DMN1019USN MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

DMN1019USN12V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low On-ResistanceV(BR)DSS RDS(ON) MAX TA = +25C ESD Protected Gate10m @ VGS = 4.5V 9.3A Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) 12m @ VGS = 2.5V 8.5A Halogen and Antimony Free. Green Device (Note 3)12V 14m @ VGS = 1.8V 7.9A Qualified to AEC-Q1

DMN1019UVT 12V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low On-Resistance V(BR)DSS RDS(ON) MAX TA = +25C ESD Protected Gate 10m @ VGS = 4.5V 10.7A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 12m @ VGS = 2.5V 9.8A Halogen and Antimony Free. Green Device (Note 3) 12V 14m @ VGS = 1.8V 9.1A 18m @ VGS = 1.5V

DMN1019UFDE12V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 0.6mm profile ideal for low profile applications ID max V(BR)DSS RDS(ON) max PackageTA = +25C PCB footprint of 4mm2 Low Gate Threshold Voltage 10m @ VGS = 4.5V 11A 12m @ VGS = 2.5V 10 Fast Switching Speed U-DFN2020-6 12V 14m @ VGS = 1.8V 9A ESD Protected GateT

DMN100N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Extremely Low On-Resistance: 170m @ VGS = 4.5V Case: SC-59 Case Material: Molded Plastic, "Green" Molding Compound. High Drain Current: 1.1A UL Flammability Classification Rating 94V-0 Ideal for Notebook Computer, Portable Phone, PCMCIA Moisture Sensitivity: Level 1 per J-

DMN10H099SFG100V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Low RDS(ON) ensures on state losses are minimized ID max V(BR)DSS RDS(ON) max Small form factor thermally efficient package enables higher TA = +25C density end products 80m @ VGS = 10V 4.2A Occupies just 33% of the board area occupied by SO-8 enabling

DMN1029UFDB N-CHANNEAL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID MAX V(BR)DSS RDS(ON) Max Low Input Capacitance TA = +25C Low Profile, 0.6mm Max Height 29m @ VGS = 4.5V 5.6A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 34m @ VGS = 2.5V 5.1A Halogen and Antimony Free. Green Device (Note 3) 12V 4

DMN10H120SE100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID max Low On-ResistanceV(BR)DSS RDS(ON) max TA = +25C Low Input Capacitance 110m @ VGS = 10V 3.6A Fast Switching Speed 100V 122m @ VGS = 6.0V 3.4A Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free

DMN1045UFR4 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID V(BR)DSS RDS(ON) Low Input/Output Leakage TA = +25C Fast Switching Speed ESD Protected Gate 45m @ VGS = 4.5V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) 64m @ VGS = 2

DMN1025UFDBDUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-ResistanceID MAX Device V(BR)DSS RDS(ON) max Low Input Capacitance TA = +25C Low Profile, 0.6mm Max Height 25m @ VGS = 4.5V 6.9A ESD protected gate. N-Channel 12V 30m @ VGS = 2.5V 6.3A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 38m @ VGS = 1.8V 5

DMN10H100SK3 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low RDS(ON) ensures on state losses are minimized ID BVDSS RDS(ON) max Small form factor thermally efficient package enables higher TC = +25C 80m @ VGS = 10V 18A density end products 100V 16A 100m @ VGS = 4.5V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) H

DMN10H170SFDE 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 0.6mm Profile Ideal for Low Profile Applications ID max PCB Footprint of 4mm2 V(BR)DSS RDS(ON) max TA = +25C Low On-Resistance Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 160m @ VGS = 10V 2.9A 100V Halogen and Antimony Free. Green Device

DMN1033UCB4N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary Features and Benefits IS Built-in G-S protection diode against ESD 2kV HBM. VSSS RSS(ON) TA = +25C Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 12V 26m @ VGS = 4.5V 5.5 A Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability

DMN1003UCA6 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features CSP with Footprint 3.54mm 1.77mm IS Height = 0.21mm for Low Profile BVSSS RSS(ON) Max TA = +25C ESD Protection of Gate 3.2m @ VGS = 4.5V 23.6A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 12V 6.3m @ VGS = 2.5V 16.8A Halogen and Antimony Free. Green De

