AUIRL3705ZSTRL Todos los transistores

 ..1. Size:378K  international rectifier
 auirl3705zstrl.pdf

PD - 96345 AUTOMOTIVE GRADE AUIRL3705Z AUIRL3705ZS AUIRL3705ZL Features HEXFET Power MOSFET l Logic Level V(BR)DSS 55V D l Advanced Process Technology l Ultra Low On-Resistance RDS(on) typ. 6.5m l 175 C Operating Temperature l Fast Switching max. 8.0m G l Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 86A l Lead-Free, RoHS Compliant S l Automotiv

 3.1. Size:759K  infineon
 auirl3705z auirl3705zs auirl3705zl.pdf

AUIRL3705Z AUIRL3705ZS AUTOMOTIVE GRADE AUIRL3705ZL HEXFET Power MOSFET Features VDSS 55V Logic Level Advanced Process Technology RDS(on) typ. 6.5m Ultra Low On-Resistance max. 8.0m 175 C Operating Temperature ID (Silicon Limited) 86A Fast Switching ID (Package Limited) 75A Repetitive Avalanche Allowed up to Tjmax Le

 5.1. Size:1024K  international rectifier
 auirl3705n.pdf

PD - 96352 AUTOMOTIVE GRADE AUIRL3705N Features HEXFET Power MOSFET Advanced Planar Technology D Logic-Level Gate Drive V(BR)DSS 55V Dynamic dV/dT Rating 175 C Operating Temperature RDS(on) max. 0.01 Fast Switching G Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax ID S 89A Lead-Free, RoHS Compliant Automotive Qualified * D Description S Sp

 9.1. Size:246K  international rectifier
 auirlr3410trl.pdf

PD - 97491 AUTOMOTIVE GRADE AUIRLR3410 Features Advanced Planar Technology HEXFET Power MOSFET Low On-Resistance Dynamic dV/dT Rating D V(BR)DSS 100V 175 C Operating Temperature Fast Switching RDS(on) max. 105m G Fully Avalanche Rated Repetitive Avalanche Allowed up to ID 17A S Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D Description Specifica

 9.2. Size:228K  international rectifier
 auirl7766m2tr.pdf

PD - 97648 AUIRL7766M2TR AUTOMOTIVE GRADE AUIRL7766M2TR1 Automotive DirectFET Power MOSFET V(BR)DSS 100V Advanced Process Technology Optimized for Automotive DC-DC and RDS(on) typ. 8.0m other Heavy Load Applications max. Logic Level Gate Drive 10m Exceptionally Small Footprint and Low Profile ID (Silicon Limited) 51A High Power Density Qg 44nC

 9.3. Size:228K  international rectifier
 auirlr3915.pdf

PD - 97743 AUTOMOTIVE GRADE AUIRLR3915 Features HEXFET Power MOSFET l Advanced Planar Technology l Logic-Level Gate Drive D V(BR)DSS 55V l Low On-Resistance RDS(on) typ. 12m l 175 C Operating Temperature l Fast Switching max 14m G l Fully Avalanche Rated ID (Silicon Limited) 61A l Repetitive Avalanche Allowed S up to Tjmax ID (Package Limited) 30A l Lead-Free, R

 9.4. Size:490K  international rectifier
 auirlr024n auirlu024n.pdf

AUIRLR024N AUTOMOTIVE GRADE AUIRLU024N Features HEXFET Power MOSFET Advanced Planar Technology Low On-Resistance VDSS 55V Logic-Level Gate Drive RDS(on) max. 0.065 Dynamic dv/dt Rating 175 C Operating Temperature ID 17A Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax D Lead-Free, RoHS Com

 9.5. Size:246K  international rectifier
 auirll2705.pdf

AUTOMOTIVE GRADE AUIRLL2705 Features HEXFET Power MOSFET l Advanced Planar Technology D l Low On-Resistance V(BR)DSS 55V l Logic Level Gate Drive RDS(on) max. l Dynamic dv/dt Rating 0.04 G l 150 C Operating Temperature S ID 3.8A l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant D l Automotive Qualified* S

