IPB05CN10N Todos los transistores

 

IPB05CN10N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IPB05CN10N
   Código: 05CN10N
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 300 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 100 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 136 nC
   trⓘ - Tiempo de subida: 42 nS
   Cossⓘ - Capacitancia de salida: 1370 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0051 Ohm
   Paquete / Cubierta: D2PAK TO-263

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IPB05CN10N Datasheet (PDF)

 ..1. Size:257K  inchange semiconductor
ipb05cn10n.pdf

IPB05CN10N
IPB05CN10N

Isc N-Channel MOSFET Transistor IPB05CN10NFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vo

 0.1. Size:781K  infineon
ipp05cn10n ipp05cn10n ipb05cn10n-g ipi05cn10n-g.pdf

IPB05CN10N
IPB05CN10N

IPB05CN10N G IPI05CN10N GIPP05CN10N G 2 Power-TransistorProduct SummaryFeaturesV 100 VDSR ( 492??6= ?@C>2= =6G6=R 5.1 m - @? >2I .) R I46==6?E 82E6 492C86 I R AC@5F4E !) ' DS(on)I 100 ADR /6CJ =@H @? C6D:DE2?46 RDS(on)R U @A6C2E:?8 E6>A6C2EFC6R *3 7C66 =625 A=2E:?8 , @#- 4@>A=:2?E1)R + F2=:7:65 244@C5:?8 E@ % 7@C E2C86E 2AA=:42E:@?R $562= 7@C 9:89 7

 9.1. Size:322K  infineon
ipp055n03l ipp055n03lg ipb055n03lg.pdf

IPB05CN10N
IPB05CN10N

Type IPP055N03L GIPB055N03L GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 5.5mDS(on),max Optimized technology for DC/DC convertersI 50 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on

 9.2. Size:727K  infineon
ipb055n03l.pdf

IPB05CN10N
IPB05CN10N

Type IPP055N03L GIPB055N03L G 3 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 5.5mWDS(on),max Optimized technology for DC/DC convertersI 50 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)

 9.3. Size:683K  infineon
ipb049n06l3g ipp052n06l3g ipp052n06l3 ipb049n06l3 ipp052n06l3 ipb052n06l3.pdf

IPB05CN10N
IPB05CN10N

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 9.4. Size:570K  infineon
ipb057n06n.pdf

IPB05CN10N
IPB05CN10N

TypeIPB057N06NOptiMOSTM Power-TransistorProduct Summary FeaturesVDS 60 V Optimized for synchronous rectificationRDS(on),max 5.7 mW 100% avalanche testedID 45 A Superior thermal resistanceQoss 32 nC N-channel, normal levelQg(0V..10V) 27 nC Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Haloge

 9.5. Size:280K  infineon
ipb05n03lbg.pdf

IPB05CN10N
IPB05CN10N

IPB05N03LBOptiMOS2 Power-TransistorProduct SummaryFeaturesV 30 VDS Ideal for high-frequency dc/dc convertersR 5.0mDS(on),max Qualified according to JEDEC1) for target applicationI 80 AD N-channel - Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)PG-TO220-3-1PG-TO263-3 Superior thermal resistan

 9.6. Size:691K  infineon
ipp057n06n3 ipb054n06n3 ipp057n06n3 ipb057n06n3.pdf

IPB05CN10N
IPB05CN10N

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 9.7. Size:526K  infineon
ipp057n08n3-g ipi057n08n3-g ipb054n08n3-g.pdf

IPB05CN10N
IPB05CN10N

IPP057N08N3 G IPI057N08N3 GIPB054N08N3 GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 80 VDS N-channel, normal levelR 5.4mDS(on),max (SMD) Excellent gate charge x R product (FOM)DS(on)I 80 AD Very low on-resistance RDS(on)previous engineering 175 C operating temperaturesample codes:IPP06CN08N Pb-free lead plating; RoHS complia

 9.8. Size:731K  infineon
ipb050n06ng ipp050n06ng.pdf

IPB05CN10N
IPB05CN10N

IPP050N06N G IPB050N06N G Power-TransistorProduct SummaryFeaturesV D O >@ 50AB AE8B278=6 2>=D4@B4@A 0=3 AG=2 @42B85820B8>=R 4 7 m + >= =O ' 270==4; 4=70=24@?4@0B8=6 B4"+ 2>64= 5@44 022>@38=6 B> # Type #)) ' ' #) ' ' Package O O Mar

 9.9. Size:1022K  infineon
ipp057n08n3g ipi057n08n3g ipb054n08n3g.pdf

IPB05CN10N
IPB05CN10N

IPP057N08N3 G IPI057N08N3 GIPB054N08N3 G 3 Power-TransistorProduct SummaryFeaturesV 80 VDSQ ' 381>>5?B=1

 9.10. Size:689K  infineon
ipb054n06n3g ipp057n06n3g.pdf

IPB05CN10N
IPB05CN10N

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 9.11. Size:503K  infineon
ipb051ne8n-g ipi05cne8n-g ipp054ne8n-g.pdf

IPB05CN10N
IPB05CN10N

IPB051NE8N G IPI05CNE8N GIPP054NE8N GOptiMOS2 Power-TransistorProduct SummaryFeaturesV 85 VDS N-channel, normal levelR 5.1mDS(on),max (TO 263) Excellent gate charge x R product (FOM)DS(on)I 100 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target

 9.12. Size:441K  infineon
ipb052n04n.pdf

IPB05CN10N
IPB05CN10N

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 9.13. Size:341K  infineon
ipb05n03la.pdf

IPB05CN10N
IPB05CN10N

IPB05N03LA GOptiMOS2 Power-TransistorProduct SummaryFeaturesV 25 VDS Ideal for high-frequency dc/dc convertersR (SMD version) 4.6mDS(on),max Qualified according to JEDEC1) for target applicationI 80 AD N-channel - Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)PG-TO263 Superior thermal resistan

 9.14. Size:258K  inchange semiconductor
ipb054n08n3g.pdf

IPB05CN10N
IPB05CN10N

Isc N-Channel MOSFET Transistor IPB054N08N3GFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source

 9.15. Size:242K  inchange semiconductor
ipb055n03l.pdf

IPB05CN10N
IPB05CN10N

isc N-Channel MOSFET Transistor IPB055N03LDESCRIPTIONDrain Current :I = 50A@ T =25D CDrain Source Voltage: V = 30V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS .Designed for high current, high speed switching, switchmode power supplies.ABSOLUTE MAXIMUM RATINGS(T =25)CSY

 9.16. Size:258K  inchange semiconductor
ipb054n06n3.pdf

IPB05CN10N
IPB05CN10N

Isc N-Channel MOSFET Transistor IPB054N06N3FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V

 9.17. Size:252K  inchange semiconductor
ipb057n06n.pdf

IPB05CN10N
IPB05CN10N

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPB057N06NFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIM

 9.18. Size:356K  inchange semiconductor
ipb051n08n.pdf

IPB05CN10N
IPB05CN10N

isc N-Channel MOSFET Transistor IPB051N08NFEATURESDrain Current : I = 100A@ T =25D CDrain Source Voltage: V = 85V(Min)DSSStatic Drain-Source On-Resistance: R = 5.1m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen

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