DMG2305UX Todos los transistores

 

DMG2305UX MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DMG2305UX
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.4 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 4.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 13.7 nS
   Cossⓘ - Capacitancia de salida: 85 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.052 Ohm
   Paquete / Cubierta: SOT-23
     - Selección de transistores por parámetros

 

DMG2305UX Datasheet (PDF)

 ..1. Size:364K  diodes
dmg2305ux.pdf pdf_icon

DMG2305UX

DMG2305UX P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low On-Resistance V(BR)DSS RDS(ON) max Package TA = +25C Low Input Capacitance 52m @VGS = -4.5V -5.0A Fast Switching Speed -20V SOT23 -3.6A 100m @VGS = -2.5V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3)

 0.1. Size:425K  diodes
dmg2305uxq.pdf pdf_icon

DMG2305UX

DMG2305UXQ P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low On-Resistance BVDSS RDS(ON) Max Package TA = +25C Low Input Capacitance 52m @VGS = -4.5V -5.0A Fast Switching Speed -20V SOT23 -3.6A 100m @VGS = -2.5V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3)

 8.1. Size:419K  diodes
dmg2302uq.pdf pdf_icon

DMG2305UX

DMG2302UQ N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID max BVDSS RDS(ON) max TA = +25C Low Input Capacitance Fast Switching Speed 90m @ VGS = 4.5V 4.2A Low Input/Output Leakage 20V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 120m @ VGS = 2.5V 2.7A Halogen and Antimony Free. Green Device

 8.2. Size:507K  diodes
dmg2301lk.pdf pdf_icon

DMG2305UX

DMG2301LK P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID Max Low Input Capacitance BVDSS RDS(ON) Max TA = +25C Fast Switching Speed ESD Protected Gate 160m @ VGS = -4.5V -2.4A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) -20V Halogen and Antimony Free. Green Device (Note 3) 210

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History: SSF6010A | IPS80R900P7 | STF34N65M5 | SSPL1090 | AP2317GN-HF | IRC840PBF | PV563BA

 

 
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