CWDM305ND Todos los transistores

 

CWDM305ND MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CWDM305ND
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 5.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Cossⓘ - Capacitancia de salida: 52 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.03 Ohm
   Paquete / Cubierta: SOIC-8
 

 Búsqueda de reemplazo de CWDM305ND MOSFET

   - Selección ⓘ de transistores por parámetros

 

CWDM305ND Datasheet (PDF)

 ..1. Size:1143K  central
 cwdm305nd.pdf pdf_icon

CWDM305ND

CWDM305NDSURFACE MOUNTwww.centralsemi.comDUAL N-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CWDM305ND is SILICON MOSFETa dual, high current N-channel enhancement-mode silicon MOSFET designed for high speed pulsed amplifier and driver applications. This energy efficient MOSFET offers beneficially low rDS(ON), low gate charge, and low threshold voltage.M

 6.1. Size:1136K  central
 cwdm305n.pdf pdf_icon

CWDM305ND

CWDM305NSURFACE MOUNTwww.centralsemi.comN-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CWDM305N is SILICON MOSFETa high current N-channel enhancement-mode silicon MOSFET designed for high speed pulsed amplifier and driver applications. This energy efficient MOSFET offers beneficially low rDS(ON), low gate charge, and low threshold voltage.MARKING CODE:

 7.1. Size:654K  central
 cwdm305pd.pdf pdf_icon

CWDM305ND

CWDM305PDSURFACE MOUNTwww.centralsemi.comDUAL P-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CWDM305PD SILICON MOSFETis a dual high current P-channel enhancement-mode silicon MOSFET manufactured by the P-channel DMOS process, and is designed for high speed pulsed amplifier and driver applications. This MOSFET offers high current, low rDS(ON), low threshol

 7.2. Size:647K  central
 cwdm305p.pdf pdf_icon

CWDM305ND

CWDM305PSURFACE MOUNTwww.centralsemi.comP-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CWDM305P is SILICON MOSFETa high current P-channel enhancement-mode silicon MOSFET, manufactured by the P-channel DMOS process, and is designed for high speed pulsed amplifier and driver applications. This MOSFET offers high current, low rDS(ON), low threshold voltage,

MOSTRAR MÁS

Otros transistores... CTM18N20 , CTM2N7002 , CTN2302 , CTN2304 , CTP2303 , CWDM3011N , CWDM3011P , CWDM305N , P60NF06 , CWDM305P , CWDM305PD , CXDM1002N , CXDM3069N , CXDM4060N , CXDM4060P , CXDM6053N , CZDM1003N .

 

 
Back to Top

 


 
.