DK48N75 Todos los transistores

 

DK48N75 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DK48N75
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 85 W
   Voltaje máximo drenador - fuente |Vds|: 70 V
   Voltaje máximo fuente - puerta |Vgs|: 25 V
   Corriente continua de drenaje |Id|: 68 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tiempo de subida (tr): 11 nS
   Conductancia de drenaje-sustrato (Cd): 360 pF
   Resistencia entre drenaje y fuente RDS(on): 0.0084 Ohm
   Paquete / Cubierta: TO-220

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DK48N75 Datasheet (PDF)

 ..1. Size:724K  thinkisemi
dk48n75.pdf

DK48N75
DK48N75

DK48N75 PbDK48N75Pb Free Plating Product70V,68A N-Channel Trench Process Power MOSFETGeneral Description The is N-channel MOS Field Effect Transistor DK48N75designed for high current switching applications. Rugged EAS DK48N75(TO-220 HeatSink)capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. Features DS

 8.1. Size:1018K  thinkisemi
dk48n78.pdf

DK48N75
DK48N75

DK48N78 PbDK48N78Pb Free Plating Product70V,80A N-Channel Trench Process Power MOSFETGeneral Description The DK48N78 is N-channel MOS Field Effect Transistor DK48N78designed for high current switching applications. Rugged EAS (TO-220 HeatSink)capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. Features D

 9.1. Size:1176K  thinkisemi
dk48n88.pdf

DK48N75
DK48N75

DK48N88 PbDK48N88Pb Free Plating Product70V,92A N-Channel Trench Process Power MOSFETGeneral Description The DK48N88 is N-channel MOS Field Effect Transistor DK48N88designed for high current switching applications. Rugged EAS (TO-220 HeatSink)capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. Features D

 9.2. Size:1016K  thinkisemi
dk48n80.pdf

DK48N75
DK48N75

DK48N80 PbDK48N80Pb Free Plating Product70V,87A N-Channel Trench Process Power MOSFETGeneral Description The DK48N80 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS DK48N80capability and ultra low RDS(ON) is suitable for PWM, load (TO-220 HeatSink)switching especially for E-Bike controller applications. Features

 9.3. Size:1047K  thinkisemi
dk48n18.pdf

DK48N75
DK48N75

DK48N18 PbDK48N18Pb Free Plating Product70V,158A N-Channel Trench Process Power MOSFETGeneral Description DK48N18The DK48N18 is N-channel MOS Field Effect Transistor (TO-220 HeatSink)designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. DSGFea

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