DMN10H170SFGN-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID max 100% Unclamped Inductive Switch (UIS) test in production V(BR)DSS RDS(ON) max TA = +25C Low RDS(ON) ensures on state losses are minimized 122m @ VGS = 10V 2.9A Small form factor thermally efficient package enables higher 100V 133m @ VGS = 4.5V 2.7A density end

DMN10H170SK3 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID V(BR)DSS RDS(on) max Low Input Capacitance TC = +25C 140m @ VGS = 10V 12A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 100V 11A 160m @ VGS = 4.5V Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards

DMN10H220L 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID Low Input Capacitance V(BR)DSS RDS(on) max TA = +25C Fast Switching Speed Low Input/Output Leakage 220m @ VGS = 10V 1.6A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 100V 1.3A 250m @ VGS = 4.5V Halogen and Antimony Fre

DMN1002UCA6 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features CSP with Footprint 3.05mm 1.77mm IS BVSSS RSS(ON) Max Height = 0.11mm for Low Profile TA = +25C ESD Protection of Gate 2.75m @ VGS = 4.5V 24.4A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 12V 6.1m @ VGS = 2.5V 16.4A Halogen and Antimony Free. Green D

DMN10H120SFG 100V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Low RDS(ON) ensures on state losses are minimized ID max V(BR)DSS RDS(ON) max Small form factor thermally efficient package enables higher TA = +25C density end products 110m @ VGS = 10V 3.8 A Occupies just 33% of the board area occupied by SO-8 enabling

DMN10H220LVT 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Input Capacitance ID V(BR)DSS RDS(on) max Low On-Resistance TA = +25C Fast Switching Speed 220m @ VGS = 10V 2.24A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 100V Halogen and Antimony Free. Green Device (Note 3) 2.10A 250m @ VGS =

DMN10H220LE 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Low On-Resistance V(BR)DSS RDS(on) max TA = +25C Low Input Capacitance 2.3A 220m @ VGS = 10V Fast Switching Speed 100V 250m @ VGS = 4.5V 2.1A Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Description Halogen a

DMN10H170SVT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID max Low Gate Threshold Voltage V(BR)DSS RDS(ON) max TA = +25C Low Input Capacitance 160m @ VGS = 10V 2.6A Fast Switching Speed 100V 200m @ VGS = 4.5V 2.3A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (

DMN1006UCA6 6 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features IS CSP with Footprint 2.70mm 1.81mm BVSSS RSS(ON) MAX TA = +25C Height = 0.21mm for Low Profile ESD Protection of Gate 5.9m @ VGS = 4.5V 16.6A 12V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 9.0m @ VGS = 2.5V 12.1A Halogen and Antimony Free. Green De

DMN10H099SK3Green 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low RDS(ON) ensures on state losses are minimized IDV(BR)DSS RDS(on) max Small form factor thermally efficient package enables higher TC = +25C 80m @ VGS = 10V 17A density end products 100V 99m @ VGS = 6V 15A Lead-Free Finish; RoHS compliant (Note 1 & 2) Haloge

DMN1032UCB4N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features LD-MOS technology with the lowest Figure of Merit: VDSS RDS(on) Qg Qgd ID RDS(on) = 18m to minimize on-state losses 12V 18m 3.2nC 0.3nC 4.8A Qg = 3.2nC for ultra-fast switching Vgs(th) = 0.8V typ. for a low turn-on potential Typ. @ VGS = 4.5V, TA = +25C CSP with Footprint 1.0mm 1.0mm

Product specificationDMN100N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Extremely Low On-Resistance: 170m @ VGS = 4.5V Case: SC59 Case Material: Molded Plastic, "Green" Molding Compound. High Drain Current: 1.1A UL Flammability Classification Rating 94V-0 Ideal for Notebook Computer, Portable Phone, PCMCIA Moisture Sensitivity: Level 1 pe

isc N-Channel MOSFET Transistor DMN10H100SK3FEATURESDrain Current I = 18A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 80m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp

isc N-Channel MOSFET Transistor DMN10H099SK3FEATURESDrain Current I = 17A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 80m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp