IPB033N10N5LF Todos los transistores

 

IPB033N10N5LF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IPB033N10N5LF
   Código: 033N10LF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 179 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 120 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4.1 V
   Qgⓘ - Carga de la puerta: 102 nC
   trⓘ - Tiempo de subida: 32 nS
   Cossⓘ - Capacitancia de salida: 1100 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0033 Ohm
   Paquete / Cubierta: D2PAK TO-263

 Búsqueda de reemplazo de MOSFET IPB033N10N5LF

 

IPB033N10N5LF Datasheet (PDF)

 ..1. Size:1003K  infineon
ipb033n10n5lf.pdf

IPB033N10N5LF
IPB033N10N5LF

IPB033N10N5LFMOSFETDPAKOptiMOSTM 5 Linear FET, 100 VFeatures Ideal for hot-swap and e-fuse applications Very low on-resistance RDS(on) Wide safe operating area SOA N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Qualified according to JEDEC1) for target applications Halogen-free according to IEC61249-2-21Drain

 ..2. Size:258K  inchange semiconductor
ipb033n10n5lf.pdf

IPB033N10N5LF
IPB033N10N5LF

Isc N-Channel MOSFET Transistor IPB033N10N5LFFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source

 9.1. Size:475K  infineon
ipb034n06l3g ipi037n06l3g ipp037n06l3g.pdf

IPB033N10N5LF
IPB033N10N5LF

Type IPB034N06L3 G IPI037N06L3 GIPP037N06L3 GProduct SummaryOptiMOS3 Power-TransistorV 60 VDSFeaturesR 3.4mDS(on),max (SMD) Ideal for high frequency switching and sync. rec.I 90 AD Optimized technology for DC/DC convertersprevious engineering Excellent gate charge x R product (FOM)DS(on)sample codes: Very low on-resistance RDS(on)IPP04xN06

 9.2. Size:674K  infineon
ipb034n06n3.pdf

IPB033N10N5LF
IPB033N10N5LF

pe IPB034N06N3 G 3 Power-TransistorProduct SummaryFeaturesV D P 6?A BH>3 A53C96931C9?> =?C?A 4A9E5B 1>4 43 43 ,&),R 4 m D n) m xP G35

 9.3. Size:696K  infineon
ipb030n08n3.pdf

IPB033N10N5LF
IPB033N10N5LF

IPB030N08N3 G 3 Power-TransistorProduct SummaryFeaturesV D Q #4513I CG9D389>7 1>4 CI>3 B53 R m D n) m xQ ( @D9=9J54 D538>?CI 1 DQ H35

 9.4. Size:264K  infineon
ipp039n04lg ipb039n04lg.pdf

IPB033N10N5LF
IPB033N10N5LF

Type IPP039N04L GIPB039N04L GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 40 VDS Fast switching MOSFET for SMPSR 3.9mDS(on),max Optimized technology for DC/DC convertersI 80 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on

 9.5. Size:484K  infineon
ipb037n06n3g ipi040n06n3g ipp040n06n3g.pdf

IPB033N10N5LF
IPB033N10N5LF

Type IPB037N06N3 G IPI040N06N3 GIPP040N06N3 GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 60 VDSR 3.7 for sync. rectification, drives and dc/dc SMPS mDS(on),max (SMD)I 90 A Excellent gate charge x R product (FOM) DDS(on)previous engineering Very low on-resistance RDS(on)sample codes: N-channel, normal level IPP04xN06NIPI04xN06N Ava

 9.6. Size:1018K  infineon
ipp037n08n3ge8181 ipp037n08n3g ipi037n08n3g ipb035n08n3g.pdf

IPB033N10N5LF
IPB033N10N5LF

IPP037N08N3 G IPI037N08N3 GIPB035N08N3 G 3 Power-TransistorProduct SummaryFeaturesV D Q #4513I CG9D389>7 1>4 CI>3 B53 R m D n) m xQ ( @D9=9J54 D538>?F5BD5BCI 1 DQ H3579>55B9>7 3?45 Q .5BI B5C9CD1>35 +D n)#) ' ' !Q ' 381>>5?B=1

