AUIRFS8403 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AUIRFS8403
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 99 W
Voltaje máximo drenador - fuente |Vds|: 40 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 123 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 3.9 V
Carga de la puerta (Qg): 62 nC
Tiempo de subida (tr): 77 nS
Conductancia de drenaje-sustrato (Cd): 475 pF
Resistencia entre drenaje y fuente RDS(on): 0.0033 Ohm
Paquete / Cubierta: TO-263
Búsqueda de reemplazo de MOSFET AUIRFS8403
AUIRFS8403 Datasheet (PDF)
auirfs8403 auirfsl8403.pdf
AUIRFS8403AUTOMOTIVE GRADEAUIRFSL8403HEXFET Power MOSFETFeaturesl Advanced Process TechnologyDVDSS 40Vl New Ultra Low On-Resistancel 175C Operating TemperatureRDS(on) typ. 2.6ml Fast Switchingl Repetitive Avalanche Allowed up to TjmaxG max. 3.3ml Lead-Free, RoHS Compliant Automotive Qualified *SID (Silicon Limited) 123ADescriptionSpecifically desi
auirfs8403 auirfsl8403.pdf
AUIRFS8403AUTOMOTIVE GRADEAUIRFSL8403HEXFET Power MOSFETFeaturesl Advanced Process TechnologyDVDSS 40Vl New Ultra Low On-Resistancel 175C Operating TemperatureRDS(on) typ. 2.6ml Fast Switchingl Repetitive Avalanche Allowed up to TjmaxG max. 3.3ml Lead-Free, RoHS Compliant Automotive Qualified *SID (Silicon Limited) 123ADescriptionSpecifically desi
auirfs8409-7p.pdf
AUIRFS8409-7PAUTOMOTIVE GRADEFeaturesHEXFET Power MOSFETl Advanced Process Technology40VVDSSl New Ultra Low On-Resistance0.55mRDS(on) typ. l 175C Operating Temperature max. 0.75ml Fast Switchingl Repetitive Avalanche Allowed up to Tjmax522AID (Silicon Limited)l Lead-Free, RoHS Compliant240A ID (Package Limited)l Automotive Qualified *Description
auirfb8409 auirfs8409 auirfsl8409.pdf
AUIRFB8409AUTOMOTIVE GRADE AUIRFS8409AUIRFSL8409FeaturesHEXFET Power MOSFETl Advanced Process TechnologyDl New Ultra Low On-Resistance VDSS 40Vl 175C Operating TemperatureRDS(on) (SMD) typ. 0.97ml Fast Switching max. 1.2ml Repetitive Avalanche Allowed up to TjmaxGl Lead-Free, RoHS Compliant ID (Silicon Limited) 409Al Automotive Qualified *ID (Package Li
auirfs8405 auirfsl8405.pdf
AUIRFS8405AUTOMOTIVE GRADEAUIRFSL8405FeaturesHEXFET Power MOSFETl Advanced Process TechnologyDl New Ultra Low On-Resistance VDSS 40Vl 175C Operating TemperatureRDS(on) typ.1.9ml Fast Switching max. 2.3ml Repetitive Avalanche Allowed up to Tjmaxl Lead-Free, RoHS Compliant GID (Silicon Limited) 193Al Automotive Qualified *ID (Package Limited) 120A SDe
auirfb8407 auirfs8407 auirfsl8407.pdf
AUIRFB8407AUTOMOTIVE GRADEAUIRFS8407AUIRFSL8407FeaturesHEXFET Power MOSFETl Advanced Process Technologyl New Ultra Low On-ResistanceVDSS 40VDl 175C Operating TemperatureRDS(on) typ. 1.4ml Fast Switching l Repetitive Avalanche Allowed up to Tjmax(SMD version) max. 1.8m l Lead-Free, RoHS CompliantG250AID (Silicon Limited) Automotive Qualified *S
auirfs8407-7p.pdf
AUTOMOTIVE GRADEAUIRFS8407-7PFeaturesHEXFET Power MOSFET Advanced Process TechnologyD New Ultra Low On-ResistanceVDSS 40V 175C Operating TemperatureRDS(on) typ.1.0m Fast Switching Repetitive Avalanche Allowed up to Tjmax max. 1.3m Lead-Free, RoHS CompliantGID (Silicon Limited) 306A Automotive Qualified *DescriptionID (Package L
auirfs8408 auirfsl8408.pdf
