AUIRFR6215TR Todos los transistores

 ..1. Size:265K  international rectifier
 auirfr6215tr.pdf

PD-96302A AUTOMOTIVE GRADE AUIRFR6215 HEXFET Power MOSFET Features P-Channel D V(BR)DSS -150V Low On-Resistance Dynamic dV/dT Rating 175 C Operating Temperature RDS(on) max. 0.295 G Fast Switching Fully Avalanche Rated S ID -13A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D Description Specifically designed fo

 4.1. Size:483K  infineon
 auirfr6215.pdf

AUTOMOTIVE GRADE AUIRFR6215 Features VDSS -150V Advanced Planar Technology Low On-Resistance RDS(on) max. 0.295 P-Channel ID -13A Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching D Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant S Automotive Qualified * G D

 8.1. Size:485K  international rectifier
 auirfr3607 auirfu3607.pdf

AUTOMOTIVE GRADE AUIRFR3607 AUIRFU3607 Features Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance D 175 C Operating Temperature VDSS 75V Fast Switching RDS(on) typ. 7.34m Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant max. 9.0m Automotive Qualified * G ID (Silicon Limited) 80A S ID (Package Limited) 56A Description Specifically des

 8.2. Size:317K  international rectifier
 auirfr4104tr.pdf

PD - 97452A AUIRFR4104 AUTOMOTIVE GRADE AUIRFU4104 HEXFET Power MOSFET Features Advanced Process Technology D Ultra Low On-Resistance V(BR)DSS 40V 175 C Operating Temperature RDS(on) max. 5.5m Fast Switching G Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 119A Lead-Free, RoHS Compliant S ID (Package Limited) 42A Automotive Q

 8.3. Size:281K  international rectifier
 auirfr4292 auirfu4292.pdf

AUIRFR4292 AUTOMOTIVE GRADE AUIRFU4292 Features HEXFET Power MOSFET Advanced Process Technology D V(BR)DSS 250V Low On-Resistance RDS(on) typ. 275m 175 C Operating Temperature G Fast Switching max. 345m Repetitive Avalanche Allowed up to Tjmax S ID 9.3A Lead-Free, RoHS Compliant Automotive Qualified * D Description Specifically designed for Automotive applicatio

 8.4. Size:289K  international rectifier
 auirfr4615 auirfu4615.pdf

PD -96398A AUTOMOTIVE GRADE AUIRFR4615 AUIRFU4615 Features HEXFET Power MOSFET l Advanced Process Technology D l Low On-Resistance VDSS 150V l 175 C Operating Temperature l Fast Switching RDS(on) typ. 34m l Repetitive Avalanche Allowed up to Tjmax G max. 42m l Lead-Free, RoHS Compliant l Automotive Qualified * ID 33A S Description D D Specifically designed for Automo

 8.5. Size:309K  international rectifier
 auirfu120z auirfr120z.pdf

PD - 96345 AUIRFR120Z AUIRFU120Z AUTOMOTIVE MOSFET HEXFET Power MOSFET Features D V(BR)DSS 100V l Advanced Process Technology l Ultra Low On-Resistance RDS(on) typ. 150m l 175 C Operating Temperature G l Fast Switching max. 190m l Repetitive Avalanche Allowed up to Tjmax S ID 8.7A l Lead-Free, RoHS Compliant l Automotive Qualified * D D Description Specificall

 8.6. Size:285K  international rectifier
 auirfr2905ztr.pdf

PD - 96320 AUTOMOTIVE GRADE AUIRFR2905Z HEXFET Power MOSFET V(BR)DSS 55V Features D l Advanced Process Technology RDS(on) typ. 11.1m l Ultra Low On-Resistance l 175 C Operating Temperature max. 14.5m G l Fast Switching ID (Silicon Limited) 59A l Repetitive Avalanche Allowed up to Tjmax S l Lead-Free, RoHS Compliant ID (Package Limited) 42A l Automotive Qualified *

 8.7. Size:453K  international rectifier
 auirfr8401 auirfu8401.pdf

AUIRFR8401 AUTOMOTIVE GRADE AUIRFU8401 HEXFET Power MOSFET Features VDSS 40V D Advanced Process Technology New Ultra Low On-Resistance RDS(on) typ. 3.2m 175 C Operating Temperature 4.25m G max Fast Switching ID (Silicon Limited) 100A Repetitive Avalanche Allowed up to Tjmax S Lead-Free, RoHS Compliant ID

