AUIRLU024Z Todos los transistores

 

AUIRLU024Z MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AUIRLU024Z
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 35 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
   |Id|ⓘ - Corriente continua de drenaje: 16 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 43 nS
   Cossⓘ - Capacitancia de salida: 62 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.058 Ohm
   Paquete / Cubierta: TO-251
 

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AUIRLU024Z datasheet

 ..1. Size:260K  international rectifier
 auirlu024z.pdf pdf_icon

AUIRLU024Z

PD - 97753 AUTOMOTIVE GRADE AUIRLR024Z AUIRLU024Z Features HEXFET Power MOSFET Logic Level Advanced Process Technology D V(BR)DSS 55V Ultra Low On-Resistance RDS(on) typ. 46m 175 C Operating Temperature G Fast Switching max. 58m Repetitive Avalanche Allowed up to Tjmax S ID 16A Lead-Free, RoHS Compliant Automotive Qualified * D D

 ..2. Size:717K  infineon
 auirlr024z auirlu024z.pdf pdf_icon

AUIRLU024Z

AUIRLR024Z AUTOMOTIVE GRADE AUIRLU024Z Features HEXFET Power MOSFET Logic Level VDSS 55V Advanced Process Technology Ultra Low On-Resistance RDS(on) typ. 46m 175 C Operating Temperature Fast Switching max. 58m Repetitive Avalanche Allowed up to Tjmax ID 16A Lead-Free, RoHS Compliant Automotive Qualified * D D De

 5.1. Size:490K  international rectifier
 auirlr024n auirlu024n.pdf pdf_icon

AUIRLU024Z

AUIRLR024N AUTOMOTIVE GRADE AUIRLU024N Features HEXFET Power MOSFET Advanced Planar Technology Low On-Resistance VDSS 55V Logic-Level Gate Drive RDS(on) max. 0.065 Dynamic dv/dt Rating 175 C Operating Temperature ID 17A Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax D Lead-Free, RoHS Com

 8.1. Size:714K  infineon
 auirlr3110z auirlu3110z.pdf pdf_icon

AUIRLU024Z

AUIRLR3110Z AUTOMOTIVE GRADE AUIRLU3110Z Features HEXFET Power MOSFET Advanced Process Technology VDSS 100V Ultra Low On-Resistance RDS(on) typ. 11m Logic Level Gate Drive max. 14m 175 C Operating Temperature ID (Silicon Limited) 63A Fast Switching ID (Package Limited) 42A Repetitive Avalanche Allowed up to Tjmax Lea

MOSTRAR MÁS

Otros transistores... AUIRLR024NTR , AUIRLR2703TR , AUIRLR2905TR , AUIRLR2905ZTR , AUIRLR3410TRL , AUIRLR3705ZTR , AUIRLS3114Z , AUIRLSL4030 , IRFP250 , AUIRLZ24NL , AUIRLZ24NS , AUXFS4409 , MTP15N15 , MTB20N20E , MTB33N10E , FDP2D3N10C , FDP4D5N10C .

History: AOTF20S60

 

 

 


 
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