DMC2041UFDB Todos los transistores

 

DMC2041UFDB MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DMC2041UFDB
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.4 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 4.7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 15.9 nS
   Cossⓘ - Capacitancia de salida: 80 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm
   Paquete / Cubierta: U-DFN2020-6
 

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DMC2041UFDB Datasheet (PDF)

 ..1. Size:511K  diodes
 dmc2041ufdb.pdf pdf_icon

DMC2041UFDB

DMC2041UFDB COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID MAX Device V(BR)DSS RDS(ON) max Low Input Capacitance TA = +25C Low Profile, 0.6mm Max Height Q1 40m @ VGS = 4.5V 4.7A 20V ESD protected Gate N-Channel 3.7A 65m @ VGS = 2.5V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 90m

 8.1. Size:463K  panasonic
 dmc204a0.pdf pdf_icon

DMC2041UFDB

This product complies with the RoHS Directive (EU 2002/95/EC).DMC204A0Silicon NPN epitaxial planar typeFor low frequency amplification Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. Mini6-G4-B Eco-friendly Halogen-free package Pin Name 1: Emitter (Tr1) 4: E

 8.2. Size:445K  panasonic
 dmc20401.pdf pdf_icon

DMC2041UFDB

This product complies with the RoHS Directive (EU 2002/95/EC).DMC20401Silicon NPN epitaxial planar typeFor general amplification Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini6-G4-B Contributes to miniaturization of sets, reduction of component count. Pin Nam

 8.3. Size:608K  panasonic
 dmc204b3.pdf pdf_icon

DMC2041UFDB

This product complies with the RoHS Directive (EU 2002/95/EC).DMC204B3Silicon NPN epitaxial planar typeFor general amplification Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini6-G4-B Contributes to miniaturization of sets, reduction of component count. Pin Nam

MOSTRAR MÁS

Otros transistores... DL2M100N5 , DL2M50N5 , DMC1017UPD , DMC1028UFDB , DMC1029UFDB , DMC1030UFDB , DMC1229UFDB , DMC2038LVT , IRFB4227 , DMC2400UV , DMC25D0UVT , DMC25D1UVT , DMC2700UDM , DMC2990UDJ , DMC3016LSD , DMC3025LSD , DMC3028LSDX .

History: QM3001D

 

 
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