 9.6. Size:264K  international rectifier
 auirlsl4030.pdf

PD - 96406B AUTOMOTIVE GRADE AUIRLS4030 Features AUIRLSL4030 l Optimized for Logic Level Drive HEXFET Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS 100V l 175 C Operating Temperature RDS(on) typ. l Fast Switching 3.4m l Repetitive Avalanche Allowed up to Tjmax G max. 4.3m l Lead-Free, RoHS Compliant l Automotive Qualified * ID 180A

 9.7. Size:242K  international rectifier
 auirli2505.pdf

PD - 97766 AUTOMOTIVE GRADE AUIRLI2505 Features l Advanced Planar Technology HEXFET Power MOSFET l Logic-Level Gate Drive l Low On-Resistance V(BR)DSS 55V l Dynamic dv/dt Rating l 175 C Operating Temperature RDS(on) max. 8.0m l Fast Switching l Fully Avalanche Rated ID 58A l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified* Des

 9.8. Size:215K  international rectifier
 auirlz44z.pdf

PD - 97682 AUTOMOTIVE GRADE AUIRLZ44Z Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D V(BR)DSS 55V 175 C Operating Temperature Fast Switching RDS(on) typ. 11m G Repetitive Avalanche Allowed up to max. 13.5m Tjmax S Lead-Free, RoHS Compliant ID 51A Automotive Qualified * Description D Specifically

 9.9. Size:276K  international rectifier
 auirlr2703tr.pdf

PD - 97620 AUTOMOTIVE GRADE AUIRLR2703 Advanced Planar Technology HEXFET Power MOSFET Logic-Level Gate Drive Low On-Resistance D Dynamic dV/dT Rating V(BR)DSS 30V 175 C Operating Temperature RDS(on) max. 45m Fast Switching G ID (Silicon Limited) Fully Avalanche Rated 23A Repetitive Avalanche Allowed up to Tjmax S ID (Package Limited) 20

 9.10. Size:198K  international rectifier
 auirll024n.pdf

AUTOMOTIVE GRADE AUIRLL024N Features HEXFET Power MOSFET Advanced Planar Technology D Low On-Resistance V(BR)DSS 55V Logic Level Gate Drive Dynamic dV/dT Rating RDS(on) max. 0.065 150 C Operating Temperature G Fast Switching Fully Avalanche Rated S ID 3.1A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D Description

 9.11. Size:238K  international rectifier
 auirlr2905tr.pdf

AUIRLR2905 AUTOMOTIVE GRADE AUIRLU2905 Advanced Planar Technology HEXFET Power MOSFET Logic-Level Gate Drive D V(BR)DSS Low On-Resistance 55V Dynamic dV/dT Rating RDS(on) max. 27m 175 C Operating Temperature G Fast Switching ID 42A S Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax D Lead-Free, RoHS Compliant Autom

 9.12. Size:230K  international rectifier
 auirl7736m2tr.pdf

PD - 97656 AUTOMOTIVE GRADE AUIRL7736M2TR AUIRL7736M2TR1 DirectFET Power MOSFET Logic Level V(BR)DSS 40V Advanced Process Technology Optimized for Automotive DC-DC, Motor Drive and RDS(on) typ. 2.2m other Heavy Load Applications max. 3.0m Exceptionally Small Footprint and Low Profile High Power Density ID (Silicon Limited) 112A Low Parasitic

 9.13. Size:548K  international rectifier
 auirll014n.pdf

AUTOMOTIVE GRADE AUIRLL014N HEXFET Power MOSFET Features VDSS Advanced Planar Technology 55V Low On-Resistance RDS(on) max. Logic Level Gate Drive 0.14 Dynamic dv/dt Rating ID 150 C Operating Temperature 2.0A Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax D Lead-Free, RoHS Compliant

 9.14. Size:260K  international rectifier
 auirlu024z.pdf

PD - 97753 AUTOMOTIVE GRADE AUIRLR024Z AUIRLU024Z Features HEXFET Power MOSFET Logic Level Advanced Process Technology D V(BR)DSS 55V Ultra Low On-Resistance RDS(on) typ. 46m 175 C Operating Temperature G Fast Switching max. 58m Repetitive Avalanche Allowed up to Tjmax S ID 16A Lead-Free, RoHS Compliant Automotive Qualified * D D

