AUIRFS8405 Todos los transistores

 

AUIRFS8405 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AUIRFS8405
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 163 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 120 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 128 nS
   Cossⓘ - Capacitancia de salida: 754 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0023 Ohm
   Paquete / Cubierta: TO-263

 Búsqueda de reemplazo de MOSFET AUIRFS8405

 

AUIRFS8405 Datasheet (PDF)

 ..1. Size:351K  international rectifier
auirfs8405 auirfsl8405.pdf

AUIRFS8405
AUIRFS8405

AUIRFS8405AUTOMOTIVE GRADEAUIRFSL8405FeaturesHEXFET Power MOSFETl Advanced Process TechnologyDl New Ultra Low On-Resistance VDSS 40Vl 175C Operating TemperatureRDS(on) typ.1.9ml Fast Switching max. 2.3ml Repetitive Avalanche Allowed up to Tjmaxl Lead-Free, RoHS Compliant GID (Silicon Limited) 193Al Automotive Qualified *ID (Package Limited) 120A SDe

 ..2. Size:351K  infineon
auirfs8405 auirfsl8405.pdf

AUIRFS8405
AUIRFS8405

AUIRFS8405AUTOMOTIVE GRADEAUIRFSL8405FeaturesHEXFET Power MOSFETl Advanced Process TechnologyDl New Ultra Low On-Resistance VDSS 40Vl 175C Operating TemperatureRDS(on) typ.1.9ml Fast Switching max. 2.3ml Repetitive Avalanche Allowed up to Tjmaxl Lead-Free, RoHS Compliant GID (Silicon Limited) 193Al Automotive Qualified *ID (Package Limited) 120A SDe

 5.1. Size:277K  international rectifier
auirfs8403 auirfsl8403.pdf

AUIRFS8405
AUIRFS8405

AUIRFS8403AUTOMOTIVE GRADEAUIRFSL8403HEXFET Power MOSFETFeaturesl Advanced Process TechnologyDVDSS 40Vl New Ultra Low On-Resistancel 175C Operating TemperatureRDS(on) typ. 2.6ml Fast Switchingl Repetitive Avalanche Allowed up to TjmaxG max. 3.3ml Lead-Free, RoHS Compliant Automotive Qualified *SID (Silicon Limited) 123ADescriptionSpecifically desi

 5.2. Size:277K  international rectifier
auirfs8409-7p.pdf

AUIRFS8405
AUIRFS8405

AUIRFS8409-7PAUTOMOTIVE GRADEFeaturesHEXFET Power MOSFETl Advanced Process Technology40VVDSSl New Ultra Low On-Resistance0.55mRDS(on) typ. l 175C Operating Temperature max. 0.75ml Fast Switchingl Repetitive Avalanche Allowed up to Tjmax522AID (Silicon Limited)l Lead-Free, RoHS Compliant240A ID (Package Limited)l Automotive Qualified *Description

 5.3. Size:398K  international rectifier
auirfb8409 auirfs8409 auirfsl8409.pdf

AUIRFS8405
AUIRFS8405

AUIRFB8409AUTOMOTIVE GRADE AUIRFS8409AUIRFSL8409FeaturesHEXFET Power MOSFETl Advanced Process TechnologyDl New Ultra Low On-Resistance VDSS 40Vl 175C Operating TemperatureRDS(on) (SMD) typ. 0.97ml Fast Switching max. 1.2ml Repetitive Avalanche Allowed up to TjmaxGl Lead-Free, RoHS Compliant ID (Silicon Limited) 409Al Automotive Qualified *ID (Package Li

 5.4. Size:340K  international rectifier
auirfb8407 auirfs8407 auirfsl8407.pdf

AUIRFS8405
AUIRFS8405

AUIRFB8407AUTOMOTIVE GRADEAUIRFS8407AUIRFSL8407FeaturesHEXFET Power MOSFETl Advanced Process Technologyl New Ultra Low On-ResistanceVDSS 40VDl 175C Operating TemperatureRDS(on) typ. 1.4ml Fast Switching l Repetitive Avalanche Allowed up to Tjmax(SMD version) max. 1.8m l Lead-Free, RoHS CompliantG250AID (Silicon Limited) Automotive Qualified *S

 5.5. Size:220K  international rectifier
auirfs8407-7p.pdf

AUIRFS8405
AUIRFS8405

AUTOMOTIVE GRADEAUIRFS8407-7PFeaturesHEXFET Power MOSFET Advanced Process TechnologyD New Ultra Low On-ResistanceVDSS 40V 175C Operating TemperatureRDS(on) typ.1.0m Fast Switching Repetitive Avalanche Allowed up to Tjmax max. 1.3m Lead-Free, RoHS CompliantGID (Silicon Limited) 306A Automotive Qualified *DescriptionID (Package L

