IXFP72N20X3M MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXFP72N20X3M

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 36 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 72 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 28 nS

Cossⓘ - Capacitancia de salida: 660 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm

Encapsulados: TO-220F

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IXFP72N20X3M datasheet

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 ixfp72n20x3m.pdf pdf_icon

IXFP72N20X3M

Preliminary Technical Information X3-Class HiPerFETTM VDSS = 200V IXFP72N20X3M Power MOSFET ID25 = 72A RDS(on) 20m (Electrically Isolated Tab) OVERMOLDED TO-220 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings G Isolated Tab D S VDSS TJ = 25 C to 150 C 200 V VDGR TJ = 25 C to 150 C, RGS = 1M 200 V G = Gate D

 ..2. Size:254K  inchange semiconductor
 ixfp72n20x3m.pdf pdf_icon

IXFP72N20X3M

isc N-Channel MOSFET Transistor IXFP72N20X3M FEATURES With TO-220F packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO

 9.1. Size:159K  ixys
 ixfa7n60p3 ixfp7n60p3.pdf pdf_icon

IXFP72N20X3M

Advance Technical Information Polar3 TM HiPerFETTM VDSS = 600V IXFA7N60P3 Power MOSFETs ID25 = 7A IXFP7N60P3 RDS(on) 1.15 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-263 AA (IXFA) G Symbol Test Conditions Maximum Ratings S VDSS TJ = 25 C to 150 C 600 V D (Tab) VDGR TJ = 25 C to 150 C, RGS = 1M 600 V TO-220AB

 9.2. Size:180K  ixys
 ixfa76n15t2 ixfp76n15t2.pdf pdf_icon

IXFP72N20X3M

Advance Technical Information TrenchT2TM HiperFETTM VDSS = 150V IXFA76N15T2 ID25 = 76A Power MOSFET IXFP76N15T2 RDS(on) 20m N-Channel Enhancement Mode Avalanche Rated TO-263 AA (IXFA) Fast Intrnsic Rectifier G S Symbol Test Conditions Maximum Ratings D (TAB) VDSS TJ = 25 C to 175 C 150 V TO-220AB (IXFP) VDGR TJ = 25 C to 175 C, RGS = 1M

MOSTRAR MÁS

Otros transistores... IRFU7746, IRL40S212, IRL60S216, IRLS3813, IXFH56N30X3, IXFP12N65X2, IXFP20N85X, IXFP36N20X3M, 10N65, IXFQ8N85X, IXFY36N20X3, IXTA12N70X2, IXTP230N04T4M, MFT60N12T22FS, MMD60R580QRH, MTD300N20J3, NTHL040N65S3F