 9.15. Size:250K  international rectifier
 auirl1404l auirl1404s.pdf

PD - 96385A AUTOMOTIVE GRADE AUIRL1404S AUIRL1404L Features HEXFET Power MOSFET Advanced Planar Technology Logic-Level Gate Drive D Low On-Resistance V(BR)DSS 40V Dynamic dV/dT Rating 175 C Operating Temperature RDS(on) max. 4m Fast Switching G Fully Avalanche Rated ID 160A Repetitive Avalanche Allowed up to Tjmax S Lead-Free, RoHS Compliant Automotive Qualif

 9.16. Size:230K  international rectifier
 auirlr2908.pdf

PD - 97734 AUTOMOTIVE GRADE AUIRLR2908 Features HEXFET Power MOSFET l Advanced Planar Technology D V(BR)DSS l Logic-Level Gate Drive 80V l Low On-Resistance RDS(on) typ. 22.5m l 175 C Operating Temperature max 28m l Fast Switching G l Fully Avalanche Rated ID (Silicon Limited) 39A l Repetitive Avalanche Allowed S ID (Package Limited) 30A up to Tjmax l Lead-Free,

 9.17. Size:375K  international rectifier
 auirl1404zstrl.pdf

PD - 96331 AUTOMOTIVE GRADE AUIRL1404Z AUIRL1404ZS AUIRL1404ZL Features HEXFET Power MOSFET l Logic Level l Advanced Process Technology V(BR)DSS 40V D l Ultra Low On-Resistance l 175 C Operating Temperature RDS(on) typ. 2.5m l Fast Switching max. 3.1m l Repetitive Avalanche Allowed up to Tjmax G l Lead-Free, RoHS Compliant ID (Silicon Limited) 180A l Automotive Qu

 9.18. Size:273K  international rectifier
 auirlr2905ztr.pdf

PD - 97583 AUTOMOTIVE GRADE AUIRLR2905Z Features HEXFET Power MOSFET Logic Level Advanced Process Technology D V(BR)DSS 55V Ultra Low On-Resistance 175 C Operating Temperature RDS(on) max. 13.5m Fast Switching G ID (Silicon Limited) 60A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant S ID (Package Limited) 42A Automot

 9.19. Size:250K  international rectifier
 auirlb3036.pdf

AUTOMOTIVE GRADE AUIRLB3036 HEXFET Power MOSFET Features D l Advanced Process Technology VDSS 60V l Ultra Low On-Resistance RDS(on) typ. 1.9m l Logic Level Gate Drive max. 2.4m l Dynamic dv/dt Rating G ID (Silicon Limited) l 175 C Operating Temperature 270A l Fast Switching ID (Package Limited) S 195A l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compli

 9.20. Size:203K  international rectifier
 auirlr014n.pdf

AUTOMOTIVE GRADE PD - 97740 AUIRLR014N Advanced Planar Technology Logic-Level Gate Drive HEXFET Power MOSFET Low On-Resistance D Dynamic dV/dT Rating V(BR)DSS 55V 175 C Operating Temperature Fast Switching RDS(on) max. 0.14 G Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax ID 10A S Lead-Free, RoHS Compliant Auto

 9.21. Size:216K  international rectifier
 auirl7732s2tr1.pdf

PD - 97635A AUTOMOTIVE GRADE AUIRL7732S2TR AUIRL7732S2TR1 DirectFET Power MOSFET Logic Level V(BR)DSS 40V Advanced Process Technology Optimized for Automotive DC-DC, Motor Drive and RDS(on) typ. 5.0m other Heavy Load Applications max. 6.6m Exceptionally Small Footprint and Low Profile ID (Silicon Limited) High Power Density 58A Low Parasitic Pa

 9.22. Size:271K  international rectifier
 auirlz24nl auirlz24ns.pdf

AUIRLZ24NS AUTOMOTIVE GRADE AUIRLZ24NL Features HEXFET Power MOSFET D l Advanced Process Technology VDSS 55V l Logic Level Gate Drive l 175 C Operating Temperature RDS(on) max. 0.06 l Fast Switching G l Repetitive Avalanche Allowed up to Tjmax ID 18A l Lead-Free, RoHS Compliant S l Automotive Qualified * D D Description Specifically designed for Automotive application

 9.23. Size:211K  international rectifier
 auirl2203n.pdf

AUTOMOTIVE GRADE AUIRL2203N Features HEXFET Power MOSFET l Advanced Planar Technology D V(BR)DSS l Low On-Resistance 30V l Logic Level Gate Drive l Dynamic dV/dT Rating RDS(on) max. 7m l 175 C Operating Temperature G l Fast Switching ID (Silicon Limited) 116A l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax S ID (Package Limited) 75A l Lead-Free, RoHS C

 9.24. Size:287K  international rectifier
 auirlr3705ztr.pdf

PD - 97611 AUTOMOTIVE GRADE AUIRLR3705Z Features HEXFET Power MOSFET Logic Level Advanced Process Technology D V(BR)DSS 55V Ultra Low On-Resistance 175 C Operating Temperature RDS(on) max. 8.0m Fast Switching G ID (Silicon Limited) 89A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant S ID (Package Limited) 42A Automotiv

 9.25. Size:228K  international rectifier
 auirll024z.pdf

PD - 97762 AUTOMOTIVE GRADE AUIRLL024Z HEXFET Power MOSFET Features Advanced Process Technology D V(BR)DSS 55V Ultra Low On-Resistance 150 C Operating Temperature RDS(on) typ. 48m Fast Switching G max. 60m Repetitive Avalanche Allowed up to Tjmax S ID 5.0A Lead-Free, RoHS Compliant Automotive Qualified * Description D Specifically de

 9.26. Size:619K  international rectifier
 auirlr3105.pdf

PD - 97703A AUTOMOTIVE GRADE AUIRLR3105 Features HEXFET Power MOSFET l Advanced Planar Technology l Logic-Level Gate Drive D V(BR)DSS 55V Dynamic dV/dT Rating l Low On-Resistance RDS(on) typ. 30m l 175 C Operating Temperature G max 37m l Fast Switching l Fully Avalanche Rated S ID 25A l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant D l A

 9.27. Size:238K  international rectifier
 auirls3114z.pdf

PD - 96412 AUTOMOTIVE GRADE AUIRLS3114Z HEXFET Power MOSFET Features VDSS 40V D l Advanced Process Technology RDS(on) typ. l Ultra Low On-Resistance 3.8m l Enhanced dV/dT and dI/dT capability max. 4.9m l 175 C Operating Temperature G l Fast Switching ID (Silicon Limited) 122A l Repetitive Avalanche Allowed up to Tjmax S ID (Wirebond Limited) 56A l Lead-Free, RoHS

 9.28. Size:288K  international rectifier
 auirls3036.pdf

AUTOMOTIVE GRADE AUIRLS3036 HEXFET Power MOSFET Features Advanced Process Technology D VDSS 60V Ultra Low On-Resistance RDS(on) typ. 1.9m Logic Level Gate Drive Dynamic dv/dt Rating max. 2.4m G 175 C Operating Temperature ID (Silicon Limited) 270A Fast Switching ID (Package Limited) S 195A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant

 9.29. Size:312K  international rectifier
 auirlr024ntr.pdf

PD- 96348 AUTOMOTIVE GRADE AUIRLR024N AUIRLU024N Features Advanced Planar Technology HEXFET Power MOSFET Low On-Resistance D Logic-Level Gate Drive V(BR)DSS 55V Dynamic dV/dT Rating 175 C Operating Temperature RDS(on) max. 0.065 Fast Switching G Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax S ID 17A Lead-Free, RoHS Compliant Automotive Qual

 9.30. Size:636K  infineon
 auirlr3636.pdf

AUTOMOTIVE GRADE AUIRLR3636 Features HEXFET Power MOSFET Advanced Process Technology VDSS 60V Ultra Low On-Resistance RDS(on) typ. 5.4m Logic Level Gate Drive max. 6.8m 175 C Operating Temperature ID (Silicon Limited) 99A Fast Switching ID (Package Limited) 50A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS C

 9.31. Size:717K  infineon
 auirlr024z auirlu024z.pdf

AUIRLR024Z AUTOMOTIVE GRADE AUIRLU024Z Features HEXFET Power MOSFET Logic Level VDSS 55V Advanced Process Technology Ultra Low On-Resistance RDS(on) typ. 46m 175 C Operating Temperature Fast Switching max. 58m Repetitive Avalanche Allowed up to Tjmax ID 16A Lead-Free, RoHS Compliant Automotive Qualified * D D De

