AUIRLR3705ZTR Todos los transistores

 

AUIRLR3705ZTR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AUIRLR3705ZTR

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 130 W

Tensión drenaje-fuente (Vds): 55 V

Tensión compuerta-fuente (Vgs): 16 V

Corriente continua de drenaje (Id): 42 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 3 V

Carga de compuerta (Qg): 44 nC

Tiempo de elevación (tr): 150 nS

Conductancia de drenaje-sustrato (Cd): 420 pF

Resistencia drenaje-fuente RDS(on): 0.008 Ohm

Empaquetado / Estuche: TO-252

Búsqueda de reemplazo de MOSFET AUIRLR3705ZTR

 

AUIRLR3705ZTR Datasheet (PDF)

1.1. auirlr3705ztr.pdf Size:287K _international_rectifier

AUIRLR3705ZTR
AUIRLR3705ZTR

PD - 97611 AUTOMOTIVE GRADE AUIRLR3705Z Features HEXFET® Power MOSFET ● Logic Level ● Advanced Process Technology D V(BR)DSS 55V ● Ultra Low On-Resistance ● 175°C Operating Temperature RDS(on) max. 8.0mΩ ● Fast Switching G ID (Silicon Limited) 89A ● Repetitive Avalanche Allowed up to Tjmax ● Lead-Free, RoHS Compliant S ID (Package Limited) 42A ● Automotiv

3.1. auirlr3410trl.pdf Size:246K _international_rectifier

AUIRLR3705ZTR
AUIRLR3705ZTR

PD - 97491 AUTOMOTIVE GRADE AUIRLR3410 Features Advanced Planar Technology HEXFET® Power MOSFET Low On-Resistance Dynamic dV/dT Rating D V(BR)DSS 100V 175°C Operating Temperature Fast Switching RDS(on) max. 105mΩ G Fully Avalanche Rated Repetitive Avalanche Allowed up to ID 17A S Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D Description Specifica

 4.1. auirlr024ntr.pdf Size:312K _international_rectifier

AUIRLR3705ZTR
AUIRLR3705ZTR

PD- 96348 AUTOMOTIVE GRADE AUIRLR024N AUIRLU024N Features Advanced Planar Technology HEXFET® Power MOSFET Low On-Resistance D Logic-Level Gate Drive V(BR)DSS 55V Dynamic dV/dT Rating 175°C Operating Temperature RDS(on) max. 0.065Ω Fast Switching G Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax S ID 17A Lead-Free, RoHS Compliant Automotive Qual

4.2. auirlr2905ztr.pdf Size:273K _international_rectifier

AUIRLR3705ZTR
AUIRLR3705ZTR

PD - 97583 AUTOMOTIVE GRADE AUIRLR2905Z Features HEXFET® Power MOSFET ● Logic Level ● Advanced Process Technology D V(BR)DSS 55V ● Ultra Low On-Resistance ● 175°C Operating Temperature RDS(on) max. 13.5mΩ ● Fast Switching G ID (Silicon Limited) 60A ● Repetitive Avalanche Allowed up to Tjmax ● Lead-Free, RoHS Compliant S ID (Package Limited) 42A ● Automot

 4.3. auirlr2703tr.pdf Size:276K _international_rectifier

AUIRLR3705ZTR
AUIRLR3705ZTR

PD - 97620 AUTOMOTIVE GRADE AUIRLR2703 • Advanced Planar Technology HEXFET® Power MOSFET • Logic-Level Gate Drive • Low On-Resistance D • Dynamic dV/dT Rating V(BR)DSS 30V • 175°C Operating Temperature RDS(on) max. 45m Ω • Fast Switching G ID (Silicon Limited) • Fully Avalanche Rated 23A • Repetitive Avalanche Allowed up to Tjmax S ID (Package Limited) 20

4.4. auirlr2905tr.pdf Size:238K _international_rectifier

AUIRLR3705ZTR
AUIRLR3705ZTR

AUIRLR2905 AUTOMOTIVE GRADE AUIRLU2905 • Advanced Planar Technology HEXFET® Power MOSFET • Logic-Level Gate Drive D V(BR)DSS • Low On-Resistance 55V • Dynamic dV/dT Rating RDS(on) max. 27m • 175°C Operating Temperature G • Fast Switching ID 42A S • Fully Avalanche Rated • Repetitive Avalanche Allowed up to Tjmax D • Lead-Free, RoHS Compliant • Autom

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top

 


AUIRLR3705ZTR
  AUIRLR3705ZTR
  AUIRLR3705ZTR
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: 2N7405 | 2N7394U | 2N7394 | 2N7381 | 2N7380 | 2N7335E3 | 2N7335 | 2N7334 | 2N7297 | 2N7295 | 2N7293 | 2N7291 | 2N7281 | 2N7278 | 2N7275 |

 

 

 
Back to Top