DE275X2-501N16A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

DE275X2-501N16A Datasheet (PDF)

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DE275X2-501N16A RF Power MOSFET Common Source Push-Pull Pair N-Channel Enhancement Mode VDSS = 500 V Low Qg and Rg High dv/dt ID25 = 16 A Nanosecond Switching RDS(on) = 0.38 The DE275X2-501N16A is a matched pair of RF power MOSFET devices in a common source configuration. The device is optimized for push-pull or paral-PDC = 1180 W lel operatio

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DE275X2-102N06A RF Power MOSFET Common Source Push-Pull Pair N-Channel Enhancement Mode Low Qg and Rg VDSS = 1000 V High dv/dt ID25 = 16 A Nanosecond Switching RDS(on) = The DE275X2-102N06A is a matched pair of RF power MOSFET devices in a 0.8 common source configuration. The device is optimized for push-pull or paral-PDC = 1180 W

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DE275-201N25A RF Power MOSFET N-Channel Enhancement Mode VDSS = 200 V Low Qg and Rg High dv/dt ID25 = 25 A Nanosecond Switching RDS(on) = 0.13 Ideal for Class C, D, & E Applications Symbol Test Conditions Maximum Ratings PDC = 590 W TJ = 25C to 150C VDSS 200 V TJ = 25C to 150C; RGS = 1 M VDGR 200 V Continuous VGS 20 V Transie

9.2. Size:167K ixys
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DE275-102N06A RF Power MOSFET N-Channel Enhancement Mode VDSS = 1000 V Low Qg and Rg High dv/dt ID25 = 8 A Nanosecond Switching RDS(on) = 1.5 Ideal for Class C, D, & E Applications PDC = 590 W Symbol Test Conditions Maximum Ratings TJ = 25C to 150C VDSS 1000 V TJ = 25C to 150C; RGS = 1 M VDGR 1000 V Continuous VGS 20 V Transi