IXFH56N30X3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXFH56N30X3
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 320 W
Voltaje máximo drenador - fuente |Vds|: 300 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 56 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4.5 V
Carga de la puerta (Qg): 56 nC
Tiempo de subida (tr): 26 nS
Conductancia de drenaje-sustrato (Cd): 560 pF
Resistencia entre drenaje y fuente RDS(on): 0.027 Ohm
Paquete / Cubierta: TO-247
Búsqueda de reemplazo de MOSFET IXFH56N30X3
IXFH56N30X3 Datasheet (PDF)
ixfa56n30x3 ixfp56n30x3 ixfh56n30x3.pdf
Preliminary Technical InformationX3-Class HiPerFETTM VDSS = 300VIXFA56N30X3Power MOSFET ID25 = 56AIXFP56N30X3 RDS(on) 27m IXFH56N30X3N-Channel Enhancement ModeTO-263 (IXFA)Avalanche RatedGSD (Tab)TO-220 (IXFP)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 300 VVDGR TJ = 25C to 150C, RGS = 1M 300
ixfh56n30x3.pdf
isc N-Channel MOSFET Transistor IXFH56N30X3FEATURESWith TO-247 packagingWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 300 VDSSV G
ixfh42n20 ixfm42n20 ixfh58n20 ixfm58n20 ixft50n20 ixfh50n20 ixfm50n20 ixft58n20.pdf
VDSS ID25 RDS(on)HiPerFETTMPower MOSFETs 200 V 42 A 60mWIXFH/IXFM42N20200 V 50 A 45mWIXFH/IXFM/IXFT50N20200 V 58 A 40mWIXFH/IXFT58N20N-Channel Enhancement Modetrr 200 nsHigh dv/dt, Low trr, HDMOSTM FamilyTO-247 AD (IXFH)(TAB)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 200 VVDGR TJ = 25C to 150C; RGS = 1 MW 200 V TO-268 (D3) Case StyleVG
ixfh52n30q ixfk52n30q ixft52n30q.pdf
IXFH 52N30QHiPerFETTMVDSS = 300 VIXFK 52N30QPower MOSFETs ID25 = 52 AIXFT 52N30QQ-Class RDS(on) = 60 mWtrr 250 nsN-Channel Enhancement ModeAvalanche Rated, High dv/dt, Low trrLow Gate Charge and CapacitancesPreliminary dataSymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 300 VVDGR TJ = 25C to 150C; RGS = 1 MW 300 VVGS Continuo
ixfh58n20q ixft58n20q.pdf
IXFH 58N20QVDSS = 200 VHiPerFETTMIXFT 58N20QID25 = 58 APower MOSFETsRDS(on) = 40 mWQ-Classtrr 200 nsN-Channel Enhancement ModeAvalanche Rated High dv/dt, Low QgPreliminary data sheetTO-268 (D3) (IXFT) Case StyleSymbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 150 C 200 VVDGR TJ = 25 C to 150 C; RGS = 1 M 200 VVGS Continuous 20 VG(TAB)
ixft50n85xhv ixfh50n85x ixfk50n85x.pdf
X-Class HiPerFETTM VDSS = 850VIXFT50N85XHVPower MOSFET ID25 = 50AIXFH50N85X RDS(on) 105m IXFK50N85XTO-268HV (IXFT)N-Channel Enhancement ModeAvalanche RatedGFast Intrinsic DiodeS D (Tab)Symbol Test Conditions Maximum RatingsTO-247 (IXFH)VDSS TJ = 25C to 150C 850 VVDGR TJ = 25C to 150C, RGS = 1M 850 VVGSS Co
ixft52n50p2 ixfh52n50p2.pdf
Advance Technical InformationPolarP2TM HiperFETTM VDSS = 500VIXFH52N50P2ID25 = 52APower MOSFETIXFT52N50P2 RDS(on) 120m N-Channel Enhancement ModeAvalanche RatedTO-247 (IXFH)Fast Intrinsic DiodeGDD (Tab)SSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 500 VTO-268 (IXFT)VDGR TJ = 25C to 150C, RGS = 1M 50
ixfh50n60x ixfq50n60x ixft50n60x.pdf
Preliminary Technical InformationX-Class HiPerFETTM VDSS = 600VIXFT50N60XPower MOSFET ID25 = 50AIXFQ50N60X RDS(on) 73m IXFH50N60XN-Channel Enhancement ModeTO-268 (IXFT)Avalanche RatedFast Intrinsic DiodeGSD (Tab)TO-3P (IXFQ)Symbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 150C 600 VDVDGR TJ = 25C to 1
ixft50n50p3 ixfq50n50p3 ixfh50n50p3.pdf
Polar3TM HiperFETTM VDSS = 500VIXFT50N50P3ID25 = 50APower MOSFETIXFQ50N50P3 RDS(on) 125m IXFH50N50P3N-Channel Enhancement ModeTO-268 (IXFT)Avalanche RatedFast Intrinsic RectifierGSD (Tab)TO-3P (IXFQ)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 500 VGVDGR TJ = 25C to 150C, RGS = 1M 500 VD
Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
