CTLDM7120-M563 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CTLDM7120-M563  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 1 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 120 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm

Encapsulados: TLM563

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CTLDM7120-M563 datasheet

 ..1. Size:632K  central
 ctldm7120-m563.pdf pdf_icon

CTLDM7120-M563

CTLDM7120-M563 SURFACE MOUNT www.centralsemi.com N-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CTLDM7120-M563 SILICON MOSFET is a high quality, enhancement-mode N-channel MOSFET packaged in a space saving 1.6 x 1.6mm TLM surface mount package. This device is a TLM equivalent of the popular CMLDM7120G, SOT-563 device, featuring enhanced thermal characte

 3.1. Size:613K  central
 ctldm7120-m832ds.pdf pdf_icon

CTLDM7120-M563

CTLDM7120-M832DS SURFACE MOUNT www.centralsemi.com DUAL N-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR SILICON MOSFET CTLDM7120-M832DS is an Enhancement-mode Dual N-Channel MOSFET, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Threshold Voltage. MARKING COD

 3.2. Size:456K  central
 ctldm7120-m621 ctldm7120-m621h.pdf pdf_icon

CTLDM7120-M563

CTLDM7120-M621H SURFACE MOUNT www.centralsemi.com N-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CTLDM7120-M621H is SILICON MOSFET an Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Threshold Voltage. MARKIN

 3.3. Size:470K  central
 ctldm7120-m832d.pdf pdf_icon

CTLDM7120-M563

CTLDM7120-M832D SURFACE MOUNT www.centralsemi.com DUAL, N-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR SILICON MOSFETS CTLDM7120-M832D is an Enhancement-mode Dual N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Threshold Volt

MOSTRAR MÁS

Otros transistores... CJV01N65B, CJW1012, CTLDM303N-M832DS, CTLDM304P-M832DS, CTLDM3590, CTLDM7002A-M621, CTLDM7002A-M621H, CTLDM7003-M621, IRF9540, CTLDM7120-M621, CTLDM7120-M621H, CTLDM7120-M832D, CTLDM7120-M832DS, CTLDM7181-M832D, CTLDM7590, CTLDM8002A-M621, CTLDM8002A-M621H