DMC2041UFDB MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DMC2041UFDB
Tipo de FET: MOSFET
Polaridad de transistor: NP
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.4 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 4.7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 15.9 nS
Cossⓘ - Capacitancia de salida: 80 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm
Paquete / Cubierta: U-DFN2020-6
Búsqueda de reemplazo de MOSFET DMC2041UFDB
DMC2041UFDB Datasheet (PDF)
dmc2041ufdb.pdf
DMC2041UFDB COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID MAX Device V(BR)DSS RDS(ON) max Low Input Capacitance TA = +25 C Low Profile, 0.6mm Max Height Q1 40m @ VGS = 4.5V 4.7A 20V ESD protected Gate N-Channel 3.7A 65m @ VGS = 2.5V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 90m
dmc204a0.pdf
This product complies with the RoHS Directive (EU 2002/95/EC). DMC204A0 Silicon NPN epitaxial planar type For low frequency amplification Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. Mini6-G4-B Eco-friendly Halogen-free package Pin Name 1 Emitter (Tr1) 4 E
dmc20401.pdf
This product complies with the RoHS Directive (EU 2002/95/EC). DMC20401 Silicon NPN epitaxial planar type For general amplification Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini6-G4-B Contributes to miniaturization of sets, reduction of component count. Pin Nam
dmc204b3.pdf
This product complies with the RoHS Directive (EU 2002/95/EC). DMC204B3 Silicon NPN epitaxial planar type For general amplification Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini6-G4-B Contributes to miniaturization of sets, reduction of component count. Pin Nam
Otros transistores... DL2M100N5 , DL2M50N5 , DMC1017UPD , DMC1028UFDB , DMC1029UFDB , DMC1030UFDB , DMC1229UFDB , DMC2038LVT , 10N60 , DMC2400UV , DMC25D0UVT , DMC25D1UVT , DMC2700UDM , DMC2990UDJ , DMC3016LSD , DMC3025LSD , DMC3028LSDX .
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