AUIRLR3705ZTR Todos los transistores

 

AUIRLR3705ZTR MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AUIRLR3705ZTR

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 130 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 16 V

|Id|ⓘ - Corriente continua de drenaje: 42 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 150 nS

Cossⓘ - Capacitancia de salida: 420 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm

Encapsulados: TO-252

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AUIRLR3705ZTR datasheet

 ..1. Size:287K  international rectifier
 auirlr3705ztr.pdf pdf_icon

AUIRLR3705ZTR

PD - 97611 AUTOMOTIVE GRADE AUIRLR3705Z Features HEXFET Power MOSFET Logic Level Advanced Process Technology D V(BR)DSS 55V Ultra Low On-Resistance 175 C Operating Temperature RDS(on) max. 8.0m Fast Switching G ID (Silicon Limited) 89A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant S ID (Package Limited) 42A Automotiv

 3.1. Size:670K  infineon
 auirlr3705z.pdf pdf_icon

AUIRLR3705ZTR

AUTOMOTIVE GRADE AUIRLR3705Z Features HEXFET Power MOSFET Advanced Process Technology Logic-Level VDSS 55V Ultra Low On-Resistance RDS(on) max. 8.0m 175 C Operating Temperature Fast Switching ID (Silicon Limited) 89A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant ID (Package Limited) 42A Automotive Quali

 7.1. Size:246K  international rectifier
 auirlr3410trl.pdf pdf_icon

AUIRLR3705ZTR

PD - 97491 AUTOMOTIVE GRADE AUIRLR3410 Features Advanced Planar Technology HEXFET Power MOSFET Low On-Resistance Dynamic dV/dT Rating D V(BR)DSS 100V 175 C Operating Temperature Fast Switching RDS(on) max. 105m G Fully Avalanche Rated Repetitive Avalanche Allowed up to ID 17A S Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D Description Specifica

 7.2. Size:228K  international rectifier
 auirlr3915.pdf pdf_icon

AUIRLR3705ZTR

PD - 97743 AUTOMOTIVE GRADE AUIRLR3915 Features HEXFET Power MOSFET l Advanced Planar Technology l Logic-Level Gate Drive D V(BR)DSS 55V l Low On-Resistance RDS(on) typ. 12m l 175 C Operating Temperature l Fast Switching max 14m G l Fully Avalanche Rated ID (Silicon Limited) 61A l Repetitive Avalanche Allowed S up to Tjmax ID (Package Limited) 30A l Lead-Free, R

MOSTRAR MÁS

Otros transistores... AUIRL7736M2TR , AUIRL7766M2TR , AUIRLL024Z , AUIRLR024NTR , AUIRLR2703TR , AUIRLR2905TR , AUIRLR2905ZTR , AUIRLR3410TRL , AO4407 , AUIRLS3114Z , AUIRLSL4030 , AUIRLU024Z , AUIRLZ24NL , AUIRLZ24NS , AUXFS4409 , MTP15N15 , MTB20N20E .

 

 

 

 

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