CJPF10N65 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CJPF10N65
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 30 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 10 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 69 nS
Cossⓘ - Capacitancia de salida: 166 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1 Ohm
Paquete / Cubierta: TO-220F
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CJPF10N65 Datasheet (PDF)
cjpf10n65.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate MOSFETS CJPF10N65 N-Channel Power MOSFET TO-220F GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Designed for high voltage, high s
cjp10n60 cjpf10n60.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L/TO-220F Plastic-Encapsulate MOSFETSCJP10N60,CJPF10N60 N-Channel Power MOSFET TO-220-3L/TO-220FDescription The CJP10N60/CJPF10N60 is a high voltage and high current power MOSFET, designed to have characteristics, such as fast switching time, low gate charge, low on-state resistance and have rugged avalanche character
cjpf12n60.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 / F Plastic-Encapsulate MOSFETS CJP12N60,CJPF12N60 600V N-Channel Power MOSFET General Description This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withistand high energy pulse in the avalanche and commutation mode. T
cjpf12n65.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate MOSFETS CJPF12N65 N-Channel Power MOSFET TO-220F GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Designed for high voltage, high s
Otros transistores... CJPF05N60 , CJPF05N60B , CJPF05N65 , CJPF07N60 , CJPF07N65 , CJPF08N60 , CJPF08N65 , CJPF10N60 , AO4468 , CJPF12N60 , CJPF12N65 , CJQ4410 , CJQ4435 , CJQ4438 , CJQ4459 , CJQ9435 , CJU01N60 .
History: STS11N3LLH5 | STT3P2UH7 | AP3407S | BRFL70R360C | FTK4703 | STM8501 | P1006BTFS
History: STS11N3LLH5 | STT3P2UH7 | AP3407S | BRFL70R360C | FTK4703 | STM8501 | P1006BTFS



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