MFT60N12T22FS Todos los transistores

 

MFT60N12T22FS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MFT60N12T22FS
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 45 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 12 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.7 Ohm
   Paquete / Cubierta: TO-220F

 Búsqueda de reemplazo de MOSFET MFT60N12T22FS

 

MFT60N12T22FS Datasheet (PDF)

 ..1. Size:262K  inchange semiconductor
mft60n12t22fs.pdf

MFT60N12T22FS
MFT60N12T22FS

isc N-Channel MOSFET Transistor MFT60N12T22FSDESCRIPTIONDrain Current I =12A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.7(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSHigh current , high speed switchingSwitch mode power supp

 9.1. Size:1291K  magnachip
mmft60r115pcth.pdf

MFT60N12T22FS
MFT60N12T22FS

MMFT60R115PC Datasheet MMFT60R115PC 600V 0.115 N-channel MOSFET Description MMFT60R115PC is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as we

 9.2. Size:1162K  magnachip
mmft60r290pth.pdf

MFT60N12T22FS
MFT60N12T22FS

MMFT60R290P Datasheet MMFT60R290P 600V 0.29 N-channel MOSFET Description MMFT60R290P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well a

 9.3. Size:1413K  magnachip
mmft60r195pth.pdf

MFT60N12T22FS
MFT60N12T22FS

MMFT60R195P Datasheet MMFT60R195P 600V 0.195 N-channel MOSFET Description MMFT60R195P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well

 9.4. Size:1053K  magnachip
mmft60r290pcth.pdf

MFT60N12T22FS
MFT60N12T22FS

MMFT60R290PC Datasheet MMFT60R290PC 600V 0.29 N-channel MOSFET Description MMFT60R290PC is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as wel

 9.5. Size:1295K  magnachip
mmft60r195pcth.pdf

MFT60N12T22FS
MFT60N12T22FS

MMFT60R195PC Datasheet MMFT60R195PC 600V 0.195 N-channel MOSFET Description MMFT60R195PC is power MOSFET using Magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as we

 9.6. Size:1068K  magnachip
mmft60r380pcth.pdf

MFT60N12T22FS
MFT60N12T22FS

MMFT60R380PC Datasheet MMFT60R380PC 600V 0.38 N-channel MOSFET Description MMFT60R380PC is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as wel

 9.7. Size:1300K  magnachip
mmft60r380pth.pdf

MFT60N12T22FS
MFT60N12T22FS

MMFT60R380P Datasheet MMFT60R380P 600V 0.38 N-channel MOSFET Description MMFT60R380P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well a

 9.8. Size:279K  inchange semiconductor
mmft60r115pcth.pdf

MFT60N12T22FS
MFT60N12T22FS

isc N-Channel MOSFET Transistor MMFT60R115PCTHFEATURESDrain Current : I = 33A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.115(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand

 9.9. Size:279K  inchange semiconductor
mmft60r290pth.pdf

MFT60N12T22FS
MFT60N12T22FS

isc N-Channel MOSFET Transistor MMFT60R290PTHFEATURESDrain Current : I = 13A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.29(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand s

 9.10. Size:279K  inchange semiconductor
mmft60r195pth.pdf

MFT60N12T22FS
MFT60N12T22FS

isc N-Channel MOSFET Transistor MMFT60R195PTHFEATURESDrain Current : I = 20A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.195(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand

 9.11. Size:279K  inchange semiconductor
mmft60r290pcth.pdf

MFT60N12T22FS
MFT60N12T22FS

isc N-Channel MOSFET Transistor MMFT60R290PCTHFEATURESDrain Current : I = 13A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.29(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand

 9.12. Size:279K  inchange semiconductor
mmft60r195pcth.pdf

MFT60N12T22FS
MFT60N12T22FS

isc N-Channel MOSFET Transistor MMFT60R195PCTHFEATURESDrain Current : I = 20A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.195(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand

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