AUIRFSL6535 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AUIRFSL6535
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 210 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 300 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 19 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   Qgⓘ - Carga de la puerta: 38 nC
   trⓘ - Tiempo de subida: 16 nS
   Cossⓘ - Capacitancia de salida: 195 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.185 Ohm
   Paquete / Cubierta: TO-262

Búsqueda de reemplazo de MOSFET AUIRFSL6535

AUIRFSL6535 Datasheet (PDF)

..1. Size:266K international rectifier
auirfs6535 auirfsl6535.pdf

AUTOMOTIVE GRADEAUIRFS6535AUIRFSL6535FeaturesHEXFET Power MOSFET Advanced Process TechnologyD Low On-ResistanceV(BR)DSS 300V 175C Operating TemperatureRDS(on) typ. 148m Fast SwitchingGmax. 185m Repetitive Avalanche Allowed up to TjmaxSID 19A Lead-Free, RoHS Compliant Automotive Qualified *DescriptionDSpecifically designed

..2. Size:701K infineon
auirfs6535 auirfsl6535.pdf

AUTOMOTIVE GRADE AUIRFS6535 AUIRFSL6535 HEXFET Power MOSFET Features Advanced Process Technology VDSS 300V Low On-Resistance RDS(on) typ. 148m 175C Operating Temperature Fast Switching max. 185m Repetitive Avalanche Allowed up to Tjmax ID 19A Lead-Free, RoHS Compliant Automotive Qualified * D D Description Specific

7.1. Size:277K international rectifier
auirfs8403 auirfsl8403.pdf

AUIRFS8403AUTOMOTIVE GRADEAUIRFSL8403HEXFET Power MOSFETFeaturesl Advanced Process TechnologyDVDSS 40Vl New Ultra Low On-Resistancel 175C Operating TemperatureRDS(on) typ. 2.6ml Fast Switchingl Repetitive Avalanche Allowed up to TjmaxG max. 3.3ml Lead-Free, RoHS Compliant Automotive Qualified *SID (Silicon Limited) 123ADescriptionSpecifically desi

7.2. Size:398K international rectifier
auirfb8409 auirfs8409 auirfsl8409.pdf

AUIRFB8409AUTOMOTIVE GRADE AUIRFS8409AUIRFSL8409FeaturesHEXFET Power MOSFETl Advanced Process TechnologyDl New Ultra Low On-Resistance VDSS 40Vl 175C Operating TemperatureRDS(on) (SMD) typ. 0.97ml Fast Switching max. 1.2ml Repetitive Avalanche Allowed up to TjmaxGl Lead-Free, RoHS Compliant ID (Silicon Limited) 409Al Automotive Qualified *ID (Package Li

7.3. Size:285K international rectifier
auirfsl4115.pdf

AUIRFS4115AUTOMOTIVE GRADEAUIRFSL4115HEXFET Power MOSFETFeaturesDVDSS150Vl Advanced Process Technologyl Ultra Low On-ResistanceRDS(on) typ.10.3ml 175C Operating Temperaturel Fast SwitchingG max. 12.1ml Repetitive Avalanche Allowed up to Tjmaxl Lead-Free, RoHS CompliantID99A l Automotive Qualified * SDDescriptionDSpecifically designed for A

7.4. Size:351K international rectifier
auirfs8405 auirfsl8405.pdf

AUIRFS8405AUTOMOTIVE GRADEAUIRFSL8405FeaturesHEXFET Power MOSFETl Advanced Process TechnologyDl New Ultra Low On-Resistance VDSS 40Vl 175C Operating TemperatureRDS(on) typ.1.9ml Fast Switching max. 2.3ml Repetitive Avalanche Allowed up to Tjmaxl Lead-Free, RoHS Compliant GID (Silicon Limited) 193Al Automotive Qualified *ID (Package Limited) 120A SDe

7.5. Size:340K international rectifier
auirfb8407 auirfs8407 auirfsl8407.pdf

AUIRFB8407AUTOMOTIVE GRADEAUIRFS8407AUIRFSL8407FeaturesHEXFET Power MOSFETl Advanced Process Technologyl New Ultra Low On-ResistanceVDSS 40VDl 175C Operating TemperatureRDS(on) typ. 1.4ml Fast Switching l Repetitive Avalanche Allowed up to Tjmax(SMD version) max. 1.8m l Lead-Free, RoHS CompliantG250AID (Silicon Limited) Automotive Qualified *S

7.6. Size:291K international rectifier
auirfs8408 auirfsl8408.pdf

AUIRFS8408AUTOMOTIVE GRADEAUIRFSL8408FeaturesHEXFET Power MOSFETl Advanced Process TechnologyVDSS 40Vl New Ultra Low On-Resistancel 175C Operating TemperatureRDS(on) typ. 1.3ml Fast Switching max. 1.6ml Repetitive Avalanche Allowed up to TjmaxID (Silicon Limited) 317Al Lead-Free, RoHS Compliantl Automotive Qualified *ID (Package Limited) 195A Descri

