MFT60N12T22FS Todos los transistores

 ..1. Size:262K  inchange semiconductor
 mft60n12t22fs.pdf

isc N-Channel MOSFET Transistor MFT60N12T22FS DESCRIPTION Drain Current I =12A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 0.7 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High current , high speed switching Switch mode power supp

 9.1. Size:1291K  magnachip
 mmft60r115pcth.pdf

MMFT60R115PC Datasheet MMFT60R115PC 600V 0.115 N-channel MOSFET Description MMFT60R115PC is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as we

 9.2. Size:1162K  magnachip
 mmft60r290pth.pdf

MMFT60R290P Datasheet MMFT60R290P 600V 0.29 N-channel MOSFET Description MMFT60R290P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well a

 9.3. Size:1413K  magnachip
 mmft60r195pth.pdf

MMFT60R195P Datasheet MMFT60R195P 600V 0.195 N-channel MOSFET Description MMFT60R195P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well

 9.4. Size:1053K  magnachip
 mmft60r290pcth.pdf

MMFT60R290PC Datasheet MMFT60R290PC 600V 0.29 N-channel MOSFET Description MMFT60R290PC is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as wel

 9.5. Size:1295K  magnachip
 mmft60r195pcth.pdf

MMFT60R195PC Datasheet MMFT60R195PC 600V 0.195 N-channel MOSFET Description MMFT60R195PC is power MOSFET using Magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as we

 9.6. Size:1068K  magnachip
 mmft60r380pcth.pdf

MMFT60R380PC Datasheet MMFT60R380PC 600V 0.38 N-channel MOSFET Description MMFT60R380PC is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as wel

 9.7. Size:1300K  magnachip
 mmft60r380pth.pdf

MMFT60R380P Datasheet MMFT60R380P 600V 0.38 N-channel MOSFET Description MMFT60R380P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well a

 9.8. Size:279K  inchange semiconductor
 mmft60r115pcth.pdf

isc N-Channel MOSFET Transistor MMFT60R115PCTH FEATURES Drain Current I = 33A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.115 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and

 9.9. Size:279K  inchange semiconductor
 mmft60r290pth.pdf

isc N-Channel MOSFET Transistor MMFT60R290PTH FEATURES Drain Current I = 13A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.29 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and s

 9.10. Size:279K  inchange semiconductor
 mmft60r195pth.pdf

isc N-Channel MOSFET Transistor MMFT60R195PTH FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.195 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and

 9.11. Size:279K  inchange semiconductor
 mmft60r290pcth.pdf

isc N-Channel MOSFET Transistor MMFT60R290PCTH FEATURES Drain Current I = 13A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.29 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and

 9.12. Size:279K  inchange semiconductor
 mmft60r195pcth.pdf

isc N-Channel MOSFET Transistor MMFT60R195PCTH FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.195 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and