 8.8. Size:279K  international rectifier
 auirfr8403 auirfu8403.pdf

AUIRFR8403 AUIRFU8403 AUTOMOTIVE GRADE Features HEXFET Power MOSFET l Advanced Process Technology D VDSS 40V l New Ultra Low On-Resistance l 175 C Operating Temperature RDS(on) typ. 2.4m l Fast Switching l Repetitive Avalanche Allowed up to Tjmax max. 3.1m G l Lead-Free, RoHS Compliant ID (Silicon Limited) 127A l Automotive Qualified * Description S ID (Package L

 8.9. Size:204K  international rectifier
 auirfr2405.pdf

PD - 97688A AUTOMOTIVE GRADE AUIRFR2405 Features HEXFET Power MOSFET l Advanced Planar Technology D V(BR)DSS 55V Dynamic dV/dT Rating RDS(on) typ. l Low On-Resistance 11.8m l 175 C Operating Temperature max 16m G l Fast Switching ID (Silicon Limited) 56A l Fully Avalanche Rated S l Repetitive Avalanche Allowed ID (Package Limited) 30A up to Tjmax l Lead-Free, R

 8.10. Size:1107K  international rectifier
 auirfr5505tr.pdf

PD - 96342 AUTOMOTIVE GRADE AUIRFR5505 AUIRFU5505 Features HEXFET Power MOSFET Advanced Planar Technology D Low On-Resistance V(BR)DSS -55V P-Channel Dynamic dV/dT Rating RDS(on) max. 0.11 G 150 C Operating Temperature Fast Switching S Fully Avalanche Rated ID -18A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D Automotive Qualified

 8.11. Size:228K  international rectifier
 auirfr3504.pdf

PD - 97687A AUTOMOTIVE GRADE AUIRFR3504 Features HEXFET Power MOSFET l Advanced Planar Technology l Low On-Resistance D V(BR)DSS 40V l 175 C Operating Temperature RDS(on) typ. l Fast Switching 7.8m l Fully Avalanche Rated max 9.2m G l Repetitive Avalanche Allowed ID (Silicon Limited) 87A up to Tjmax S ID (Package Limited) l Lead-Free, RoHS Compliant 56A l Automotiv

 8.12. Size:272K  international rectifier
 auirfr3710ztrl.pdf

PD - 97451 AUTOMOTIVE GRADE AUIRFR3710Z HEXFET Power MOSFET Features D l Advanced Process Technology V(BR)DSS 100V l Ultra Low On-Resistance RDS(on) max. 18m l 175 C Operating Temperature G l Fast Switching ID (Silicon Limited) 56A l Repetitive Avalanche Allowed up to Tjmax S ID (Package Limited) 42A l Lead-Free, RoHS Compliant l Automotive Qualified * Description

 8.13. Size:317K  international rectifier
 auirfr4105ztr.pdf

PD - 97544 AUTOMOTIVE GRADE AUIRFR4105Z AUIRFU4105Z HEXFET Power MOSFET Features D Advanced Process Technology V(BR)DSS 55V Ultra Low On-Resistance 175 C Operating Temperature RDS(on) max. 24.5m G Fast Switching Repetitive Avalanche Allowed up to Tjmax ID S 30A Lead-Free, RoHS Compliant Automotive Qualified * Description D Specifically de

 8.14. Size:300K  international rectifier
 auirfr5305tr.pdf

PD-96341 AUTOMOTIVE MOSFET AUIRFR5305 AUIRFU5305 HEXFET Power MOSFET D Features V(BR)DSS -55V Advanced Planar Technology Low On-Resistance RDS(on) max. 0.065 Dynamic dV/dT Rating G 175 C Operating Temperature Fast Switching S ID -31A Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D D Automotive Qualified * S Descri

 8.15. Size:282K  international rectifier
 auirfr2607ztr.pdf

PD - 96323 AUTOMOTIVE MOSFET AUIRFR2607Z HEXFET Power MOSFET Features V(BR)DSS 75V D l Advanced Process Technology RDS(on) typ. l Ultra Low On-Resistance 17.6m l 175 C Operating Temperature max. 22m l Fast Switching G l Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 45A S l Lead-Free, RoHS Compliant ID (Package Limited) 42A l Automotive Qualified *

