CJD01N60 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CJD01N60 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 20 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 1 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 21 nS
Cossⓘ - Capacitancia de salida: 28 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 10 Ohm
Encapsulados: TO-251
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CJD01N60 datasheet
cjd01n60.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L Plastic-Encapsulate MOSFETS CJD01N60 N-Channel Power MOSFET TO-251-3L General Description The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition , this advanced MOSFET is designed 1. GATE 2. DRAIN to withsta
cjd01n65b.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L Plastic-Encapsulate MOSFETS CJD01N65B N-Channel Power MOSFET TO-251-3L GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, hi
cjd01n80.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L Plastic-Encapsulate MOSFETS CJD01N80 N-Channel Power MOSFET TO-251-3L GENERAL DESCRIPTION The CJD01N80 is an N-channel mode power MOSFET using advanced technology to provide costomers with planar stripe. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also
Otros transistores... CJB01N65B, CJB02N65, CJB04N60A, CJB04N65, CJB04N65A, CJB08N65, CJB10N60, CJB71N90, AO3401, CJD01N65B, CJD01N80, CJD02N60, CJD02N65, CJD04N60, CJD04N60A, CJD04N60B, CJD04N65
History: SVFP14N60CFJD | CJP04N65A | IXFP102N15T | AFN1024E
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