AUIRLS3114Z Todos los transistores

 

AUIRLS3114Z MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AUIRLS3114Z
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 143 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 56 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 271 nS
   Cossⓘ - Capacitancia de salida: 633 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0049 Ohm
   Paquete / Cubierta: TO-263
 

 Búsqueda de reemplazo de AUIRLS3114Z MOSFET

   - Selección ⓘ de transistores por parámetros

 

AUIRLS3114Z Datasheet (PDF)

 ..1. Size:238K  international rectifier
 auirls3114z.pdf pdf_icon

AUIRLS3114Z

PD - 96412AUTOMOTIVE GRADEAUIRLS3114ZHEXFET Power MOSFETFeaturesVDSS40VDl Advanced Process TechnologyRDS(on) typ.l Ultra Low On-Resistance 3.8ml Enhanced dV/dT and dI/dT capability max. 4.9ml 175C Operating TemperatureGl Fast Switching ID (Silicon Limited) 122Al Repetitive Avalanche Allowed up to TjmaxSID (Wirebond Limited)56A l Lead-Free, RoHS

 ..2. Size:653K  infineon
 auirls3114z.pdf pdf_icon

AUIRLS3114Z

AUTOMOTIVE GRADE AUIRLS3114Z HEXFET Power MOSFET Features Advanced Process Technology VDSS 40V Ultra Low On-Resistance RDS(on) typ. 3.8m Logic Level Gate Drive max. 4.9m Enhanced dv/dt and di/dt capability ID (Silicon Limited) 122A 175C Operating Temperature Fast Switching ID (Package Limited) 56A Repetitive Avalanche Allow

 7.1. Size:288K  international rectifier
 auirls3036.pdf pdf_icon

AUIRLS3114Z

AUTOMOTIVE GRADEAUIRLS3036HEXFET Power MOSFETFeatures Advanced Process TechnologyDVDSS 60V Ultra Low On-ResistanceRDS(on) typ.1.9m Logic Level Gate Drive Dynamic dv/dt Ratingmax. 2.4mG 175C Operating TemperatureID (Silicon Limited) 270A Fast SwitchingID (Package Limited)S 195A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant

 7.2. Size:688K  infineon
 auirls3036-7p.pdf pdf_icon

AUIRLS3114Z

AUTOMOTIVE GRADE AUIRLS3036-7P HEXFET Power MOSFET Features Advanced Process Technology VDSS 60V Ultra Low On-Resistance RDS(on) typ. 1.5m Logic Level Gate Drive max. Dynamic dv/dt Rating 1.9m 175C Operating Temperature ID (Silicon Limited) 300A Fast Switching ID (Package Limited) 240A Repetitive Avalanche Allowed up to T

MOSTRAR MÁS

Otros transistores... AUIRL7766M2TR , AUIRLL024Z , AUIRLR024NTR , AUIRLR2703TR , AUIRLR2905TR , AUIRLR2905ZTR , AUIRLR3410TRL , AUIRLR3705ZTR , 18N50 , AUIRLSL4030 , AUIRLU024Z , AUIRLZ24NL , AUIRLZ24NS , AUXFS4409 , MTP15N15 , MTB20N20E , MTB33N10E .

History: IXFH70N30Q3

 

 
Back to Top

 


 
.