 8.16. Size:285K  international rectifier
 auirfr540z auirfu540z.pdf

AUTOMOTIVE GRADE AUIRFR540Z AUIRFU540Z HEXFET Power MOSFET VDSS 100V D D RDS(on) typ. 22.5m S max. 28.5m S D G G G ID 35A D-Pak I-Pak S AUIRFR540Z AUIRFU540Z Applications l Automatic Voltage Regulator (AVR) GDS l Solenoid Injection Gate Drain Source l Body Control l Low Power Automotive Applications Standard Pack Base part number Package Type Orderable Part Number

 8.17. Size:292K  international rectifier
 auirfr48ztr.pdf

PD - 97586 AUTOMOTIVE GRADE AUIRFR48Z HEXFET Power MOSFET Features Advanced Process Technology D V(BR)DSS 55V Ultra Low On-Resistance RDS(on) max. 11m 175 C Operating Temperature Fast Switching G ID (Silicon Limited) 62A Repetitive Avalanche Allowed up to Tjmax S ID (Package Limited) 42A Lead-Free, RoHS Compliant Automotive Qualified * Des

 8.18. Size:242K  international rectifier
 auirfr1010z.pdf

PD - 97683 AUTOMOTIVE GRADE AUIRFR1010Z HEXFET Power MOSFET Features D VDSS Advanced Process Technology 55V Low On-Resistance RDS(on) typ. 5.8m 175 C Operating Temperature max. 7.5m G Fast Switching ID (Silicon Limited) 91A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) S 42A Lead-Free, RoHS Compliant Automotive Qualifie

 8.19. Size:238K  international rectifier
 auirfr4105tr.pdf

PD - 97597A AUTOMOTIVE GRADE AUIRFR4105 HEXFET Power MOSFET Features D V(BR)DSS 55V Advanced Planar Technology Low On-Resistance RDS(on) max. 45m Dynamic dV/dT Rating G ID (Silicon Limited) 27A 175 C Operating Temperature Fast Switching ID (Package Limited) 20A S Fully Avalanche Rated Repetitive Avalanche Allowed up toTjmax Lead-Free,

 8.20. Size:532K  international rectifier
 auirfu5505 auirfr5505.pdf

AUIRFR5505 AUTOMOTIVE GRADE AUIRFU5505 Features VDSS -55V Advanced Planar Technology Low On-Resistance RDS(on) max. 0.11 P-Channel ID -18A Dynamic dv/dt Rating 150 C Operating Temperature Fast Switching D Fully Avalanche Rated D Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualifie

 8.21. Size:292K  international rectifier
 auirfr8405 auirfu8405.pdf

AUIRFR8405 AUTOMOTIVE GRADE AUIRFU8405 Features HEXFET Power MOSFET l Advanced Process Technology l New Ultra Low On-Resistance VDSS 40V l 175 C Operating Temperature RDS(on) typ. 1.65m l Fast Switching l Repetitive Avalanche Allowed up to Tjmax max. 1.98m l Lead-Free, RoHS Compliant l Automotive Qualified * ID (Silicon Limited) 211A Description Specifically designed for A

 8.22. Size:268K  international rectifier
 auirfr3504ztr.pdf

PD - 97492 AUIRFR3504Z AUTOMOTIVE GRADE HEXFET Power MOSFET Features Advanced Process Technology D V(BR)DSS 40V Low On-Resistance 175 C Operating Temperature RDS(on) max. 9.0m Fast Switching G ID (Silicon Limited) 77A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant ID (Package Limited) 42A S Automotive Qualified * Description D Specifical

 8.23. Size:309K  international rectifier
 auirfr120ztrl.pdf

PD - 96345 AUIRFR120Z AUIRFU120Z AUTOMOTIVE MOSFET HEXFET Power MOSFET Features D V(BR)DSS 100V l Advanced Process Technology l Ultra Low On-Resistance RDS(on) typ. 150m l 175 C Operating Temperature G l Fast Switching max. 190m l Repetitive Avalanche Allowed up to Tjmax S ID 8.7A l Lead-Free, RoHS Compliant l Automotive Qualified * D D Description Specificall

 8.24. Size:220K  international rectifier
 auirfr5410tr.pdf

 8.25. Size:278K  international rectifier
 auirfr3710z.pdf

PD - 97451 AUTOMOTIVE GRADE AUIRFR3710Z HEXFET Power MOSFET Features D l Advanced Process Technology V(BR)DSS 100V l Ultra Low On-Resistance RDS(on) max. 18m l 175 C Operating Temperature G l Fast Switching ID (Silicon Limited) 56A l Repetitive Avalanche Allowed up to Tjmax S ID (Package Limited) 42A l Lead-Free, RoHS Compliant l Automotive Qualified * Description

