CJD04N60B Todos los transistores

 

CJD04N60B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CJD04N60B
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 5 nC
   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 180 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 3 Ohm
   Paquete / Cubierta: TO-251S
     - Selección de transistores por parámetros

 

CJD04N60B Datasheet (PDF)

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CJD04N60B

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251S Plastic-Encapsulate MOSFETS CJD04N60B 600V N-Channel Power MOSFET TO-251S General Description This advanced high voltage MOSFET is designed to wighstand high energy in the avalanche mode and switch efficiently.This new high energy device also offers a drain-to-source diode wigh fast recovery time.Desighed 1. GATE for

 6.1. Size:421K  jiangsu
 cjd04n60a.pdf pdf_icon

CJD04N60B

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251S Plastic-Encapsulate MOSFETS CJD04N60A N-Channel Power MOSFET TO-251S GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, high s

 6.2. Size:640K  jiangsu
 cjd04n60.pdf pdf_icon

CJD04N60B

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate MOSFETSCJD04N60 N-Channel Power MOSFET TO-251 General Description 1. GATE This advanced high voltage MOSFET is designed to wighstand 2. DRAIN 3. SOURCE high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode wigh fast recovery

 7.1. Size:439K  jiangsu
 cjd04n65.pdf pdf_icon

CJD04N60B

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251S Plastic-Encapsulate MOSFETS CJD04N65 N-Channel Power MOSFET TO-251SGENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, high spe

MOSTRAR MÁS

Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: 2SK1279

 

 
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