 9.7. Size:508K  infineon
ipb038n12n3-g ipi041n12n3-g ipp041n12n3-g.pdf

IPB033N10N5LF
IPB033N10N5LF

IPI041N12N3 GIPP041N12N3 G IPB038N12N3 GOptiMOSTM3 Power-TransistorProduct SummaryFeaturesV 120 VDS N-channel, normal levelR 3.8mDS(on),max (TO-263) Excellent gate charge x R product (FOM)DS(on)I 120 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant, halogen free Qualified according to

 9.8. Size:534K  infineon
ipb031ne7n3 ipb031ne7n3g.pdf

IPB033N10N5LF
IPB033N10N5LF

IPB031NE7N3 GTM 3 Power-TransistorProduct SummaryFeaturesV 7 D Q ( @D9=9J54 D538>??EC B53D96931D9?>R 1 m D n) m xQ #4513I CG9D389>7 1>4 3?>F5BD5BCI 1 DQ H35

 9.9. Size:344K  infineon
ipb039n04l-g ipp039n04l-g.pdf

IPB033N10N5LF
IPB033N10N5LF

Type IPP039N04L GIPB039N04L GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 40 VDS Fast switching MOSFET for SMPSR 3.9mDS(on),max Optimized technology for DC/DC convertersI 80 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on

 9.10. Size:664K  infineon
ipb039n10n3ge8187.pdf

IPB033N10N5LF
IPB033N10N5LF

IPB039N10N3 G 3 Power-TransistorProduct SummaryFeaturesV 1 D P ' 381>>5?A=1

 9.11. Size:279K  infineon
ipb03n03lbg.pdf

IPB033N10N5LF
IPB033N10N5LF

IPB03N03LBOptiMOS2 Power-TransistorProduct SummaryFeaturesV 30 VDS Ideal for high-frequency dc/dc convertersR 2.8mDS(on),max Qualified according to JEDEC1) for target applicationI 80 AD N-channel - Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)PG-TO220-3-1PG-TO263-3 Superior thermal resistan

 9.12. Size:633K  infineon
ipb036n12n3g.pdf

IPB033N10N5LF
IPB033N10N5LF

IPB036N12N3 G 3 Power-TransistorProduct SummaryFeaturesV 1 D Q #4513I CG9D389>7 1>4 3?>F5BD5BCR m D n) m xQ H35

 9.13. Size:615K  infineon
ipb039n04l .pdf

IPB033N10N5LF
IPB033N10N5LF

pe %% # ! % # ! % (>.;?6?@%>EFeatures 4 D S 4EF EI

 9.14. Size:1124K  infineon
ipb031n08n5.pdf

IPB033N10N5LF
IPB033N10N5LF

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOS5 Power-Transistor, 80 VIPB031N08N5Data SheetRev. 2.0FinalPower Management & MultimarketOptiMOS5 Power-Transistor, 80 VIPB031N08N5DPAK1 DescriptionFeatures Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM)DS(on) Very low on-resistance R

 9.15. Size:725K  infineon
ipp034n03lg ipb034n03lg.pdf

IPB033N10N5LF
IPB033N10N5LF

Type IPP034N03L GIPB034N03L G 3 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 3.4mWDS(on),max Optimized technology for DC/DC convertersI 80 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)

 9.16. Size:686K  infineon
ipb039n04l.pdf

IPB033N10N5LF
IPB033N10N5LF

Type IPP039N04L GIPB039N04L G 3 Power-TransistorProduct SummaryFeaturesV 40 VDS Fast switching MOSFET for SMPSR 3.9mWDS(on),max Optimized technology for DC/DC convertersI 80 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)

 9.17. Size:1096K  infineon
ipb032n10n5.pdf

IPB033N10N5LF
IPB033N10N5LF

IPB032N10N5MOSFETD-PAK 7pinOptiMOS 5 Power-Transistor, 100 VFeatures Ideal for high frequency switching and sync. rec.tab Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) N-channel, normal level1 100% avalanche tested Pb-free plating; RoHS compliant7 Qualified according to JEDEC1) for target applications H

