IPU050N03L MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPU050N03L

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 68 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 50 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 13 nS

Cossⓘ - Capacitancia de salida: 920 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.005 Ohm

Encapsulados: IPAK TO-251

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IPU050N03L datasheet

 ..1. Size:630K  infineon
 ipd050n03l ipf050n03l ips050n03l ipu050n03l.pdf pdf_icon

IPU050N03L

Type IPD050N03L G IPF050N03L G IPS050N03L G IPU050N03L G OptiMOS 3 Power-Transistor Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 5 m DS(on),max Optimized technology for DC/DC converters I 50 A D Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very low

 ..2. Size:261K  inchange semiconductor
 ipu050n03l.pdf pdf_icon

IPU050N03L

isc N-Channel MOSFET Transistor IPU050N03L FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE

 0.1. Size:1000K  infineon
 ipd050n03lg ipf050n03lg ips050n03lg ipu050n03lg ipd050n03l ips050n03l.pdf pdf_icon

IPU050N03L

Type IPD050N03L G IPF050N03L G IPS050N03L G IPU050N03L G OptiMOS 3 Power-Transistor Product Summary Features VDS 30 V Fast switching MOSFET for SMPS RDS(on),max 5 mW Optimized technology for DC/DC converters ID 50 A Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very low on

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