AUIRFSL8403 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AUIRFSL8403
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 99 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 123 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
|VGSth|ⓘ - Tensión umbral entre puerta y fuente: 3.9 V
Qgⓘ - Carga de la puerta: 62 nC
trⓘ - Tiempo de subida: 77 nS
Cossⓘ - Capacitancia de salida: 475 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0033 Ohm
Encapsulados: TO-262
Búsqueda de reemplazo de AUIRFSL8403 MOSFET
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AUIRFSL8403 datasheet
auirfs8403 auirfsl8403.pdf
AUIRFS8403 AUTOMOTIVE GRADE AUIRFSL8403 HEXFET Power MOSFET Features l Advanced Process Technology D VDSS 40V l New Ultra Low On-Resistance l 175 C Operating Temperature RDS(on) typ. 2.6m l Fast Switching l Repetitive Avalanche Allowed up to Tjmax G max. 3.3m l Lead-Free, RoHS Compliant Automotive Qualified * S ID (Silicon Limited) 123A Description Specifically desi
auirfb8409 auirfs8409 auirfsl8409.pdf
AUIRFB8409 AUTOMOTIVE GRADE AUIRFS8409 AUIRFSL8409 Features HEXFET Power MOSFET l Advanced Process Technology D l New Ultra Low On-Resistance VDSS 40V l 175 C Operating Temperature RDS(on) (SMD) typ. 0.97m l Fast Switching max. 1.2m l Repetitive Avalanche Allowed up to Tjmax G l Lead-Free, RoHS Compliant ID (Silicon Limited) 409A l Automotive Qualified * ID (Package Li
auirfs8405 auirfsl8405.pdf
AUIRFS8405 AUTOMOTIVE GRADE AUIRFSL8405 Features HEXFET Power MOSFET l Advanced Process Technology D l New Ultra Low On-Resistance VDSS 40V l 175 C Operating Temperature RDS(on) typ.1.9m l Fast Switching max. 2.3m l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant G ID (Silicon Limited) 193A l Automotive Qualified * ID (Package Limited) 120A S De
auirfb8407 auirfs8407 auirfsl8407.pdf
AUIRFB8407 AUTOMOTIVE GRADE AUIRFS8407 AUIRFSL8407 Features HEXFET Power MOSFET l Advanced Process Technology l New Ultra Low On-Resistance VDSS 40V D l 175 C Operating Temperature RDS(on) typ. 1.4m l Fast Switching l Repetitive Avalanche Allowed up to Tjmax (SMD version) max. 1.8m l Lead-Free, RoHS Compliant G 250A ID (Silicon Limited) Automotive Qualified * S
Otros transistores... AUIRFS8407, AUIRFS8407-7P, AUIRFS8408, AUIRFS8408-7P, AUIRFS8409, AUIRFS8409-7P, AUIRFSL4115, AUIRFSL6535, 2N7002, AUIRFSL8405, AUIRFSL8407, AUIRFSL8408, AUIRFSL8409, AUIRFU4292, AUIRFU540Z, AUIRFU8401, AUIRFU8403
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