MFT60N12T22FS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MFT60N12T22FS
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 45 W
Voltaje máximo drenador - fuente |Vds|: 600 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 12 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Resistencia entre drenaje y fuente RDS(on): 0.7 Ohm
Paquete / Cubierta: TO-220F
Búsqueda de reemplazo de MOSFET MFT60N12T22FS
MFT60N12T22FS Datasheet (PDF)
mft60n12t22fs.pdf
isc N-Channel MOSFET Transistor MFT60N12T22FSDESCRIPTIONDrain Current I =12A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.7(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSHigh current , high speed switchingSwitch mode power supp
mmft60r115pcth.pdf
MMFT60R115PC Datasheet MMFT60R115PC 600V 0.115 N-channel MOSFET Description MMFT60R115PC is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as we
mmft60r290pth.pdf
MMFT60R290P Datasheet MMFT60R290P 600V 0.29 N-channel MOSFET Description MMFT60R290P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well a
mmft60r195pth.pdf
MMFT60R195P Datasheet MMFT60R195P 600V 0.195 N-channel MOSFET Description MMFT60R195P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well
mmft60r290pcth.pdf
MMFT60R290PC Datasheet MMFT60R290PC 600V 0.29 N-channel MOSFET Description MMFT60R290PC is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as wel
mmft60r195pcth.pdf
MMFT60R195PC Datasheet MMFT60R195PC 600V 0.195 N-channel MOSFET Description MMFT60R195PC is power MOSFET using Magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as we
mmft60r380pcth.pdf
MMFT60R380PC Datasheet MMFT60R380PC 600V 0.38 N-channel MOSFET Description MMFT60R380PC is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as wel
mmft60r380pth.pdf
MMFT60R380P Datasheet MMFT60R380P 600V 0.38 N-channel MOSFET Description MMFT60R380P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well a
mmft60r115pcth.pdf
isc N-Channel MOSFET Transistor MMFT60R115PCTHFEATURESDrain Current : I = 33A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.115(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand
mmft60r290pth.pdf
isc N-Channel MOSFET Transistor MMFT60R290PTHFEATURESDrain Current : I = 13A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.29(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand s
mmft60r195pth.pdf
isc N-Channel MOSFET Transistor MMFT60R195PTHFEATURESDrain Current : I = 20A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.195(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand
mmft60r290pcth.pdf
isc N-Channel MOSFET Transistor MMFT60R290PCTHFEATURESDrain Current : I = 13A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.29(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand
mmft60r195pcth.pdf
isc N-Channel MOSFET Transistor MMFT60R195PCTHFEATURESDrain Current : I = 20A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.195(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand
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