DI9400T Datasheet. Equivalente

 ..1. Size:73K  diodes
 di9400t.pdf

DI9400 SINGLE P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features High Cell Density DMOS Technology Lower On-State Resistance High Power and Current Capability SO-8 A Fast Switching Speed Dim Min Max High Transient Tolerance 8 7 6 5 A 3.94 4.19 B 3.20 3.40 TOP H B VIEW C 0.381 0.495 D 2.67 3.05 1 2 3 4 E 0.89 1.02 G C G 0.527 0.679 E J 0.41 Nominal J D K

 9.1. Size:517K  fairchild semi
 fdi9406 f085.pdf

June 2014 FDI9406_F085 N-Channel PowerTrench MOSFET 40 V, 110 A, 2.2 m D Features Typ RDS(on) = 1.73m at VGS = 10V, ID = 80A Typ Qg(tot) = 107nC at VGS = 10V, ID = 80A G UIS Capability RoHS Compliant Qualified to AEC Q101 TO-262AB S FDI SERIES Applications Automotive Engine Control For current package drawing, please refer to the Fairchild Powertrai

 9.2. Size:31K  vishay
 di9405.pdf

DI9405 SINGLE P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR POWER SEMICONDUCTOR Features High Cell Density DMOS Technology Low On-State Resistance High Power and Current Capability SO-8 A Fast Switching Speed Dim Min Max High Transient Tolerance 8 7 6 5 A 3.94 4.19 B 3.20 3.40 TOP H B C 0.381 0.495 VIEW D 2.67 3.05 5 D 4 G E 0.89 1.02 1 2 3 4 D

 9.3. Size:282K  inchange semiconductor
 fdi9406.pdf

isc N-Channel MOSFET Transistor FDI9406 FEATURES Drain Current I =80A@ T =25 D C Drain Source Voltage- V =40V(Min) DSS Static Drain-Source On-Resistance R = 2.7m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power su pplies and general purpose