DI9400T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

DI9400T Datasheet (PDF)

..1. Size:73K diodes
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DI9400 SINGLE P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features High Cell Density DMOS Technology Lower On-State Resistance High Power and Current Capability SO-8 A Fast Switching Speed Dim Min Max High Transient Tolerance 8 7 6 5 A 3.94 4.19 B 3.20 3.40 TOP H B VIEW C 0.381 0.495 D 2.67 3.05 1 2 3 4 E 0.89 1.02 G C G 0.527 0.679 E J 0.41 Nominal J D K

9.1. Size:517K fairchild semi
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June 2014 FDI9406_F085 N-Channel PowerTrench MOSFET 40 V, 110 A, 2.2 m D Features Typ RDS(on) = 1.73m at VGS = 10V, ID = 80A Typ Qg(tot) = 107nC at VGS = 10V, ID = 80A G UIS Capability RoHS Compliant Qualified to AEC Q101 TO-262AB S FDI SERIES Applications Automotive Engine Control For current package drawing, please refer to the Fairchild Powertrai

9.2. Size:31K vishay
di9405.pdf pdf_icon

DI9405 SINGLE P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR POWER SEMICONDUCTOR Features High Cell Density DMOS Technology Low On-State Resistance High Power and Current Capability SO-8 A Fast Switching Speed Dim Min Max High Transient Tolerance 8 7 6 5 A 3.94 4.19 B 3.20 3.40 TOP H B C 0.381 0.495 VIEW D 2.67 3.05 5 D 4 G E 0.89 1.02 1 2 3 4 D

9.3. Size:282K inchange semiconductor
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isc N-Channel MOSFET Transistor FDI9406 FEATURES Drain Current I =80A@ T =25 D C Drain Source Voltage- V =40V(Min) DSS Static Drain-Source On-Resistance R = 2.7m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power su pplies and general purpose

Otros transistores... DE275X2-102N06A , DE275X2-501N16A , DE375-102N10A , DE375-102N12A , DE375-501N21A , DE475-102N20A , DE475-102N21A , DE475-501N44A , IRF830 , DI9405 , DI9430T , DI9435T , DK48N18 , DK48N75 , DK48N78 , DK48N80 , DK48N88 .