 5.6. Size:291K  international rectifier
auirfs8408 auirfsl8408.pdf

AUIRFS8405
AUIRFS8405

AUIRFS8408AUTOMOTIVE GRADEAUIRFSL8408FeaturesHEXFET Power MOSFETl Advanced Process TechnologyVDSS 40Vl New Ultra Low On-Resistancel 175C Operating TemperatureRDS(on) typ. 1.3ml Fast Switching max. 1.6ml Repetitive Avalanche Allowed up to TjmaxID (Silicon Limited) 317Al Lead-Free, RoHS Compliantl Automotive Qualified *ID (Package Limited) 195A Descri

 5.7. Size:275K  international rectifier
auirfs8408-7p.pdf

AUIRFS8405
AUIRFS8405

AUIRFS8408-7PAUTOMOTIVE GRADEFeaturesHEXFET Power MOSFETl Advanced Process Technology40VVDSSl New Ultra Low On-Resistance0.70mRDS(on) typ. l 175C Operating Temperaturel Fast Switching max. 1.0ml Repetitive Avalanche Allowed up to Tjmax397AID (Silicon Limited)l Lead-Free, RoHS Compliant240A ID (Package Limited)l Automotive Qualified *Description

 5.8. Size:277K  infineon
auirfs8403 auirfsl8403.pdf

AUIRFS8405
AUIRFS8405

AUIRFS8403AUTOMOTIVE GRADEAUIRFSL8403HEXFET Power MOSFETFeaturesl Advanced Process TechnologyDVDSS 40Vl New Ultra Low On-Resistancel 175C Operating TemperatureRDS(on) typ. 2.6ml Fast Switchingl Repetitive Avalanche Allowed up to TjmaxG max. 3.3ml Lead-Free, RoHS Compliant Automotive Qualified *SID (Silicon Limited) 123ADescriptionSpecifically desi

 5.9. Size:277K  infineon
auirfs8409-7p.pdf

AUIRFS8405
AUIRFS8405

AUIRFS8409-7PAUTOMOTIVE GRADEFeaturesHEXFET Power MOSFETl Advanced Process Technology40VVDSSl New Ultra Low On-Resistance0.55mRDS(on) typ. l 175C Operating Temperature max. 0.75ml Fast Switchingl Repetitive Avalanche Allowed up to Tjmax522AID (Silicon Limited)l Lead-Free, RoHS Compliant240A ID (Package Limited)l Automotive Qualified *Description

 5.10. Size:398K  infineon
auirfb8409 auirfs8409 auirfsl8409.pdf

AUIRFS8405
AUIRFS8405

AUIRFB8409AUTOMOTIVE GRADE AUIRFS8409AUIRFSL8409FeaturesHEXFET Power MOSFETl Advanced Process TechnologyDl New Ultra Low On-Resistance VDSS 40Vl 175C Operating TemperatureRDS(on) (SMD) typ. 0.97ml Fast Switching max. 1.2ml Repetitive Avalanche Allowed up to TjmaxGl Lead-Free, RoHS Compliant ID (Silicon Limited) 409Al Automotive Qualified *ID (Package Li

 5.11. Size:340K  infineon
auirfb8407 auirfs8407 auirfsl8407.pdf

AUIRFS8405
AUIRFS8405

AUIRFB8407AUTOMOTIVE GRADEAUIRFS8407AUIRFSL8407FeaturesHEXFET Power MOSFETl Advanced Process Technologyl New Ultra Low On-ResistanceVDSS 40VDl 175C Operating TemperatureRDS(on) typ. 1.4ml Fast Switching l Repetitive Avalanche Allowed up to Tjmax(SMD version) max. 1.8m l Lead-Free, RoHS CompliantG250AID (Silicon Limited) Automotive Qualified *S

 5.12. Size:220K  infineon
auirfs8407-7p.pdf

AUIRFS8405
AUIRFS8405

AUTOMOTIVE GRADEAUIRFS8407-7PFeaturesHEXFET Power MOSFET Advanced Process TechnologyD New Ultra Low On-ResistanceVDSS 40V 175C Operating TemperatureRDS(on) typ.1.0m Fast Switching Repetitive Avalanche Allowed up to Tjmax max. 1.3m Lead-Free, RoHS CompliantGID (Silicon Limited) 306A Automotive Qualified *DescriptionID (Package L

 5.13. Size:275K  infineon
auirfs8408-7p.pdf

AUIRFS8405
AUIRFS8405

AUIRFS8408-7PAUTOMOTIVE GRADEFeaturesHEXFET Power MOSFETl Advanced Process Technology40VVDSSl New Ultra Low On-Resistance0.70mRDS(on) typ. l 175C Operating Temperaturel Fast Switching max. 1.0ml Repetitive Avalanche Allowed up to Tjmax397AID (Silicon Limited)l Lead-Free, RoHS Compliant240A ID (Package Limited)l Automotive Qualified *Description

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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