 9.32. Size:426K  infineon
 auirl7732s2tr.pdf

AUTOMOTIVE GRADE AUIRL7732S2TR Automotive DirectFET Power MOSFET Logic Level V(BR)DSS 40V Advanced Process Technology Optimized for Automotive DC-DC, Motor Drive and other Heavy RDS(on) typ. 5.0m Load Applications max. 6.6m Exceptionally Small Footprint and Low Profile ID (Silicon Limited) 58A High Power Density Qg (typical) 22nC Low

 9.33. Size:434K  infineon
 auirl7766m2tr.pdf

AUTOMOTIVE GRADE AUIRL7766M2TR Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 100V Optimized for Automotive DC-DC and other Heavy Load Applications RDS(on) typ. 8.0m Logic Level Gate Drive max. 10m Exceptionally Small Footprint and Low Profile ID (Silicon Limited) 51A High Power Density Qg (typical) 44nC L

 9.34. Size:688K  infineon
 auirls3036-7p.pdf

AUTOMOTIVE GRADE AUIRLS3036-7P HEXFET Power MOSFET Features Advanced Process Technology VDSS 60V Ultra Low On-Resistance RDS(on) typ. 1.5m Logic Level Gate Drive max. Dynamic dv/dt Rating 1.9m 175 C Operating Temperature ID (Silicon Limited) 300A Fast Switching ID (Package Limited) 240A Repetitive Avalanche Allowed up to T

 9.35. Size:448K  infineon
 auirlr2703.pdf

AUTOMOTIVE GRADE AUIRLR2703 Features HEXFET Power MOSFET Advanced Planar Technology Logic Level Gate Drive VDSS 30V Low On-Resistance Dynamic dV/dT Rating RDS(on) max. 45m 175 C Operating Temperature ID (Silicon Limited) 23A Fast Switching Fully Avalanche Rated ID (Package Limited) 20A Repetitive Avalanche Allowed up to Tjm

 9.36. Size:555K  infineon
 auirlr3410.pdf

AUTOMOTIVE GRADE AUIRLR3410 Features HEXFET Power MOSFET Advanced Planar Technology Low On-Resistance VDSS 100V Logic Level Gate Drive Dynamic dV/dT Rating RDS(on) max. 105m 175 C Operating Temperature Fast Switching ID 17A Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D

 9.37. Size:680K  infineon
 auirls3034.pdf

AUTOMOTIVE GRADE AUIRLS3034 HEXFET Power MOSFET Features Advanced Process Technology VDSS 40V Ultra Low On-Resistance RDS(on) typ. 1.4m Logic Level Gate Drive max. 1.7m Dynamic dv/dt Rating ID (Silicon Limited) 343A 175 C Operating Temperature Fast Switching ID (Package Limited) 195A Repetitive Avalanche Allowed up to Tjmax

 9.38. Size:714K  infineon
 auirlr3110z auirlu3110z.pdf

AUIRLR3110Z AUTOMOTIVE GRADE AUIRLU3110Z Features HEXFET Power MOSFET Advanced Process Technology VDSS 100V Ultra Low On-Resistance RDS(on) typ. 11m Logic Level Gate Drive max. 14m 175 C Operating Temperature ID (Silicon Limited) 63A Fast Switching ID (Package Limited) 42A Repetitive Avalanche Allowed up to Tjmax Lea

 9.39. Size:434K  infineon
 auirl7736m2tr.pdf

AUTOMOTIVE GRADE AUIRL7736M2TR Automotive DirectFET Power MOSFET Logic Level V(BR)DSS 40V Advanced Process Technology Optimized for Automotive Motor Drive, DC-DC and RDS(on) typ. 2.2m other Heavy Load Applications max. 3.0m Exceptionally Small Footprint and Low Profile ID (Silicon Limited) 112A High Power Density Qg (typical) 52nC

 9.40. Size:273K  infineon
 auirls8409-7p.pdf

AUIRLS8409-7P Features VDSS 40V Advanced Process Technology RDS(on) typ. 0.50m Logic Level Gate Drive max. Ultra Low On-Resistance 0.75m 175 C Operating Temperature ID (Silicon Limited) 500A Fast Switching ID (Package Limited) 240A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *

