PSMN3R7-100BSE Todos los transistores

 

PSMN3R7-100BSE MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PSMN3R7-100BSE

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 405 W

Tensión drenaje-fuente (Vds): 100 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 120 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Resistencia drenaje-fuente RDS(on): 0.00395 Ohm

Empaquetado / Estuche: D2PAK, TO-263

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PSMN3R7-100BSE Datasheet (PDF)

1.1. psmn3r7-100bse.pdf Size:258K _inchange_semiconductor

PSMN3R7-100BSE
PSMN3R7-100BSE

Isc N-Channel MOSFET Transistor PSMN3R7-100BSE ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Sourc

2.1. psmn3r7-25ylc.pdf Size:349K _philips2

PSMN3R7-100BSE
PSMN3R7-100BSE

PSMN3R7-25YLC N-channel 25 V 3.9 m? logic level MOSFET in LFPAK using NextPower technology Rev. 01 2 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High

2.2. psmn3r7-30ylc.pdf Size:345K _philips2

PSMN3R7-100BSE
PSMN3R7-100BSE

PSMN3R7-30YLC N-channel 30 V 3.95m? logic level MOSFET in LFPAK using NextPower technology Rev. 01 2 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High

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