 8.26. Size:298K  international rectifier
 auirfr2307ztr.pdf

PD - 97546 AUTOMOTIVE GRADE AUIRFR2307Z Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D V(BR)DSS 75V 175 C Operating Temperature RDS(on) max. 16m Fast Switching Repetitive Avalanche Allowed up to Tjmax G ID (Silicon Limited) 53A Lead-Free, RoHS Compliant S ID (Package Limited) 42A Automotive Qualified * Desc

 8.27. Size:678K  infineon
 auirfr48z.pdf

AUTOMOTIVE GRADE AUIRFR48Z Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance VDSS 55V 175 C Operating Temperature RDS(on) max. 11m Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 62A Lead-Free, RoHS Compliant Automotive Qualified * ID (Package Limited) 42A D Descript

 8.28. Size:483K  infineon
 auirfr024n auirfu024n.pdf

AUIRFR024N AUTOMOTIVE GRADE AUIRFU024N Features VDSS 55V Advanced Planar Technology Low On-Resistance RDS(on) max. 0.075 Dynamic dv/dt Rating ID 17A 175 C Operating Temperature Fast Switching Fully Avalanche Rated D Repetitive Avalanche Allowed up to Tjmax D Lead-Free, RoHS Compliant Automotive Qualified * S S

 8.29. Size:719K  infineon
 auirfr4292 auirfu4292.pdf

AUIRFR4292 AUTOMOTIVE GRADE AUIRFU4292 Features VDSS 250V Advanced Process Technology RDS(on) typ. 275m Low On-Resistance max. 175 C Operating Temperature 345m Fast Switching ID 9.3A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D Automotive Qualified * D S S Description D G G Specifical

 8.30. Size:668K  infineon
 auirfr2905z.pdf

AUTOMOTIVE GRADE AUIRFR2905Z Features VDSS 55V Advanced Process Technology RDS(on) typ. 11.1m Ultra Low On-Resistance 175 C Operating Temperature max. 14.5m Fast Switching ID (Silicon Limited) 59A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 42A Lead-Free, RoHS Compliant Automotive Qualified * D S Des

 8.31. Size:671K  infineon
 auirfr2607z.pdf

AUTOMOTIVE GRADE AUIRFR2607Z Features VDSS 75V Advanced Process Technology RDS(on) typ. 17.6m Ultra Low On-Resistance 175 C Operating Temperature max. 22m Fast Switching ID (Silicon Limited) 45A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 42A Lead-Free, RoHS Compliant Automotive Qualified * D S Descr

 8.32. Size:679K  infineon
 auirfr8401 auirfu8401.pdf

AUIRFR8401 AUTOMOTIVE GRADE AUIRFU8401 Features HEXFET Power MOSFET Advanced Process Technology VDSS 40V New Ultra Low On-Resistance 175 C Operating Temperature RDS(on) typ. 3.2m Fast Switching max. 4.25m Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 100A Lead-Free, RoHS Compliant ID (Package Limited) 100A

 8.33. Size:529K  infineon
 auirfr9024n auirfu9024n.pdf

AUIRFR9024N AUTOMOTIVE GRADE AUIRFU9024N Features HEXFET Power MOSFET Advanced Planar Technology VDSS -55V Low On-Resistance P-Channel RDS(on) max. 0.175 Dynamic dv/dt Rating ID -11A 150 C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax D D Lead-Free, RoHS Complian

 8.34. Size:686K  infineon
 auirfr8403 auirfu8403.pdf

AUIRFR8403 AUTOMOTIVE GRADE AUIRFU8403 Features HEXFET Power MOSFET Advanced Process Technology VDSS 40V New Ultra Low On-Resistance 175 C Operating Temperature RDS(on) typ. 2.4m Fast Switching max. 3.1m Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 127A Lead-Free, RoHS Compliant ID (Package Limited) 100A

 8.35. Size:698K  infineon
 auirfr3806.pdf

AUTOMOTIVE GRADE AUIRFR3806 Features HEXFET Power MOSFET Advanced Process Technology VDSS 60V Ultra Low On-Resistance RDS(on) typ. 12.6m Dynamic dV/dT Rating max. 15.8m 175 C Operating Temperature ID 43A Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D Desc

