DK48N80 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DK48N80  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 111 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 70 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V

|Id|ⓘ - Corriente continua de drenaje: 87 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 14 nS

Cossⓘ - Capacitancia de salida: 350 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0058 Ohm

Encapsulados: TO-220

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DK48N80 datasheet

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DK48N75 Pb DK48N75 Pb Free Plating Product 70V,68A N-Channel Trench Process Power MOSFET General Description The is N-channel MOS Field Effect Transistor DK48N75 designed for high current switching applications. Rugged EAS DK48N75 (TO-220 HeatSink) capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. Features DS

MOSTRAR MÁS

Otros transistores... DE475-501N44A, DI9400T, DI9405, DI9430T, DI9435T, DK48N18, DK48N75, DK48N78, RU7088R, DK48N88, DK64N90, DK64N90B, DK64N90F, DKI03038, DKI03062, DKI03082, DKI04035