CJPF03N80 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CJPF03N80  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 25 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 800 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 27 nS

Cossⓘ - Capacitancia de salida: 57 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 4.2 Ohm

Encapsulados: TO-220F

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CJPF03N80 datasheet

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CJPF03N80

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate MOSFETS CJPF03N80 N-Channel Power MOSFET TO-220F GENERAL DESCRIPTION The CJPF03N80 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURE Excellent package for good heat dissipation Ul

 9.1. Size:133K  jiangsu
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CJPF03N80

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate MOSFETS CJPF01N65B N-Channel Power MOSFET TO-220F GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, high

 9.2. Size:126K  jiangsu
 cjpf08n60.pdf pdf_icon

CJPF03N80

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate MOSFETS CJPF08N60 N-Channel Power MOSFET TO-220F GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, high s

 9.3. Size:527K  jiangsu
 cjpf02n60.pdf pdf_icon

CJPF03N80

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate MOSFETS CJPF02N60 N-Channel Power MOSFET TO-220F General Description The high voltage MOSFET uses an advanced termination scheme 1. GATE to provide enhanced voltage-blocking capability without degrading 2. DRAIN performance over time. In addition , this advanced MOSFET is designed 3. SOURCE

MOSTRAR MÁS

Otros transistores... CJP12N65, CJP71N90, CJP75N75, CJP75N80, CJP85N80, CJPF01N65B, CJPF02N60, CJPF02N65, 7N60, CJPF04N60, CJPF04N60A, CJPF04N65, CJPF04N65A, CJPF04N80, CJPF05N60, CJPF05N60B, CJPF05N65