AUIRLS3114Z MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AUIRLS3114Z
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 143 W
Tensión drenaje-fuente (Vds): 40 V
Tensión compuerta-fuente (Vgs): 20 V
Corriente continua de drenaje (Id): 56 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente Vgs(th): 2.5 V
Carga de compuerta (Qg): 35 nC
Tiempo de elevación (tr): 271 nS
Conductancia de drenaje-sustrato (Cd): 633 pF
Resistencia drenaje-fuente RDS(on): 0.0049 Ohm
Empaquetado / Estuche: TO-263
Búsqueda de reemplazo de MOSFET AUIRLS3114Z
AUIRLS3114Z Datasheet (PDF)
1.1. auirls3114z.pdf 
Size:238K _international_rectifier
PD - 96412 AUTOMOTIVE GRADE AUIRLS3114Z HEXFET® Power MOSFET Features VDSS 40V D l Advanced Process Technology RDS(on) typ. l Ultra Low On-Resistance 3.8m Ω l Enhanced dV/dT and dI/dT capability max. 4.9mΩ l 175°C Operating Temperature G l Fast Switching ID (Silicon Limited) 122A l Repetitive Avalanche Allowed up to Tjmax S ID (Wirebond Limited) 56A l Lead-Free, RoHS
4.1. auirlsl4030.pdf Size:264K _international_rectifier
PD - 96406B AUTOMOTIVE GRADE AUIRLS4030 Features AUIRLSL4030 l Optimized for Logic Level Drive HEXFET® Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS 100V l 175°C Operating Temperature RDS(on) typ. l Fast Switching 3.4mΩ l Repetitive Avalanche Allowed up to Tjmax G max. 4.3m Ω l Lead-Free, RoHS Compliant l Automotive Qualified * ID 180A
5.1. auirl7766m2tr.pdf Size:228K _international_rectifier
PD - 97648 AUIRL7766M2TR AUTOMOTIVE GRADE AUIRL7766M2TR1 Automotive DirectFET® Power MOSFET ‚ V(BR)DSS 100V • Advanced Process Technology • Optimized for Automotive DC-DC and RDS(on) typ. 8.0mΩ other Heavy Load Applications max. • Logic Level Gate Drive 10mΩ • Exceptionally Small Footprint and Low Profile ID (Silicon Limited) 51A • High Power Density Qg 44nC
5.2. auirlz24nl auirlz24ns.pdf Size:271K _international_rectifier
AUIRLZ24NS AUTOMOTIVE GRADE AUIRLZ24NL Features HEXFET® Power MOSFET D l Advanced Process Technology VDSS 55V l Logic Level Gate Drive l 175°C Operating Temperature RDS(on) max. 0.06 Ω l Fast Switching G l Repetitive Avalanche Allowed up to Tjmax ID 18A l Lead-Free, RoHS Compliant S l Automotive Qualified * D D Description Specifically designed for Automotive application
5.3. auirlr024ntr.pdf Size:312K _international_rectifier
PD- 96348 AUTOMOTIVE GRADE AUIRLR024N AUIRLU024N Features Advanced Planar Technology HEXFET® Power MOSFET Low On-Resistance D Logic-Level Gate Drive V(BR)DSS 55V Dynamic dV/dT Rating 175°C Operating Temperature RDS(on) max. 0.065Ω Fast Switching G Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax S ID 17A Lead-Free, RoHS Compliant Automotive Qual
5.4. auirl7732s2tr1.pdf Size:216K _international_rectifier
PD - 97635A AUTOMOTIVE GRADE AUIRL7732S2TR AUIRL7732S2TR1 DirectFET® Power MOSFET ‚ • Logic Level V(BR)DSS 40V • Advanced Process Technology • Optimized for Automotive DC-DC, Motor Drive and RDS(on) typ. 5.0mΩ other Heavy Load Applications max. 6.6mΩ • Exceptionally Small Footprint and Low Profile ID (Silicon Limited) • High Power Density 58A • Low Parasitic Pa
5.5. auirl7736m2tr.pdf Size:230K _international_rectifier
PD - 97656 AUTOMOTIVE GRADE AUIRL7736M2TR AUIRL7736M2TR1 DirectFET® Power MOSFET ‚ • Logic Level V(BR)DSS 40V • Advanced Process Technology • Optimized for Automotive DC-DC, Motor Drive and RDS(on) typ. 2.2mΩ other Heavy Load Applications max. 3.0mΩ • Exceptionally Small Footprint and Low Profile • High Power Density ID (Silicon Limited) 112A • Low Parasitic
5.6. auirlu024z.pdf Size:260K _international_rectifier
