Low On-Resistance 11.8ml 175C Operating Temperaturemax 16mGl Fast SwitchingID (Silicon Limited)56Al Fully Avalanche RatedSl Repetitive Avalanche AllowedID (Package Limited)30Aup to Tjmaxl Lead-Free, R
auirfr2607ztr.pdf
PD - 96323AUTOMOTIVE MOSFETAUIRFR2607ZHEXFET Power MOSFETFeaturesV(BR)DSS75VDl Advanced Process TechnologyRDS(on) typ.l Ultra Low On-Resistance 17.6ml 175C Operating Temperaturemax. 22ml Fast Switching Gl Repetitive Avalanche Allowed up to TjmaxID (Silicon Limited) 45A Sl Lead-Free, RoHS CompliantID (Package Limited) 42A l Automotive Qualified *
auirfr2307ztr.pdf
PD - 97546AUTOMOTIVE GRADEAUIRFR2307ZFeaturesHEXFET Power MOSFET Advanced Process Technology Ultra Low On-ResistanceDV(BR)DSS 75V 175C Operating TemperatureRDS(on) max.16m Fast Switching Repetitive Avalanche Allowed up to Tjmax GID (Silicon Limited) 53A Lead-Free, RoHS CompliantSID (Package Limited) 42A Automotive Qualified *Desc
auirfr2607z.pdf
AUTOMOTIVE GRADE AUIRFR2607Z Features VDSS 75V Advanced Process Technology RDS(on) typ. 17.6m Ultra Low On-Resistance 175C Operating Temperature max. 22m Fast Switching ID (Silicon Limited) 45A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 42A Lead-Free, RoHS Compliant Automotive Qualified * D S Descr
auirfr2307z.pdf
AUTOMOTIVE GRADE AUIRFR2307Z Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance VDSS 75V 175C Operating Temperature RDS(on) max. 16m Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 53A Lead-Free, RoHS Compliant Automotive Qualified * ID (Package Limited) 42A D Descri
auirfr2407.pdf
AUTOMOTIVE GRADE AUIRFR2407 HEXFET Power MOSFET Features Advanced Planar Technology VDSS 75V Low On-Resistance Dynamic dV/dT Rating RDS(on) typ. 21.8m 175C Operating Temperature max. 26m Fast Switching Fully Avalanche Rated ID (Silicon Limited) 42A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D Automotive Qualifi
Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918