CJ3404-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: CJ3404-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.35 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 5.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm
Paquete / Cubierta: SOT-23

Búsqueda de reemplazo de MOSFET CJ3404-HF

CJ3404-HF Datasheet (PDF)

..1. Size:331K comchip
cj3404-hf.pdf

MOSFETComchipS M D D i o d e S p e c i a l i s tCJ3404-HF (N-Channel )Reverse Voltage: 30 VoltsForward Current: 5.8 ARoHS DeviceHalogen FreeSOT-23Features0.118(3.00)0.110(2.80) -N-Channel -Enhancement mode field effect transistor.3 -Use advanced trench technology to provide 0.055(1.40)0.047(1.20)excellent rds(on) and low gate charge1 2 -This device is su

8.1. Size:981K jiangsu
cj3404.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ3404 N-Channel Enhancement Mode Field Effect Transistor SOT-23 ID V(BR)DSS RDS(on)MAX 30m@ 10V30V5.8A1. GATE 42m@4.5V2. SOURCE 3. DRAIN DESCRIPTION The CJ3404 use advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for u

9.1. Size:1012K jiangsu
cj3400a.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ3400A N-Channel Enhancement Mode Field Effect Transistor SOT-23 ID V(BR)DSS RDS(on)MAX 32m@10V30V 38m@4.5V5.8A1. GATE 45m@2.5V2. SOURCE 3. DRAIN FEATURE APPLICATION High dense cell design for extremely low RDS(ON) Load/Power Switching Exceptional on-resistanc

9.2. Size:300K jiangsu
cj3407.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ3407 P-Channel Enhancement Mode Field Effect Transistor SOT-23 General Description The CJ3407 uses advanced trench technology to provide excellent RDS(on) with low gate charge. This device is suitable for use as a load 1. GATE switch or in PWM applications. 2. SOURCE 3. DRAIN MARKING: 3

9.3. Size:377K jiangsu
cj3401.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ3401 P-Channel Enhancement Mode Field Effect Transistor SOT-23 FEATURE 1. GATE High dense cell design for extremely low RDS(ON). 2. SOURCE Exceptional on-resistance and maximum DC current capability 3. DRAIN D MARKING: R1 G S Maximum ratings ( Ta=25 unless otherwise noted

9.4. Size:744K jiangsu
cj3402.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETsCJ3402 N-Channel MOSFET ID V(BR)DSS RDS(on)MAX SOT-23 55 m@10V30V 4Am70 @4.5V110m@2.5VDESCRIPTION 1. GATE The CJ3402 uses advanced trench technology to provide excellent 2. SOURCE 3. DRAIN RDS(ON) , low gate charge and operation with gate voltage as low as 2.5V.

9.5. Size:1096K jiangsu
cj3406.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETsCJ3406 N-Channel Enhancement Mode Field Effect Transistor ID V(BR)DSS RDS(on)MAX SOT-23 65 m@10V30V 3.6Am@4.5V1051. GATE 2. SOURCE 3. DRAIN DESCRIPTION The CJ3406 use advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for

9.6. Size:278K jiangsu
cj3400-hf.pdf

MOSFETComchipS M D D i o d e S p e c i a l i s tCJ3400-HF (N-Channel )Reverse Voltage: 30 VoltsForward Current: 5.8 ARoHS DeviceHalogen Free SOT-23Features0.118(3.00)0.110(2.80) - N-Channel Enhancement mode field effect transistor. 3 - High dense cell design for extermely low RDS(ON)0.055(1.40)0.047(1.20) - Exceptional on-resistance and maximum DC current capab

9.7. Size:169K jiangsu
cj3400.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ3400 N-Channel Enhancement Mode Field Effect Transistor SOT-23 FEATURE 1. GATE High dense cell design for extremely low RDS(ON) 2. SOURCE Exceptional on-resistance and maximum DC current capability 3. DRAIN MARKING: R0 Maximum ratings ( Ta=25 unless otherwise noted) Parameter

9.8. Size:1001K jiangsu
cj3401a.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ3401A P-Channel Enhancement Mode Field Effect Transistor ID V(BR)DSS RDS(on)MAX SOT-23 m@-10V60-30V 70 m -4.2A@-4.5Vm@-2.5V85FEATURE APPLICATION High dense cell design for extremely low RDS(ON) Load Switch for Portable Devices Exceptional on-resistance and maxi

9.9. Size:114K jiangsu
cj3401-hf.pdf

MOSFETComchipS M D D i o d e S p e c i a l i s tCJ3401-HF (P-Channel )Reverse Voltage: - 30 VoltsForward Current: - 4.2 ARoHS DeviceHalogen FreeSOT-23Features0.118(3.00) - P-Channel 0.110(2.80) - High dense cell design for extremely low RDS(ON) 30.055(1.40) - Exceptional on-resistance and miximum DC current0.047(1.20)capability.1 20.079(2.00)0.071(1.80)Me

9.10. Size:1722K cn vbsemi
cj3402.pdf

CJ3402www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)G 1

9.11. Size:1722K cn vbsemi
cj3400.pdf

CJ3400www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)G 1

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