PD - 97753 AUTOMOTIVE GRADE AUIRLR024Z AUIRLU024Z Features HEXFET® Power MOSFET ● Logic Level ● Advanced Process Technology D V(BR)DSS 55V ● Ultra Low On-Resistance RDS(on) typ. 46m ● 175°C Operating Temperature G ● Fast Switching max. 58m ● Repetitive Avalanche Allowed up to Tjmax S ID 16A ● Lead-Free, RoHS Compliant ● Automotive Qualified * D D
5.7. auirl3705zstrl.pdf Size:378K _international_rectifier
PD - 96345 AUTOMOTIVE GRADE AUIRL3705Z AUIRL3705ZS AUIRL3705ZL Features HEXFET® Power MOSFET l Logic Level V(BR)DSS 55V D l Advanced Process Technology l Ultra Low On-Resistance RDS(on) typ. 6.5mΩ l 175°C Operating Temperature l Fast Switching max. 8.0mΩ G l Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 86A l Lead-Free, RoHS Compliant S l Automotiv
5.8. auirll024z.pdf Size:228K _international_rectifier
PD - 97762 AUTOMOTIVE GRADE AUIRLL024Z HEXFET® Power MOSFET Features ● Advanced Process Technology D V(BR)DSS 55V ● Ultra Low On-Resistance ● 150°C Operating Temperature RDS(on) typ. 48m ● Fast Switching G max. 60m ● Repetitive Avalanche Allowed up to Tjmax S ID 5.0A ● Lead-Free, RoHS Compliant ● Automotive Qualified * Description D Specifically de
5.9. auirlr3410trl.pdf Size:246K _international_rectifier
PD - 97491 AUTOMOTIVE GRADE AUIRLR3410 Features Advanced Planar Technology HEXFET® Power MOSFET Low On-Resistance Dynamic dV/dT Rating D V(BR)DSS 100V 175°C Operating Temperature Fast Switching RDS(on) max. 105mΩ G Fully Avalanche Rated Repetitive Avalanche Allowed up to ID 17A S Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D Description Specifica
5.10. auirlr2905ztr.pdf Size:273K _international_rectifier
PD - 97583 AUTOMOTIVE GRADE AUIRLR2905Z Features HEXFET® Power MOSFET ● Logic Level ● Advanced Process Technology D V(BR)DSS 55V ● Ultra Low On-Resistance ● 175°C Operating Temperature RDS(on) max. 13.5mΩ ● Fast Switching G ID (Silicon Limited) 60A ● Repetitive Avalanche Allowed up to Tjmax ● Lead-Free, RoHS Compliant S ID (Package Limited) 42A ● Automot
5.11. auirl1404zstrl.pdf Size:375K _international_rectifier
PD - 96331 AUTOMOTIVE GRADE AUIRL1404Z AUIRL1404ZS AUIRL1404ZL Features HEXFET® Power MOSFET l Logic Level l Advanced Process Technology V(BR)DSS 40V D l Ultra Low On-Resistance l 175°C Operating Temperature RDS(on) typ. 2.5mΩ l Fast Switching max. 3.1mΩ l Repetitive Avalanche Allowed up to Tjmax G l Lead-Free, RoHS Compliant ID (Silicon Limited) 180A l Automotive Qu
5.12. auirlr2703tr.pdf Size:276K _international_rectifier
PD - 97620 AUTOMOTIVE GRADE AUIRLR2703 • Advanced Planar Technology HEXFET® Power MOSFET • Logic-Level Gate Drive • Low On-Resistance D • Dynamic dV/dT Rating V(BR)DSS 30V • 175°C Operating Temperature RDS(on) max. 45m Ω • Fast Switching G ID (Silicon Limited) • Fully Avalanche Rated 23A • Repetitive Avalanche Allowed up to Tjmax S ID (Package Limited) 20
5.13. auirlr2905tr.pdf Size:238K _international_rectifier
AUIRLR2905 AUTOMOTIVE GRADE AUIRLU2905 • Advanced Planar Technology HEXFET® Power MOSFET • Logic-Level Gate Drive D V(BR)DSS • Low On-Resistance 55V • Dynamic dV/dT Rating RDS(on) max. 27m • 175°C Operating Temperature G • Fast Switching ID 42A S • Fully Avalanche Rated • Repetitive Avalanche Allowed up to Tjmax D • Lead-Free, RoHS Compliant • Autom
5.14. auirlr3705ztr.pdf Size:287K _international_rectifier
PD - 97611 AUTOMOTIVE GRADE AUIRLR3705Z Features HEXFET® Power MOSFET ● Logic Level ● Advanced Process Technology D V(BR)DSS 55V ● Ultra Low On-Resistance ● 175°C Operating Temperature RDS(on) max. 8.0mΩ ● Fast Switching G ID (Silicon Limited) 89A ● Repetitive Avalanche Allowed up to Tjmax ● Lead-Free, RoHS Compliant S ID (Package Limited) 42A ● Automotiv
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