DMC25D0UVT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: DMC25D0UVT
   Código: C5D
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 3.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.5 V
   Qgⓘ - Carga de la puerta: 10 nC
   trⓘ - Tiempo de subida: 3.3 nS
   Cossⓘ - Capacitancia de salida: 53 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.08 Ohm
   Paquete / Cubierta: TSOT26

Búsqueda de reemplazo de MOSFET DMC25D0UVT

DMC25D0UVT Datasheet (PDF)

..1. Size:392K diodes
dmc25d0uvt.pdf

DMC25D0UVT COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Low On-Resistance Device V(BR)DSS RDS(ON) TA = +25C Low Input Capacitance Q1 25V 4 @ VGS = 4.5V 0.4 A Fast Switching Speed 80m @ VGS= -12V -3.2 A Low Input/Output Leakage Q2 -30V ESD Protected Gate on N-Channel (>6kV Human Body Model) 125m @ VGS= -

8.1. Size:576K diodes
dmc25d1uvt.pdf

DMC25D1UVT COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID Device V(BR)DSS RDS(ON) TA = +25 Low Input Capacitance C Fast Switching Speed Q1 25V 4 @ VGS = 4.5V 0.5A Low Input/Output Leakage 55m @ VGS= -4.5V -3.9A Q2 -12V ESD Protected Gate 70m @ VGS= -2.5V -3.5A Totally Lead-Free & F

9.1. Size:292K fairchild semi
fdmc2514sdc.pdf

October 2010FDMC2514SDCN-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 40 A, 3.5 mFeatures General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process. Max rDS(on) = 3.5 m at VGS = 10 V, ID = 22.5 AAdvancements in both silicon and Dual CoolTM package Max rDS(on) = 4.7 m

9.2. Size:319K fairchild semi
fdmc2512sdc.pdf

July 2010FDMC2512SDCN-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 40 A, 2.0 mFeatures General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process. Max rDS(on) = 2.0 m at VGS = 10 V, ID = 27 AAdvancements in both silicon and Dual CoolTM package Max rDS(on) = 2.95 m a

9.3. Size:220K fairchild semi
fdmc2523p.pdf

January 2007FDMC2523PtmP-Channel QFET -150V, -3A, 1.5Features General Description Max rDS(on) = 1.5 at VGS = -10V, ID = -1.5AThese P-Channel MOSFET enhancement mode power field effect transistors are produced using Fairchild's proprietary, Low Crss ( typical 10pF)planar stripe, DMOS technology. This advanced technology has Fast Switchingbeen especially tailored t

9.4. Size:333K onsemi
fdmc2514sdc.pdf

FDMC2514SDCN-Channel Dual CoolTM 33 PowerTrench SyncFETTM25 V, 40 A, 3.5 mGeneral DescriptionThis N-Channel MOSFET is produced using ONSemiconductors advanced PowerTrench process.FeaturesAdvancements in both silicon and Dual CoolTM package Dual CoolTM Top Side Cooling PQFN package technologies have been combined to offer the lowest rDS(on) while maintaining excellent

9.5. Size:857K cn vbsemi
fdmc2514sdc.pdf

FDMC2514SDCwww.VBsemi.twN-Channel 30 V (D-S) MOSFETFEATURES Halogen-free According to IEC 61249-2-21PRODUCT SUMMARY DefinitionVDS (V) RDS(on) () Typ. Qg (Typ.)ID (A) TrenchFET Power MOSFET0.004 at VGS = 4.5 V 50 100 % Rg and UIS Tested30 33.5 nC0.005 at VGS = 2.5 V 45 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Motor Control

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

Liste

Recientemente añadidas las descripciónes de los transistores: