CWDM305P Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CWDM305P  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 16 V

|Id|ⓘ - Corriente continua de drenaje: 5.3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 60 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.072 Ohm

Encapsulados: SOIC-8

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CWDM305P datasheet

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 cwdm305p.pdf pdf_icon

CWDM305P

CWDM305P SURFACE MOUNT www.centralsemi.com P-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CWDM305P is SILICON MOSFET a high current P-channel enhancement-mode silicon MOSFET, manufactured by the P-channel DMOS process, and is designed for high speed pulsed amplifier and driver applications. This MOSFET offers high current, low rDS(ON), low threshold voltage,

 0.1. Size:654K  central
 cwdm305pd.pdf pdf_icon

CWDM305P

CWDM305PD SURFACE MOUNT www.centralsemi.com DUAL P-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CWDM305PD SILICON MOSFET is a dual high current P-channel enhancement-mode silicon MOSFET manufactured by the P-channel DMOS process, and is designed for high speed pulsed amplifier and driver applications. This MOSFET offers high current, low rDS(ON), low threshol

 7.1. Size:1143K  central
 cwdm305nd.pdf pdf_icon

CWDM305P

CWDM305ND SURFACE MOUNT www.centralsemi.com DUAL N-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CWDM305ND is SILICON MOSFET a dual, high current N-channel enhancement-mode silicon MOSFET designed for high speed pulsed amplifier and driver applications. This energy efficient MOSFET offers beneficially low rDS(ON), low gate charge, and low threshold voltage. M

 7.2. Size:1136K  central
 cwdm305n.pdf pdf_icon

CWDM305P

CWDM305N SURFACE MOUNT www.centralsemi.com N-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CWDM305N is SILICON MOSFET a high current N-channel enhancement-mode silicon MOSFET designed for high speed pulsed amplifier and driver applications. This energy efficient MOSFET offers beneficially low rDS(ON), low gate charge, and low threshold voltage. MARKING CODE

MOSTRAR MÁS

Otros transistores... CTM2N7002, CTN2302, CTN2304, CTP2303, CWDM3011N, CWDM3011P, CWDM305N, CWDM305ND, BS170, CWDM305PD, CXDM1002N, CXDM3069N, CXDM4060N, CXDM4060P, CXDM6053N, CZDM1003N, D55NF06