AUIRFS8408AUTOMOTIVE GRADEAUIRFSL8408FeaturesHEXFET Power MOSFETl Advanced Process TechnologyVDSS 40Vl New Ultra Low On-Resistancel 175C Operating TemperatureRDS(on) typ. 1.3ml Fast Switching max. 1.6ml Repetitive Avalanche Allowed up to TjmaxID (Silicon Limited) 317Al Lead-Free, RoHS Compliantl Automotive Qualified *ID (Package Limited) 195A Descri
auirfs8408-7p.pdf
AUIRFS8408-7PAUTOMOTIVE GRADEFeaturesHEXFET Power MOSFETl Advanced Process Technology40VVDSSl New Ultra Low On-Resistance0.70mRDS(on) typ. l 175C Operating Temperaturel Fast Switching max. 1.0ml Repetitive Avalanche Allowed up to Tjmax397AID (Silicon Limited)l Lead-Free, RoHS Compliant240A ID (Package Limited)l Automotive Qualified *Description
auirfs8409-7p.pdf
AUIRFS8409-7PAUTOMOTIVE GRADEFeaturesHEXFET Power MOSFETl Advanced Process Technology40VVDSSl New Ultra Low On-Resistance0.55mRDS(on) typ. l 175C Operating Temperature max. 0.75ml Fast Switchingl Repetitive Avalanche Allowed up to Tjmax522AID (Silicon Limited)l Lead-Free, RoHS Compliant240A ID (Package Limited)l Automotive Qualified *Description
auirfb8409 auirfs8409 auirfsl8409.pdf
AUIRFB8409AUTOMOTIVE GRADE AUIRFS8409AUIRFSL8409FeaturesHEXFET Power MOSFETl Advanced Process TechnologyDl New Ultra Low On-Resistance VDSS 40Vl 175C Operating TemperatureRDS(on) (SMD) typ. 0.97ml Fast Switching max. 1.2ml Repetitive Avalanche Allowed up to TjmaxGl Lead-Free, RoHS Compliant ID (Silicon Limited) 409Al Automotive Qualified *ID (Package Li
auirfs8405 auirfsl8405.pdf
AUIRFS8405AUTOMOTIVE GRADEAUIRFSL8405FeaturesHEXFET Power MOSFETl Advanced Process TechnologyDl New Ultra Low On-Resistance VDSS 40Vl 175C Operating TemperatureRDS(on) typ.1.9ml Fast Switching max. 2.3ml Repetitive Avalanche Allowed up to Tjmaxl Lead-Free, RoHS Compliant GID (Silicon Limited) 193Al Automotive Qualified *ID (Package Limited) 120A SDe
auirfb8407 auirfs8407 auirfsl8407.pdf
AUIRFB8407AUTOMOTIVE GRADEAUIRFS8407AUIRFSL8407FeaturesHEXFET Power MOSFETl Advanced Process Technologyl New Ultra Low On-ResistanceVDSS 40VDl 175C Operating TemperatureRDS(on) typ. 1.4ml Fast Switching l Repetitive Avalanche Allowed up to Tjmax(SMD version) max. 1.8m l Lead-Free, RoHS CompliantG250AID (Silicon Limited) Automotive Qualified *S
auirfs8407-7p.pdf
AUTOMOTIVE GRADEAUIRFS8407-7PFeaturesHEXFET Power MOSFET Advanced Process TechnologyD New Ultra Low On-ResistanceVDSS 40V 175C Operating TemperatureRDS(on) typ.1.0m Fast Switching Repetitive Avalanche Allowed up to Tjmax max. 1.3m Lead-Free, RoHS CompliantGID (Silicon Limited) 306A Automotive Qualified *DescriptionID (Package L
auirfs8408-7p.pdf
AUIRFS8408-7PAUTOMOTIVE GRADEFeaturesHEXFET Power MOSFETl Advanced Process Technology40VVDSSl New Ultra Low On-Resistance0.70mRDS(on) typ. l 175C Operating Temperaturel Fast Switching max. 1.0ml Repetitive Avalanche Allowed up to Tjmax397AID (Silicon Limited)l Lead-Free, RoHS Compliant240A ID (Package Limited)l Automotive Qualified *Description
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: BSS123K2 | BRU26N50 | BRU24N50 | BRI7N65 | BRI7N60 | BRI740 | BRI65R380C | BRI5N65 | BRI50N06 | BRI4N70 | BRI2N70 | BRGN250N65YK | BRFL8N65 | BRFL7N65S | BRFL70R360C | BRFL65R380C