AUIRFR6215TR Todos los transistores

 

AUIRFR6215TR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AUIRFR6215TR
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 110 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 13 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 66 nC
   trⓘ - Tiempo de subida: 36 nS
   Cossⓘ - Capacitancia de salida: 220 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.295 Ohm
   Paquete / Cubierta: TO-252
     - Selección de transistores por parámetros

 

AUIRFR6215TR Datasheet (PDF)

 ..1. Size:265K  international rectifier
auirfr6215tr.pdf pdf_icon

AUIRFR6215TR

PD-96302AAUTOMOTIVE GRADEAUIRFR6215HEXFET Power MOSFETFeatures P-ChannelDV(BR)DSS -150V Low On-Resistance Dynamic dV/dT Rating 175C Operating Temperature RDS(on) max.0.295G Fast Switching Fully Avalanche RatedSID -13A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *DDescriptionSpecifically designed fo

 4.1. Size:483K  infineon
auirfr6215.pdf pdf_icon

AUIRFR6215TR

AUTOMOTIVE GRADE AUIRFR6215 Features VDSS -150V Advanced Planar Technology Low On-Resistance RDS(on) max. 0.295 P-Channel ID -13A Dynamic dv/dt Rating 175C Operating Temperature Fast Switching D Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant S Automotive Qualified * G D

 8.1. Size:485K  international rectifier
auirfr3607 auirfu3607.pdf pdf_icon

AUIRFR6215TR

AUTOMOTIVE GRADEAUIRFR3607AUIRFU3607FeaturesAdvanced Process TechnologyHEXFET Power MOSFETUltra Low On-ResistanceD175C Operating TemperatureVDSS 75VFast SwitchingRDS(on) typ. 7.34mRepetitive Avalanche Allowed up to TjmaxLead-Free, RoHS Compliant max. 9.0mAutomotive Qualified *GID (Silicon Limited) 80AS ID (Package Limited) 56ADescriptionSpecifically des

 8.2. Size:317K  international rectifier
auirfr4104tr.pdf pdf_icon

AUIRFR6215TR

PD - 97452AAUIRFR4104AUTOMOTIVE GRADEAUIRFU4104HEXFET Power MOSFETFeatures Advanced Process TechnologyD Ultra Low On-ResistanceV(BR)DSS 40V 175C Operating TemperatureRDS(on) max.5.5m Fast SwitchingG Repetitive Avalanche Allowed up to TjmaxID (Silicon Limited)119A Lead-Free, RoHS CompliantSID (Package Limited) 42A Automotive Q

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: NCEP070N10GU | STW24N60M2

 

 
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