 9.18. Size:873K  infineon
ipi041n12n3g ipp041n12n3g ipb038n12n3g.pdf

IPB033N10N5LF
IPB033N10N5LF

IPI041N12N3 GIPP041N12N3 G IPB038N12N3 GOptiMOSTM3 Power-TransistorProduct Summary FeaturesVDS 120 V N-channel, normal levelRDS(on),max (TO-263) 3.8 mW Excellent gate charge x R product (FOM)DS(on)ID 120 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant, halogen free Qualified according to JE

 9.19. Size:494K  infineon
ipp037n08n3g ipi037n08n3g ipb035n08n3g.pdf

IPB033N10N5LF
IPB033N10N5LF

IPP037N08N3 G IPI037N08N3 GIPB035N08N3 GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 80 VDS Ideal for high frequency switching and sync. rec.R 3.5mDS(on),max Optimized technology for DC/DC convertersI 100 AD Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) N-channel, normal level 100% avalanche tested

 9.20. Size:666K  infineon
ipb039n10n3g ipb039n10n3g3.pdf

IPB033N10N5LF
IPB033N10N5LF

IPB039N10N3 G 3 Power-TransistorProduct SummaryFeaturesV 1 D P ' 381>>5?A=1

 9.21. Size:723K  infineon
ipb034n03l ipp034n03l.pdf

IPB033N10N5LF
IPB033N10N5LF

Type IPP034N03L GIPB034N03L G 3 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 3.4mWDS(on),max Optimized technology for DC/DC convertersI 80 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)

 9.22. Size:258K  inchange semiconductor
ipb038n12n3g.pdf

IPB033N10N5LF
IPB033N10N5LF

Isc N-Channel MOSFET Transistor IPB038N12N3GFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source

 9.23. Size:228K  inchange semiconductor
ipb035n08n3g.pdf

IPB033N10N5LF
IPB033N10N5LF

Isc N-Channel MOSFET Transistor IPB035N08N3GFEATURESWith TO-263( DPAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)

 9.24. Size:243K  inchange semiconductor
ipb034n03l .pdf

IPB033N10N5LF
IPB033N10N5LF

isc N-Channel MOSFET Transistor IPB034N03LDESCRIPTIONDrain Current :I = 80A@ T =25D CDrain Source Voltage: V = 30V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS .Designed for high current, high speed switching, switchmode power supplies.ABSOLUTE MAXIMUM RATINGS(T =25)CSY

 9.25. Size:258K  inchange semiconductor
ipb037n06n3.pdf

IPB033N10N5LF
IPB033N10N5LF

Isc N-Channel MOSFET Transistor IPB037N06N3FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V

 9.26. Size:258K  inchange semiconductor
ipb034n06l3g.pdf

IPB033N10N5LF
IPB033N10N5LF

Isc N-Channel MOSFET Transistor IPB034N06L3GFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source

 9.27. Size:258K  inchange semiconductor
ipb031n08n5.pdf

IPB033N10N5LF
IPB033N10N5LF

Isc N-Channel MOSFET Transistor IPB031N08N5FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V

 9.28. Size:219K  inchange semiconductor
ipb039n04l.pdf

IPB033N10N5LF
IPB033N10N5LF

isc N-Channel MOSFET Transistor IPB039N04LFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)a

 9.29. Size:243K  inchange semiconductor
ipb034n03l.pdf

IPB033N10N5LF
IPB033N10N5LF

isc N-Channel MOSFET Transistor IPB034N03LDESCRIPTIONDrain Current :I = 80A@ T =25D CDrain Source Voltage: V = 30V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS .Designed for high current, high speed switching, switchmode power supplies.ABSOLUTE MAXIMUM RATINGS(T =25)CSY

 9.30. Size:252K  inchange semiconductor
ipb031ne7n3.pdf

IPB033N10N5LF
IPB033N10N5LF

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPB031NE7N3FEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXI

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