DE375-102N10A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

DE375-102N10A Datasheet (PDF)

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DE375-102N10A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg VDSS = 1000 V High dv/dt Nanosecond Switching ID25 = 10 A Ideal for Class C, D, & E Applications RDS(on) 1.2 Symbol Test Conditions Maximum Ratings PDC = 940 W TJ = 25C to 150C VDSS 1000 V TJ = 25C to 150C; RGS = 1 M VDGR 1000 V Continuous VGS 20 V Tra

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DE375-102N12A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt VDSS = 1000 V Nanosecond Switching ID25 = 12 A 50MHz Maximum Frequency RDS(on) 1.05 Symbol Test Conditions Maximum Ratings TJ = 25C to 150C PDC = 940 W VDSS 1000 V TJ = 25C to 150C; RGS = 1 M VDGR 1000 V Continuous VGS 20 V Transient VGSM

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DE375-501N21A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg VDSS = 500 V High dv/dt Nanosecond Switching ID25 = 25 A 50MHz Maximum Frequency RDS(on) = 0.35 Symbol Test Conditions Maximum Ratings PDC = 940 W TJ = 25C to 150C VDSS 500 V TJ = 25C to 150C; RGS = 1 M VDGR 500 V Continuous VGS 20 V Tr

Otros transistores... DE150-201N09A , DE150-501N04A , DE275-101N30A , DE275-102N06A , DE275-201N25A , DE275-501N16A , DE275X2-102N06A , DE275X2-501N16A , IRF730 , DE375-102N12A , DE375-501N21A , DE475-102N20A , DE475-102N21A , DE475-501N44A , DI9400T , DI9405 , DI9430T .