7.7. Size:277K infineon
auirfs8403 auirfsl8403.pdf

7.8. Size:716K infineon
auirfs3206 auirfsl3206.pdf

AUIRFS3206 AUTOMOTIVE GRADE AUIRFSL3206 HEXFET Power MOSFET Features VDSS 60V Advanced Process Technology RDS(on) typ. 2.4m Ultra Low On-Resistance max. 3.0m Enhanced dV/dT and dI/dT capability 175C Operating Temperature ID (Silicon Limited) 210A Fast Switching ID (Package Limited) 120A Repetitive Avalanche Allowed up to Tj

7.9. Size:398K infineon
auirfb8409 auirfs8409 auirfsl8409.pdf

7.10. Size:704K infineon
auirfs3207z auirfsl3207z.pdf

AUIRFS3207Z AUTOMOTIVE GRADE AUIRFSL3207Z HEXFET Power MOSFET Features VDSS 75V Advanced Process Technology RDS(on) typ. 3.3m Ultra Low On-Resistance max. 4.1m 175C Operating Temperature Fast Switching ID (Silicon Limited) 170A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 120A Lead-Free, RoHS Compliant

7.11. Size:289K infineon
auirfs4410z auirfsl4410z.pdf

PD - 96405AAUTOMOTIVE GRADEAUIRFS4410ZAUIRFSL4410ZFeaturesl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-Resistancel 175C Operating TemperatureDVDSS100Vl Fast Switchingl Repetitive Avalanche Allowed up to Tjmax RDS(on) typ.7.2ml Lead-Free, RoHS Compliant max. 9.0mGl Automotive Qualified *ID 97ASDescriptionSpecifically desig

7.12. Size:711K infineon
auirfs4010 auirfsl4010.pdf

AUIRFS4010 AUTOMOTIVE GRADE AUIRFSL4010 HEXFET Power MOSFET VDSS 100V Features Advanced Process Technology RDS(on) typ. 3.9m Ultra Low On-Resistance max. 4.7m 175C Operating Temperature Fast Switching ID 180A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D D Automotive Qualified * Description S S

7.13. Size:707K infineon
auirfs3307z auirfsl3307z.pdf

AUIRFS3307Z AUTOMOTIVE GRADE AUIRFSL3307Z HEXFET Power MOSFET Features VDSS 75V Advanced Process Technology RDS(on) typ. 4.6m Ultra Low On-Resistance max. 5.8m 175C Operating Temperature Fast Switching ID (Silicon Limited) 128A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 120A Lead-Free, RoHS Compliant

7.14. Size:351K infineon
auirfs8405 auirfsl8405.pdf

7.15. Size:711K infineon
auirfs3004 auirfsl3004.pdf

AUIRFS3004 AUTOMOTIVE GRADE AUIRFSL3004 HEXFET Power MOSFET Features VDSS 40V Advanced Process Technology RDS(on) typ. 1.4m Ultra Low On-Resistance max. 175C Operating Temperature 1.75m Fast Switching ID (Silicon Limited) 340A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 195A Lead-Free, RoHS Compliant

7.16. Size:709K infineon
auirfs3607 auirfsl3607.pdf

AUIRFS3607 AUTOMOTIVE GRADE AUIRFSL3607 HEXFET Power MOSFET Features VDSS 75V Advanced Process Technology RDS(on) typ. 7.34m Low On-Resistance 175C Operating Temperature max. 9.0m Fast Switching ID 80A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D D Description Specifi

7.17. Size:712K infineon
auirfs4310 auirfsl4310.pdf

AUIRFS4310 AUTOMOTIVE GRADE AUIRFSL4310 HEXFET Power MOSFET Features VDSS 100V Advanced Process Technology RDS(on) typ. 5.6m Ultra Low On-Resistance max. 7.0m 175C Operating Temperature Fast Switching ID (Silicon Limited) 130A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 75A Lead-Free, RoHS Compliant Au

7.18. Size:716K infineon
auirfs3107 auirfsl3107.pdf

AUIRFS3107 AUTOMOTIVE GRADE AUIRFSL3107 HEXFET Power MOSFET Features VDSS 75V Advanced Process Technology RDS(on) typ. 2.5m Ultra Low On-Resistance max. 3.0m Enhanced dV/dT and dI/dT capability 175C Operating Temperature ID (Silicon Limited) 230A Fast Switching ID (Package Limited) 195A Repetitive Avalanche Allowed up t

7.19. Size:340K infineon
auirfb8407 auirfs8407 auirfsl8407.pdf

7.20. Size:722K infineon
auirfs4115 auirfsl4115.pdf

AUIRFS4115 AUTOMOTIVE GRADE AUIRFSL4115 HEXFET Power MOSFET VDSS 150V Features Advanced Process Technology RDS(on) typ. 10.3m Ultra Low On-Resistance max. 12.1m 175C Operating Temperature Fast Switching ID 99A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D D Automotive Qualified * Description S S

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