 9.41. Size:444K  infineon
 auirlr120n.pdf

AUTOMOTIVE GRADE AUIRLR120N Features HEXFET Power MOSFET Advanced Planar Technology Logic Level Gate Drive VDSS 100V Low On-Resistance Dynamic dV/dT Rating RDS(on) max. 0.185 175 C Operating Temperature Fast Switching Fully Avalanche Rated ID 10A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D

 9.42. Size:706K  infineon
 auirlr3114z auirlu3114z.pdf

AUIRLR3114Z AUTOMOTIVE GRADE AUIRLU3114Z Features HEXFET Power MOSFET Advanced Process Technology VDSS 40V Ultra Low On-Resistance Logic Level Gate Drive RDS(on) typ. 4.9m 175 C Operating Temperature max. 6.5m Fast Switching ID (Silicon Limited) 130A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 42A L

 9.43. Size:699K  infineon
 auirls3034-7p.pdf

AUTOMOTIVE GRADE AUIRLS3034-7P HEXFET Power MOSFET Features Advanced Process Technology VDSS 40V Ultra Low On-Resistance RDS(on) typ. 1.0m Logic Level Gate Drive max. Dynamic dv/dt Rating 1.4m 175 C Operating Temperature ID (Silicon Limited) 380A Fast Switching ID (Package Limited) 240A Repetitive Avalanche Allowed up to T

 9.44. Size:501K  infineon
 auirls4030 auirlsl4030.pdf

AUIRLS4030 AUTOMOTIVE GRADE AUIRLSL4030 Features HEXFET Power MOSFET Optimized for Logic Level Drive Advanced Process Technology D VDSS 100V Ultra Low On-Resistance RDS(on) typ. 3.4m Logic Level Gate Drive G 175 C Operating Temperature max 4.3m Fast Switching S Repetitive Avalanche Allowed up to Tjmax ID

 9.45. Size:670K  infineon
 auirlr3705z.pdf

AUTOMOTIVE GRADE AUIRLR3705Z Features HEXFET Power MOSFET Advanced Process Technology Logic-Level VDSS 55V Ultra Low On-Resistance RDS(on) max. 8.0m 175 C Operating Temperature Fast Switching ID (Silicon Limited) 89A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant ID (Package Limited) 42A Automotive Quali

 9.46. Size:754K  infineon
 auirl1404z auirl1404zs auirl1404zl.pdf

AUIRL1404Z AUIRL1404ZS AUTOMOTIVE GRADE AUIRL1404ZL HEXFET Power MOSFET Features VDSS 40V Logic Level Advanced Process Technology RDS(on) typ. 2.5m Ultra Low On-Resistance max. 3.1m 175 C Operating Temperature ID (Silicon Limited) 180A Fast Switching ID (Package Limited) 160A Repetitive Avalanche Allowed up to Tjmax

 9.47. Size:686K  infineon
 auirls4030-7p.pdf

AUTOMOTIVE GRADE AUIRLS4030-7P HEXFET Power MOSFET Features Optimized for Logic Level Drive VDSS 100V Advanced Process Technology RDS(on) typ. 3.2m Ultra Low On-Resistance Logic Level Gate Drive max. 3.9m 175 C Operating Temperature ID 190A Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compl

 9.48. Size:660K  infineon
 auirlr2905z.pdf

AUTOMOTIVE GRADE AUIRLR2905Z Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance VDSS 55V 175 C Operating Temperature Fast Switching RDS(on) max. 13.5m Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 60A Lead-Free, RoHS Compliant Automotive Qualified * ID (Package Limited) 42A D Desc

 9.49. Size:674K  infineon
 auirll024z.pdf

AUTOMOTIVE GRADE AUIRLL024Z Features HEXFET Power MOSFET Advanced Process Technology VDSS 55V Ultra Low On-Resistance RDS(on) typ. Logic Level Gate Drive 48m 150 C Operating Temperature max. 60m Fast Switching ID 5.0A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D Des

 9.50. Size:653K  infineon
 auirls3114z.pdf

AUTOMOTIVE GRADE AUIRLS3114Z HEXFET Power MOSFET Features Advanced Process Technology VDSS 40V Ultra Low On-Resistance RDS(on) typ. 3.8m Logic Level Gate Drive max. 4.9m Enhanced dv/dt and di/dt capability ID (Silicon Limited) 122A 175 C Operating Temperature Fast Switching ID (Package Limited) 56A Repetitive Avalanche Allow