DKI04035 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: DKI04035
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 61 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 48 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 8.4 nS
   Cossⓘ - Capacitancia de salida: 620 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0043 Ohm
   Paquete / Cubierta: TO-252

Búsqueda de reemplazo de MOSFET DKI04035

DKI04035 Datasheet (PDF)

..1. Size:369K sanken-ele
dki04035.pdf

40 V, 48 A, 3.3 m Low RDS(ON) N ch Trench Power MOSFET DKI04035 Features Package TO-252 V(BR)DSS --------------------------------- 40 V (ID = 100 A) (4) ID ---------------------------------------------------------- 48 A D RDS(ON) ------------ 4.3 m max. (VGS = 10 V, ID = 51 A) Qg ------26.4 nC (VGS = 4.5 V, VDS = 20 V, ID = 58.5 A) Low Total Gate

..2. Size:266K inchange semiconductor
dki04035.pdf

isc N-Channel MOSFET Transistor DKI04035FEATURESDrain Current I =48A@ T =25D CDrain Source Voltage-: V =40V(Min)DSSStatic Drain-Source On-Resistance: R = 4.3m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

8.1. Size:369K sanken-ele
dki04077.pdf

40 V, 47 A, 6.9 m Low RDS(ON) N ch Trench Power MOSFET DKI04077 Features Package TO-252 V(BR)DSS --------------------------------- 40 V (ID = 100 A) (4) ID ---------------------------------------------------------- 47 A D RDS(ON) ---------- 8.9 m max. (VGS = 10 V, ID = 23.3 A) Qg ------- 7.9 nC (VGS = 4.5 V, VDS = 20 V, ID = 29.6 A) Low Total Gat

8.2. Size:369K sanken-ele
dki04046.pdf

40 V, 48 A, 4.3 m Low RDS(ON) N ch Trench Power MOSFET DKI04046 Features Package TO-252 V(BR)DSS --------------------------------- 40 V (ID = 100 A) (4) ID ---------------------------------------------------------- 48 A D RDS(ON) ---------- 5.6 m max. (VGS = 10 V, ID = 35.4 A) Qg ------16.0 nC (VGS = 4.5 V, VDS = 20 V, ID = 42.8 A) Low Total Gate

8.3. Size:266K inchange semiconductor
dki04077.pdf

isc N-Channel MOSFET Transistor DKI04077FEATURESDrain Current I =47A@ T =25D CDrain Source Voltage-: V =40V(Min)DSSStatic Drain-Source On-Resistance: R = 8.9m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

8.4. Size:266K inchange semiconductor
dki04046.pdf

isc N-Channel MOSFET Transistor DKI04046FEATURESDrain Current I =48A@ T =25D CDrain Source Voltage-: V =40V(Min)DSSStatic Drain-Source On-Resistance: R = 5.6m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: DMG1012T

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