IPB60R120P7 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPB60R120P7
Código: 60R120P7
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 95 W
Voltaje máximo drenador - fuente |Vds|: 600 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 26 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 36 nC
Tiempo de subida (tr): 14 nS
Conductancia de drenaje-sustrato (Cd): 27 pF
Resistencia entre drenaje y fuente RDS(on): 0.12 Ohm
Paquete / Cubierta: D2PAK TO-263
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IPB60R120P7 Datasheet (PDF)
ipb60r120p7.pdf
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ipb60r120p7.pdf
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ipb60r125cpa.pdf
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ipb60r125c6.pdf
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ipb60r125cp.pdf
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