 8.36. Size:528K  infineon
 auirfr5305 auirfu5305.pdf

AUIRFR5305 AUTOMOTIVE GRADE AUIRFU5305 Features VDSS -55V Advanced Planar Technology Low On-Resistance RDS(on) max. 0.065 Dynamic dv/dt Rating ID -31A 175 C Operating Temperature Fast Switching Fully Avalanche Rated D Repetitive Avalanche Allowed up to Tjmax D Lead-Free, RoHS Compliant Automotive Qualified * S S D

 8.37. Size:678K  infineon
 auirfr2307z.pdf

AUTOMOTIVE GRADE AUIRFR2307Z Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance VDSS 75V 175 C Operating Temperature RDS(on) max. 16m Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 53A Lead-Free, RoHS Compliant Automotive Qualified * ID (Package Limited) 42A D Descri

 8.38. Size:318K  infineon
 auirfr5410.pdf

AUTOMOTIVE GRADE AUIRFR5410 Features HEXFET Power MOSFET Advanced Planar Technology VDSS -100V P-Channel MOSFET Low On-Resistance RDS(on) max. 0.205 Dynamic dV/dT Rating 175 C Operating Temperature ID -13A Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D Aut

 8.39. Size:619K  infineon
 auirfr1018e.pdf

AUTOMOTIVE GRADE AUIRFR1018E Features HEXFET Power MOSFET Advanced Process Technology VDSS 60V Ultra Low On-Resistance RDS(on) typ. 7.1m 175 C Operating Temperature max. 8.4m Fast Switching ID (Silicon Limited) 79A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 56A Lead-Free, RoHS Compliant Automotive Qu

 8.40. Size:725K  infineon
 auirfr540z auirfu540z.pdf

AUIRFR540Z AUTOMOTIVE GRADE AUIRFU540Z HEXFET Power MOSFET Application VDSS 100V Automatic Voltage Regulator (AVR) RDS(on) typ. 22.5m Solenoid Injection Body Control max. 28.5m Low Power Automotive Applications ID 35A D D Description Specifically designed for Automotive applications, this HEXFET S Power MOSFET utilizes the lates

 8.41. Size:626K  infineon
 auirfr4620.pdf

AUTOMOTIVE GRADE AUIRFR4620 Features HEXFET Power MOSFET Advanced Process Technology VDSS 200V Ultra Low On-Resistance RDS(on) typ. 64m Dynamic dV/dT Rating max. 78m 175 C Operating Temperature ID 24A Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D Descrip

 8.42. Size:688K  infineon
 auirfr8405 auirfu8405.pdf

AUIRFR8405 AUTOMOTIVE GRADE AUIRFU8405 Features VDSS 40V Advanced Process Technology RDS(on) typ. 1.65m New Ultra Low On-Resistance max. 1.98m 175 C Operating Temperature ID (Silicon Limited) 211A Fast Switching ID (Package Limited) 100A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D Automotive

 8.43. Size:473K  infineon
 auirfr2407.pdf

AUTOMOTIVE GRADE AUIRFR2407 HEXFET Power MOSFET Features Advanced Planar Technology VDSS 75V Low On-Resistance Dynamic dV/dT Rating RDS(on) typ. 21.8m 175 C Operating Temperature max. 26m Fast Switching Fully Avalanche Rated ID (Silicon Limited) 42A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D Automotive Qualifi

 8.44. Size:715K  infineon
 auirfr4104 auirfu4104.pdf

AUIRFR4104 AUTOMOTIVE GRADE AUIRFU4104 Features HEXFET Power MOSFET Advanced Process Technology Low On-Resistance VDSS 40V 175 C Operating Temperature RDS(on) max. 5.5m Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 119A Lead-Free, RoHS Compliant Automotive Qualified * ID (Package Limited) 42A D

 8.45. Size:720K  infineon
 auirfr4105z auirfu4105z.pdf

AUIRFR4105Z AUTOMOTIVE GRADE AUIRFU4105Z Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance VDSS 55V 175 C Operating Temperature Fast Switching RDS(on) max. 24.5m Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant ID 30A Automotive Qualified * D D Description Specifically designed

 8.46. Size:664K  infineon
 auirfr3504z.pdf

AUTOMOTIVE GRADE AUIRFR3504Z Features HEXFET Power MOSFET Advanced Process Technology Low On-Resistance VDSS 40V 175 C Operating Temperature RDS(on) max. 9.0m Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 77A Lead-Free, RoHS Compliant Automotive Qualified * ID (Package Limited) 42A D Description