DKI06075 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: DKI06075
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 61 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 48 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 7.4 nS
   Cossⓘ - Capacitancia de salida: 420 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.007 Ohm
   Paquete / Cubierta: TO-252

Búsqueda de reemplazo de MOSFET DKI06075

DKI06075 Datasheet (PDF)

..1. Size:369K sanken-ele
dki06075.pdf

60 V, 48 A, 5.3 m Low RDS(ON) N ch Trench Power MOSFET DKI06075 Features Package TO-252 V(BR)DSS --------------------------------- 60 V (ID = 100 A) (4) ID ---------------------------------------------------------- 48 A D RDS(ON) ------------ 7.0 m max. (VGS = 10 V, ID = 34 A) Qg -------- 26.9 nC (VGS = 4.5 V, VDS = 30 V, ID = 39 A) Low Total Gat

..2. Size:266K inchange semiconductor
dki06075.pdf

isc N-Channel MOSFET Transistor DKI06075FEATURESDrain Current I =48A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSStatic Drain-Source On-Resistance: R = 7m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a

9.1. Size:369K sanken-ele
dki06186.pdf

60 V, 31 A, 11.8 m Low RDS(ON) N ch Trench Power MOSFET DKI06186 Features Package TO-252 V(BR)DSS --------------------------------- 60 V (ID = 100 A) (4) ID ---------------------------------------------------------- 31 A D RDS(ON) -------- 16.3 m max. (VGS = 10 V, ID = 15.5 A) Qg ------- 9.1 nC (VGS = 4.5 V, VDS = 30 V, ID = 19.8 A) Low Total Gat

9.2. Size:369K sanken-ele
dki06108.pdf

60 V, 47 A, 7.2 m Low RDS(ON) N ch Trench Power MOSFET DKI06108 Features Package TO-252 V(BR)DSS --------------------------------- 60 V (ID = 100 A) (4) ID ---------------------------------------------------------- 47 A D RDS(ON) ---------- 9.7 m max. (VGS = 10 V, ID = 23.6 A) Qg ------16.9 nC (VGS = 4.5 V, VDS = 30 V, ID = 28.5 A) Low Total Gate

9.3. Size:369K sanken-ele
dki06261.pdf

60 V, 25 A, 16.7 m Low RDS(ON) N ch Trench Power MOSFET DKI06261 Features Package TO-252 V(BR)DSS --------------------------------- 60 V (ID = 100 A) (4) ID ---------------------------------------------------------- 25 A D RDS(ON) -------- 21.9 m max. (VGS = 10 V, ID = 12.5 A) Qg ------- 6.6 nC (VGS = 4.5 V, VDS = 30 V, ID = 15.8 A) Low Total Gat

9.4. Size:265K inchange semiconductor
dki06186.pdf

isc N-Channel MOSFET Transistor DKI06186FEATURESDrain Current I =31A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSStatic Drain-Source On-Resistance: R = 16.3m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

9.5. Size:266K inchange semiconductor
dki06108.pdf

isc N-Channel MOSFET Transistor DKI06108FEATURESDrain Current I =47A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSStatic Drain-Source On-Resistance: R = 9.7m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

9.6. Size:265K inchange semiconductor
dki06261.pdf

isc N-Channel MOSFET Transistor DKI06261FEATURESDrain Current I =25A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSStatic Drain-Source On-Resistance: R = 21.9m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

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