DI9400T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

DI9400T Datasheet (PDF)

..1. Size:73K diodes
di9400t.pdf pdf_icon

DI9400SINGLE P-CHANNEL ENHANCEMENT MODEFIELD EFFECT TRANSISTORFeatures High Cell Density DMOS Technology Lower On-State Resistance High Power and Current CapabilitySO-8A Fast Switching SpeedDim Min Max High Transient Tolerance8 7 6 5A 3.94 4.19B 3.20 3.40TOPH BVIEWC 0.381 0.495D 2.67 3.051 2 3 4E 0.89 1.02GC G 0.527 0.679EJ 0.41 NominalJDK

9.1. Size:517K fairchild semi
fdi9406 f085.pdf pdf_icon

June 2014FDI9406_F085N-Channel PowerTrench MOSFET40 V, 110 A, 2.2 m DFeatures Typ RDS(on) = 1.73m at VGS = 10V, ID = 80A Typ Qg(tot) = 107nC at VGS = 10V, ID = 80AG UIS Capability RoHS Compliant Qualified to AEC Q101TO-262ABSFDI SERIESApplications Automotive Engine ControlForcurrentpackagedrawing,pleaserefertotheFairchild Powertrai

9.2. Size:31K vishay
di9405.pdf pdf_icon

DI9405SINGLE P-CHANNEL ENHANCEMENT MODEFIELD EFFECT TRANSISTORPOWER SEMICONDUCTORFeatures High Cell Density DMOS Technology Low On-State Resistance High Power and Current CapabilitySO-8A Fast Switching SpeedDim Min Max High Transient Tolerance8 7 6 5A 3.94 4.19B 3.20 3.40TOPH BC 0.381 0.495VIEWD 2.67 3.055D 4 GE 0.89 1.021 2 3 4D

9.3. Size:282K inchange semiconductor
fdi9406.pdf pdf_icon

isc N-Channel MOSFET Transistor FDI9406FEATURESDrain Current I =80A@ T =25D CDrain Source Voltage-: V =40V(Min)DSSStatic Drain-Source On-Resistance: R = 2.7m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power su pplies and generalpurpose

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .