CJ3404-HF Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CJ3404-HF 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.35 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 5.8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm
Encapsulados: SOT-23
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CJ3404-HF datasheet
..1. Size:331K comchip
cj3404-hf.pdf 
MOSFET Comchip S M D D i o d e S p e c i a l i s t CJ3404-HF (N-Channel ) Reverse Voltage 30 Volts Forward Current 5.8 A RoHS Device Halogen Free SOT-23 Features 0.118(3.00) 0.110(2.80) -N-Channel -Enhancement mode field effect transistor. 3 -Use advanced trench technology to provide 0.055(1.40) 0.047(1.20) excellent rds(on) and low gate charge 1 2 -This device is su
8.1. Size:981K jiangsu
cj3404.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ3404 N-Channel Enhancement Mode Field Effect Transistor SOT-23 ID V(BR)DSS RDS(on)MAX 30m @ 10V 30V 5.8A 1. GATE 42m @4.5V 2. SOURCE 3. DRAIN DESCRIPTION The CJ3404 use advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for u
9.1. Size:1012K jiangsu
cj3400a.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ3400A N-Channel Enhancement Mode Field Effect Transistor SOT-23 ID V(BR)DSS RDS(on)MAX 32m @10V 30V 38m @4.5V 5.8A 1. GATE 45m @2.5V 2. SOURCE 3. DRAIN FEATURE APPLICATION High dense cell design for extremely low RDS(ON) Load/Power Switching Exceptional on-resistanc
9.2. Size:300K jiangsu
cj3407.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ3407 P-Channel Enhancement Mode Field Effect Transistor SOT-23 General Description The CJ3407 uses advanced trench technology to provide excellent RDS(on) with low gate charge. This device is suitable for use as a load 1. GATE switch or in PWM applications. 2. SOURCE 3. DRAIN MARKING 3
9.3. Size:377K jiangsu
cj3401.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ3401 P-Channel Enhancement Mode Field Effect Transistor SOT-23 FEATURE 1. GATE High dense cell design for extremely low RDS(ON). 2. SOURCE Exceptional on-resistance and maximum DC current capability 3. DRAIN D MARKING R1 G S Maximum ratings ( Ta=25 unless otherwise noted
9.4. Size:744K jiangsu
cj3402.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETs CJ3402 N-Channel MOSFET ID V(BR)DSS RDS(on)MAX SOT-23 55 m @10V 30V 4A m 70 @4.5V 110m @2.5V DESCRIPTION 1. GATE The CJ3402 uses advanced trench technology to provide excellent 2. SOURCE 3. DRAIN RDS(ON) , low gate charge and operation with gate voltage as low as 2.5V.
9.5. Size:1096K jiangsu
cj3406.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETs CJ3406 N-Channel Enhancement Mode Field Effect Transistor ID V(BR)DSS RDS(on)MAX SOT-23 65 m @10V 30V 3.6A m @4.5V 105 1. GATE 2. SOURCE 3. DRAIN DESCRIPTION The CJ3406 use advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for
9.6. Size:278K jiangsu
cj3400-hf.pdf
MOSFET Comchip S M D D i o d e S p e c i a l i s t CJ3400-HF (N-Channel ) Reverse Voltage 30 Volts Forward Current 5.8 A RoHS Device Halogen Free SOT-23 Features 0.118(3.00) 0.110(2.80) - N-Channel Enhancement mode field effect transistor. 3 - High dense cell design for extermely low RDS(ON) 0.055(1.40) 0.047(1.20) - Exceptional on-resistance and maximum DC current capab
9.7. Size:169K jiangsu
cj3400.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ3400 N-Channel Enhancement Mode Field Effect Transistor SOT-23 FEATURE 1. GATE High dense cell design for extremely low RDS(ON) 2. SOURCE Exceptional on-resistance and maximum DC current capability 3. DRAIN MARKING R0 Maximum ratings ( Ta=25 unless otherwise noted) Parameter
9.8. Size:1001K jiangsu
cj3401a.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ3401A P-Channel Enhancement Mode Field Effect Transistor ID V(BR)DSS RDS(on)MAX SOT-23 m @-10V 60 -30V 70 m -4.2A @-4.5V m @-2.5V 85 FEATURE APPLICATION High dense cell design for extremely low RDS(ON) Load Switch for Portable Devices Exceptional on-resistance and maxi
9.9. Size:114K jiangsu
cj3401-hf.pdf
MOSFET Comchip S M D D i o d e S p e c i a l i s t CJ3401-HF (P-Channel ) Reverse Voltage - 30 Volts Forward Current - 4.2 A RoHS Device Halogen Free SOT-23 Features 0.118(3.00) - P-Channel 0.110(2.80) - High dense cell design for extremely low RDS(ON) 3 0.055(1.40) - Exceptional on-resistance and miximum DC current 0.047(1.20) capability. 1 2 0.079(2.00) 0.071(1.80) Me
9.10. Size:1722K cn vbsemi
cj3402.pdf
CJ3402 www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SOT-23) G 1
9.11. Size:1722K cn vbsemi
cj3400.pdf
CJ3400 www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SOT-23) G 1
Otros transistores... CJ3400, CJ3400A, CJ3400-HF, CJ3401, CJ3401A, CJ3401-HF, CJ3402, CJ3404, IRFP260N, CJ3406, CJ3407, CJ3415, CJ3420, CJ4153, CJ502K, CJ8810, CJ8820
