IRLS3813 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRLS3813
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 195 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 160 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.35 V
Carga de la puerta (Qg): 55 nC
Tiempo de subida (tr): 202 nS
Conductancia de drenaje-sustrato (Cd): 1250 pF
Resistencia entre drenaje y fuente RDS(on): 0.00195 Ohm
Paquete / Cubierta: D2PAK TO-263
Búsqueda de reemplazo de MOSFET IRLS3813
IRLS3813 Datasheet (PDF)
irls3813pbf.pdf
IRLS3813PbF HEXFET Power MOSFET Application VDSS 30V Brushed motor drive applications D BLDC motor drive applications RDS(on) typ. 1.60m Battery powered circuits 1.95mmax G Half-bridge and full-bridge topologies ID (Silicon Limited) 247A Synchronous rectifier applications SID (Package Limited) 160A Resona
irls3813pbf.pdf
IRLS3813PbF HEXFET Power MOSFET Application VDSS 30V Brushed motor drive applications D BLDC motor drive applications RDS(on) typ. 1.60m Battery powered circuits 1.95mmax G Half-bridge and full-bridge topologies ID (Silicon Limited) 247A Synchronous rectifier applications SID (Package Limited) 160A Resona
irls3813.pdf
isc N-Channel MOSFET Transistor IRLS3813FEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS
irls3034pbf irlsl3034pbf.pdf
PD -97364AIRLS3034PbFIRLSL3034PbFHEXFET Power MOSFETApplicationsDl DC Motor DriveVDSS 40Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.1.4ml Uninterruptible Power Supply max. 1.7ml High Speed Power SwitchingGID (Silicon Limited) 343Al Hard Switched and High Frequency CircuitsID (Package Limited) 195ASBenefitsl Optimized for Logic
irls3036pbf irlsl3036pbf.pdf
PD -97358IRLS3036PbFIRLSL3036PbFHEXFET Power MOSFETApplicationsDl DC Motor DriveVDSS 60Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.1.9ml Uninterruptible Power Supplymax. 2.4ml High Speed Power SwitchingGID (Silicon Limited) 270Al Hard Switched and High Frequency CircuitsID (Package Limited)S 195ABenefitsl Optimized for Logic
irls3034-7ppbf.pdf
PD - 97362IRLS3034-7PPbFApplicationsHEXFET Power MOSFETl DC Motor DriveDl High Efficiency Synchronous Rectification in SMPSVDSS40Vl Uninterruptible Power SupplyRDS(on) typ.1.0ml High Speed Power Switchingl Hard Switched and High Frequency Circuitsmax. 1.4mGID (Silicon Limited)380AcBenefitsl Optimized for Logic Level Drive ID (Package Limited)
irls3036-7ppbf.pdf
PD -97148AIRLS3036-7PPbFHEXFET Power MOSFETApplicationsDVDSS 60Vl DC Motor Drivel High Efficiency Synchronous Rectification in SMPS RDS(on) typ.1.5m:l Uninterruptible Power Supplymax. 1.9m:l High Speed Power SwitchingGID (Silicon Limited)300Acl Hard Switched and High Frequency CircuitsID (Package Limited)240ASBenefitsl Optimized for Logic Level
auirls3114z.pdf
PD - 96412AUTOMOTIVE GRADEAUIRLS3114ZHEXFET Power MOSFETFeaturesVDSS40VDl Advanced Process TechnologyRDS(on) typ.l Ultra Low On-Resistance 3.8ml Enhanced dV/dT and dI/dT capability max. 4.9ml 175C Operating TemperatureGl Fast Switching ID (Silicon Limited) 122Al Repetitive Avalanche Allowed up to TjmaxSID (Wirebond Limited)56A l Lead-Free, RoHS
auirls3036.pdf
AUTOMOTIVE GRADEAUIRLS3036HEXFET Power MOSFETFeatures Advanced Process TechnologyDVDSS 60V Ultra Low On-ResistanceRDS(on) typ.1.9m Logic Level Gate Drive Dynamic dv/dt Ratingmax. 2.4mG 175C Operating TemperatureID (Silicon Limited) 270A Fast SwitchingID (Package Limited)S 195A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant
irls3036pbf irlsl3036pbf.pdf
PD -97358IRLS3036PbFIRLSL3036PbFHEXFET Power MOSFETApplicationsDl DC Motor DriveVDSS 60Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.1.9ml Uninterruptible Power Supplymax. 2.4ml High Speed Power SwitchingGID (Silicon Limited) 270Al Hard Switched and High Frequency CircuitsID (Package Limited)S 195ABenefitsl Optimized for Logic
auirls3036-7p.pdf
AUTOMOTIVE GRADE AUIRLS3036-7P HEXFET Power MOSFET Features Advanced Process Technology VDSS 60V Ultra Low On-Resistance RDS(on) typ. 1.5m Logic Level Gate Drive max. Dynamic dv/dt Rating 1.9m 175C Operating Temperature ID (Silicon Limited) 300A Fast Switching ID (Package Limited) 240A Repetitive Avalanche Allowed up to T
auirls3034.pdf
AUTOMOTIVE GRADE AUIRLS3034 HEXFET Power MOSFET Features Advanced Process Technology VDSS 40V Ultra Low On-Resistance RDS(on) typ. 1.4m Logic Level Gate Drive max. 1.7m Dynamic dv/dt Rating ID (Silicon Limited) 343A 175C Operating Temperature Fast Switching ID (Package Limited) 195A Repetitive Avalanche Allowed up to Tjmax
irls3036-7ppbf.pdf
PD -97148AIRLS3036-7PPbFHEXFET Power MOSFETApplicationsDVDSS 60Vl DC Motor Drivel High Efficiency Synchronous Rectification in SMPS RDS(on) typ.1.5m:l Uninterruptible Power Supplymax. 1.9m:l High Speed Power SwitchingGID (Silicon Limited)300Acl Hard Switched and High Frequency CircuitsID (Package Limited)240ASBenefitsl Optimized for Logic Level
auirls3034-7p.pdf
AUTOMOTIVE GRADE AUIRLS3034-7P HEXFET Power MOSFET Features Advanced Process Technology VDSS 40V Ultra Low On-Resistance RDS(on) typ. 1.0m Logic Level Gate Drive max. Dynamic dv/dt Rating 1.4m 175C Operating Temperature ID (Silicon Limited) 380A Fast Switching ID (Package Limited) 240A Repetitive Avalanche Allowed up to T
auirls3114z.pdf
AUTOMOTIVE GRADE AUIRLS3114Z HEXFET Power MOSFET Features Advanced Process Technology VDSS 40V Ultra Low On-Resistance RDS(on) typ. 3.8m Logic Level Gate Drive max. 4.9m Enhanced dv/dt and di/dt capability ID (Silicon Limited) 122A 175C Operating Temperature Fast Switching ID (Package Limited) 56A Repetitive Avalanche Allow
irls3036.pdf
Isc N-Channel MOSFET Transistor IRLS3036FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
