DMC25D0UVT Datasheet. Equivalente

 ..1. Size:392K  diodes
 dmc25d0uvt.pdf

DMC25D0UVT COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Low On-Resistance Device V(BR)DSS RDS(ON) TA = +25 C Low Input Capacitance Q1 25V 4 @ VGS = 4.5V 0.4 A Fast Switching Speed 80m @ VGS= -12V -3.2 A Low Input/Output Leakage Q2 -30V ESD Protected Gate on N-Channel (>6kV Human Body Model) 125m @ VGS= -

 8.1. Size:576K  diodes
 dmc25d1uvt.pdf

DMC25D1UVT COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID Device V(BR)DSS RDS(ON) TA = +25 Low Input Capacitance C Fast Switching Speed Q1 25V 4 @ VGS = 4.5V 0.5A Low Input/Output Leakage 55m @ VGS= -4.5V -3.9A Q2 -12V ESD Protected Gate 70m @ VGS= -2.5V -3.5A Totally Lead-Free & F

 9.1. Size:292K  fairchild semi
 fdmc2514sdc.pdf

October 2010 FDMC2514SDC N-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 40 A, 3.5 m Features General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process. Max rDS(on) = 3.5 m at VGS = 10 V, ID = 22.5 A Advancements in both silicon and Dual CoolTM package Max rDS(on) = 4.7 m

 9.2. Size:319K  fairchild semi
 fdmc2512sdc.pdf

July 2010 FDMC2512SDC N-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 40 A, 2.0 m Features General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process. Max rDS(on) = 2.0 m at VGS = 10 V, ID = 27 A Advancements in both silicon and Dual CoolTM package Max rDS(on) = 2.95 m a

 9.3. Size:220K  fairchild semi
 fdmc2523p.pdf

January 2007 FDMC2523P tm P-Channel QFET -150V, -3A, 1.5 Features General Description Max rDS(on) = 1.5 at VGS = -10V, ID = -1.5A These P-Channel MOSFET enhancement mode power field effect transistors are produced using Fairchild's proprietary, Low Crss ( typical 10pF) planar stripe, DMOS technology. This advanced technology has Fast Switching been especially tailored t

 9.4. Size:333K  onsemi
 fdmc2514sdc.pdf

FDMC2514SDC N-Channel Dual CoolTM 33 PowerTrench SyncFETTM 25 V, 40 A, 3.5 m General Description This N-Channel MOSFET is produced using ON Semiconductor s advanced PowerTrench process. Features Advancements in both silicon and Dual CoolTM package Dual CoolTM Top Side Cooling PQFN package technologies have been combined to offer the lowest rDS(on) while maintaining excellent

 9.5. Size:857K  cn vbsemi
 fdmc2514sdc.pdf

FDMC2514SDC www.VBsemi.tw N-Channel 30 V (D-S) MOSFET FEATURES Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY Definition VDS (V) RDS(on) ( ) Typ. Qg (Typ.) ID (A) TrenchFET Power MOSFET 0.004 at VGS = 4.5 V 50 100 % Rg and UIS Tested 30 33.5 nC 0.005 at VGS = 2.5 V 45 Compliant to RoHS Directive 2002/95/EC APPLICATIONS Motor Control